NXP Semiconductors
Technical Data
Document Number: A3G22H400--04S
Rev. 0, 05/2018
RF Power GaN Transistor
This 79 W asymmetrical Doherty RF power GaN transistor is designed for
cellular base station applications requiring wide instantaneous bandwidth
capability covering the frequency range of 1800 to 2200 MHz.
This part is characterized and performance is guaranteed for applications
operating in the 1800 to 2200 MHz band. There is no guarantee of performance
when this part is used in applications designed outside of these frequencies.
2100 MHz
Typical Doherty Single--Carrier W--CDMA Characterization Performance:
V
DD
= 48 Vdc, I
DQA
= 200 mA, V
GSB
=
–
5.4 Vdc, P
out
= 79 W Avg., Input
Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
(1)
Frequency
2110 MHz
2140 MHz
2170 MHz
2200 MHz
G
ps
(dB)
15.4
15.4
15.4
15.3
D
(%)
56.6
56.6
56.6
56.5
Output PAR
(dB)
7.1
7.1
7.1
7.0
ACPR
(dBc)
–33.1
–34.9
–34.9
–34.5
Carrier
RF
inA
/V
GSA
3
1 RF
outA
/V
DSA
NI-
-780S-
-4L
A3G22H400-
-04SR3
1800–2200 MHz, 79 W AVG., 48 V
AIRFAST RF POWER GaN
TRANSISTOR
1800 MHz
Typical Doherty Single--Carrier W--CDMA Performance: V
DD
= 48 Vdc,
I
DQA
= 200 mA, V
GSB
=
–
5.5 Vdc, P
out
= 89 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
(1)
Frequency
1805 MHz
1840 MHz
1880 MHz
G
ps
(dB)
15.1
15.6
15.1
D
(%)
56.0
56.5
58.7
Output PAR
(dB)
7.0
7.1
7.0
ACPR
(dBc)
–31.1
–31.8
–30.8
RF
inB
/V
GSB
4
Peaking
(Top View)
2 RF
outB
/V
DSB
Figure 1. Pin Connections
1. All data measured in fixture with device soldered to heatsink.
Features
High terminal impedances for optimal broadband performance
Advanced high performance in--package Doherty
Able to withstand extremely high output VSWR and broadband operating
conditions
2018 NXP B.V.
2016
A3G22H400-
-04SR3
1
RF Device Data
NXP Semiconductors
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Maximum Forward Gate Current @ T
C
= 25C
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
Absolute Maximum Junction Temperature
(1)
Symbol
V
DSS
V
GS
V
DD
I
GMAX
T
stg
T
C
T
J
T
MAX
Symbol
R
JC
(IR)
R
JC
(FEA)
Value
125
–8, 0
0 to +55
49
– 65 to +150
– 55 to +150
– 55 to +225
275
Unit
Vdc
Vdc
Vdc
mA
C
C
C
C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance by Infrared Measurement, Active Die Surface--to--Case
Case Temperature 77C, P
D
= 64.8 W
Thermal Resistance by Finite Element Analysis, Junction--to--Case
Case Temperature 77C, P
D
= 64.8 W
Value
0.87
(2)
1.51
(3)
Unit
C/W
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JS--001--2017)
Charge Device Model (per JS--002--2014)
Class
2
C3
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
(4)
Drain--Source Breakdown Voltage
(V
GS
= –8 Vdc, I
D
= 18.9 mAdc)
(V
GS
= –8 Vdc, I
D
= 29.7 mAdc)
On Characteristics - Side A, Carrier
-
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 18.9 mAdc)
Gate Quiescent Voltage
(V
DD
= 48 Vdc, I
DA
= 200 mAdc, Measured in Functional Test)
Gate--Source Leakage Current
(V
DS
= 0 Vdc, V
GS
= –5 Vdc)
On Characteristics - Side B, Peaking
-
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 17 mAdc)
Gate--Source Leakage Current
(V
DS
= 0 Vdc, V
GS
= –5 Vdc)
V
GS(th)
I
GSS
–3.8
–9.2
–3.1
—
–2.3
—
Vdc
mAdc
V
GS(th)
V
GSA(Q)
I
GSS
–3.8
—
–5.85
–3.0
–3.0
—
–2.3
—
—
Vdc
Vdc
mAdc
Carrier
Peaking
V
(BR)DSS
—
150
150
—
Vdc
Symbol
Min
Typ
Max
Unit
1. Functional operation above 225C has not been characterized and is not implied. Operation at T
MAX
(275C) reduces median time to failure
by an order of magnitude; operation beyond T
MAX
could cause permanent damage.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to
http://www.nxp.com/RF
and search for AN1955.
