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JAN1N5521DUR-1/TR

产品描述稳压二极管
产品类别半导体    分立半导体    二极管与整流器    稳压二极管   
文件大小217KB,共7页
制造商Microsemi
官网地址https://www.microsemi.com
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JAN1N5521DUR-1/TR概述

稳压二极管

JAN1N5521DUR-1/TR规格参数

参数名称属性值
厂商名称Microsemi
产品种类稳压二极管
RoHSN
Vz - 齐纳电压4.3 V
安装风格SMD/SMT
封装 / 箱体DO-213AA-2
Pd-功率耗散500 mW
电压容差1 %
齐纳电流88 mA
Zz - 齐纳阻抗18 Ohms
最小工作温度- 65 C
最大工作温度+ 175 C
配置Single
测试电流20 mA
直径1.7 mm
长度3.71 mm
If - 正向电流200 mA
Ir - 反向电流 3 uA
工厂包装数量1
Vf - 正向电压1.1 V

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1N5518BUR-1 thru 1N5546BUR-1
Low Voltage Avalanche
500 mW Zener Diodes
Qualified per MIL-PRF-19500/437
DESCRIPTION
The 1N5518BUR-1 thru 1N5546BUR-1 series of 0.5 watt glass surface mount Zener voltage
regulators provides a selection from 3.3 to 33 volts with tolerances ranging from plus/minus
1% to 20%. The standard tolerance is plus/minus 5% with the B suffix unless ordered
otherwise. These glass surface mount devices are available with an internal metallurgical
bond option. This type of bonded Zener package construction is also in JAN, JANTX, and
JANTXV military qualifications. Microsemi also offers numerous other Zener products to meet
higher and lower power applications.
Available on
commercial
versions
Qualified Levels:
JAN, JANTX and
JANTXV
DO-213AA MELF
Package
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
JEDEC registered 1N5518 thru 1N5546.
Voltage tolerances of plus/minus 20%, 10%, 5%, 2%, and 1% available. See
Note 1
on page 3.
Internal metallurgical bond.
JAN, JANTX, and JANTXV qualification per MIL-PRF-19500/437 available.
RoHS compliant versions available (commercial grade only).
Also available in:
DO-35
(DO-204AH)
(axial-leaded)
1N5518B-1 thru 1N5546B-1
APPLICATIONS / BENEFITS
Regulates voltage over a broad operating current and temperature range.
Extensive selection from 3.3 to 33 V.
Hermetically sealed surface mount package.
Nonsensitive to ESD per MIL-STD-750 Method 1020.
Minimal capacitance (see
Figure 3).
Inherently radiation hard as described in Microsemi’s “MicroNote
050”
which is available at
Microsemi.com.
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
(Note 1)
Steady-State Power
(Also see derating in
Figure 2)
Symbol
T
J
and T
STG
P
D
(Note 2)
Value
-65 to +175
0.5
100
300
35
1.1
260
Unit
o
C
W
Thermal Resistance Junction-to-End Cap
(Note 2)
Thermal Resistance Junction-to-Ambient
Thermal Impedance
Forward Voltage 200mA
Solder Pad Temperature @ 10 s
R
ӨJEC
R
ӨJA
Z
ӨJX
V
F
T
SP
o
o
C/W
C/W
o
C/W
V
o
C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Notes:
1. At end cap temperature T
EC
< 125
o
C or at ambient T
A
< 50
º
C when mounted on FR4 PC board as
described for thermal resistance above (see
Figure 2
for derating). Derate to 0 at +175
o
C.
2. When mounted on FR4 PC board (1 oz Cu) with recommended footprint (see last page).
T4-LDS-0037, Rev 2 (111456)
©2011 Microsemi Corporation
Page 1 of 6

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