3. R
JC
(FEA) must be used for purposes related to reliability and limitations on maximum junction temperature. MTTF may be estimated by
the expression MTTF (hours) = 10
[A + B/(T + 273)]
, where
T
is the junction temperature in degrees Celsius,
A
= –10.3 and
B
= 8260.
4. Each side of device measured separately.
(continued)
A3G22H400-
-04SR3
2
RF Device Data
NXP Semiconductors
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(1,2)
(In NXP Doherty Production Test Fixture, 50 ohm system) V
DD
= 48 Vdc, I
DQA
= 200 mA, V
GSB
= –5.4 Vdc,
P
out
= 79 W Avg., f = 2110 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @
5
MHz Offset.
[See note on correct biasing sequence.]
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
G
ps
D
PAR
ACPR
14.3
52.0
6.5
—
15.0
55.8
7.2
–30.9
17.3
—
—
–27.7
dB
%
dB
dBc
Load Mismatch
(In NXP Production Test Fixture, 50 ohm system) I
DQA
= 200 mA, V
GSB
= –5.4 Vdc, f = 2140 MHz, 12 sec(on), 10% Duty
Cycle
VSWR 10:1 at 55 Vdc, 417 W Pulsed CW Output Power
(3 dB Input Overdrive from 340 W Pulsed CW Rated Power)
No Device Degradation
Typical Performance
(2,3)
(In NXP Doherty Characterization Test Fixture, 50 ohm system) V
DD
= 48 Vdc, I
DQA
= 200 mA, V
GSB
= –5.4 Vdc,
2110–2200 MHz Bandwidth
P
out
@ 3 dB Compression Point
(4)
AM/PM
(Maximum value measured at the P3dB compression point across
the 2110–2200 MHz bandwidth)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 90 MHz Bandwidth @ P
out
= 79 W Avg.
Gain Variation over Temperature
(–30C to +85C)
Output Power Variation over Temperature
(–30C to +85C)
P3dB
—
—
400
–15
—
—
W
VBW
res
G
F
G
P1dB
—
—
—
—
200
0.05
0.015
0.004
—
—
—
—
MHz
dB
dB/C
dB/C
Table 5. Ordering Information
Device
A3G22H400--04SR3
1.
2.
3.
4.
Tape and Reel Information
R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel
NI--780S--4L
Package
Part internally matched both on input and output.
Measurements made with device in an asymmetrical Doherty configuration.
All data measured in fixture with device soldered to heatsink.
P3dB = P
avg
+ 7.0 dB where P
avg
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
NOTE: Correct Biasing Sequence for GaN Depletion Mode Transistors
Turning the device ON
1. Set V
GS
to –5 V
2. Turn on V
DS
to nominal supply voltage (48 V)
3. Increase V
GS
until I
DS
current is attained
4. Apply RF input power to desired level
Turning the device OFF
1. Turn RF power off
2. Reduce V
GS
down to –5 V
3. Reduce V
DS
down to 0 V (Adequate time must be allowed
for V
DS
to reduce to 0 V to prevent severe damage to device.)
4. Turn off V
GS
A3G22H400-
-04SR3
RF Device Data
NXP Semiconductors
3
A3G22H400-04S
Rev. 5
C12
VDDA
VGGA
C5
C6
C1*
C11*
R1
C18*
C24*
C23*
C20*
Z1
C3*
C9*
C10*
C14
C15
C
C2*
R3
P
cut out
area
C22
C21*
C25*
R2
C8 C4*
C19*
C16
C7
VGGB
C17
VDDB
C13
*C1, C2, C3, C4, C9, C10, C11, C18, C19, C20, C21, C23, C24, and C25 are mounted vertically.
aaa-
-030284
Figure 2. A3G22H400-
-04SR3 Production Test Circuit Component Layout
Table 6. A3G22H400-
-04SR3 Production Test Circuit Component Designations and Values
Part
C1, C2, C3, C4, C18, C19
C5, C6, C7, C8
C9, C10
C11
C12, C13
C14, C15, C16, C17
C20
C21
C22
C23, C24, C25
R1, R2
R3
Z1
PCB
10
F
Chip Capacitor
0.2 pF Chip Capacitor
0.7 pF Chip Capacitor
470
F,
100 V Electrolytic Capacitor
10
F
Chip Capacitor
3 pF Chip Capacitor
15 pF Chip Capacitor
1.0 pF Chip Capacitor
0.5 pF Chip Capacitor
3.3
,
1/8 W Chip Resistor
50
,
10 W Termination Chip Resistor
1800–2200 MHz Band, 90, 2 dB Directional Coupler
Rogers RO4350B, 0.020,
r
= 3.66
Description
8.2 pF Chip Capacitor
Part Number
ATC100B8R2CT500XT
C3225X7S1H106M250AB
ATC100B0R2BT500XT
ATC100B0R7BT500XT
MCGPR100V477M16X32
C5750X7S2A106M230KB
ATC100B3R0CT500XT
ATC100B150JT500XT
GQM2195C2E1R0BB12D
ATC100B0R5BT500XT
CRCW08053R30FKEA
060120A25X50-2
X3C20F1-02S
—
Manufacturer
ATC
TDK
ATC
ATC
Multicomp
TDK
ATC
ATC
Murata
ATC
Vishay
Anaren
Anaren
MTL
A3G22H400-
-04SR3
4
RF Device Data
NXP Semiconductors
V
GGA
C6
C1*
C13
C12
C5
C16*
V
DDA
C23
C11*
R3
Z1
C9*
C2*
C10*
C4*
R1
C21*
C22*
C19*
Q1
C20
C17*
C
A3G22H400
Rev. 7
P
R2
C14
C7
C8
C3*
C15
C24
V
GGB
D105083
C18*
V
DDB
*C1, C2, C3, C4, C9, C10, C11, C16, C17, C18, C19, C21, and C22 are mounted vertically.
Note: All data measured in fixture with device soldered to heatsink.
aaa-
-030312
Figure 3. A3G22H400-
-04SR3 Characterization Test Circuit Component Layout — 2110–2200 MHz
Table 7. A3G22H400-
-04SR3 Characterization Test Circuit Component Designations and Values — 2110–2200 MHz
Part
C1, C2, C3, C16, C17, C18
C4
C5, C6, C7, C8
C9
C10, C11
C12, C13, C14, C15
C19
C20
C21, C22
C23, C24
Q1
R1, R2
R3
Z1
PCB
12 pF Chip Capacitor
10
F
Chip Capacitor
0.3 pF Chip Capacitor
0.8 pF Chip Capacitor
10
F
Chip Capacitor
3.6 pF Chip Capacitor
0.9 pF Chip Capacitor
0.6 pF Chip Capacitor
470
F,
100 V Electrolytic Capacitor
RF Power LDMOS Transistor
3.3
,
1/8 W Chip Resistor
50
,
10 W Termination Chip Resistor
1800–2200 MHz Band, 90, 2 dB Directional Coupler
Rogers RO4350B, 0.020,
r
= 3.66
Description
8.2 pF Chip Capacitor
Part Number
ATC100B8R2CT500XT
ATC100B120JT500XT
C3225X7S1H106M250AB
ATC100B0R3BT500XT
ATC100B0R8BT500XT
C5750X7S2A106M230KB
ATC100B3R6CT500XT
GQM2195C2ER90BB12D
ATC100B0R6CT500XT
MCGPR100V477M16X32
A3G22H400-04S
CRCW08053R30FKEA
060120A25X50-2
X3C20F1-02S
D105083
Manufacturer
ATC
ATC
TDK
ATC
ATC
TDK
ATC
Murata
ATC
Multicomp
NXP
Vishay
Anaren
Anaren
MTL
A3G22H400-
-04SR3
RF Device Data
NXP Semiconductors
5
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