2N3019
Qualified Levels:
JAN, JANTX,
JANTXV, and JANS
Compliant
LOW POWER NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/391
DESCRIPTION
This 2N3019 NPN leaded silicon transistor device is military qualified for high-reliability
applications. Microsemi also offers numerous other transistor products to meet higher and
lower power ratings with various switching speed requirements in both through-hole and
surface-mount packages.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
•
JEDEC registered 2N3019 number.
JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/391.
Rad hard levels are also available per MIL-PRF-19500/391.
(For RHA datasheet see
JANSD2N3019.)
RoHS compliant by design.
TO-5 Package
Also available in:
TO-39 (TO-205AD)
(short-leaded)
2N3019S
APPLICATIONS / BENEFITS
•
•
•
•
Long leaded TO-5 package.
Lightweight.
Low power.
Military and other high-reliability applications.
TO-46 (TO-206AB)
(leaded)
2N3057A
TO-18 (TO-206AA)
(leaded)
2N3700
UB package
(leaded)
2N3700UB
MAXIMUM RATINGS
@ T
A
= +25 C unless otherwise noted
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Case
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
o
(1)
Total Power Dissipation:
@ T
A
= +25 C
o
(2)
@ T
C
= +25 C
Notes:
1. Derate linearly 4.6 mW/°C for T
A
≥
+25 °C.
2. Derate linearly 28.6 mW/°C for T
C
≥ +25 °C.
o
Symbol
T
J
and T
STG
R
ӨJA
R
ӨJC
V
CEO
V
CBO
V
EBO
I
C
P
D
Value
-65 to +200
195
30
80
140
7.0
1.0
0.8
5.0
Unit
o
C
o
C/W
o
C/W
V
V
V
A
W
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0185, Rev. 2 (121562)
©2012 Microsemi Corporation
Page 1 of 6
2N3019
MECHANICAL and PACKAGING
•
•
•
•
•
•
CASE: Hermetically sealed, kovar base, nickel cap.
TERMINALS: Gold plate, solder dip (Sn63/Pb37) available upon request. NOTE: Solder dip will eliminate RoHS compliance.
MARKING: Part number, date code, manufacturer’s ID and serial number.
POLARITY: NPN.
WEIGHT: Approximately 1.064 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN level
JANTX = JANTX level
JANTXV = JANTXV level
JANS = JANS level
Blank = Commercial
2N3019
JEDEC type number
(see
Electrical Characteristics
table)
Symbol
f
I
B
I
E
T
A
T
C
V
CB
V
CE
V
EB
SYMBOLS & DEFINITIONS
Definition
Frequency
Base current (dc)
Emitter current (dc)
Ambient temperature
Case temperature
Collector to base voltage (dc)
Collector to emitter voltage (dc)
Emitter to base voltage (dc)
T4-LDS-0185, Rev. 2 (121562)
©2012 Microsemi Corporation
Page 2 of 6
2N3019
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted
Parameters / Test Conditions
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I
C
= 30 mA
Collector-Base Cutoff Current
V
CB
= 140 V
Emitter-Base Cutoff Current
V
EB
= 7 V
Collector-Emitter Cutoff Current
V
CE
= 90 V
Emitter-Base Cutoff Current
V
EB
= 5.0 V
ON CHARACTERISTICS
Forward-Current Transfer Ratio
I
C
= 150 mA, V
CE
= 10 V
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 500 mA, V
CE
= 10 V
I
C
= 1.0 A, V
CE
= 10 V
Collector-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
Base-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA
Symbol
Min.
Max.
Unit
V
(BR)CEO
I
CBO
I
EBO1
I
CES
I
EBO2
80
10
10
10
10
V
µA
µA
ηA
ηA
h
FE
100
50
90
50
15
300
300
300
V
CE(sat)
V
BE(sat)
0.2
0.5
1.1
V
V
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 1.0 mA, V
CE
= 5.0 V, f = 1.0 kHz
Magnitude of Small-Signal Short-Circuit Forward Current
Transfer Ratio
I
C
= 50 mA, V
CE
= 10 V, f = 20 MHz
Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz ≤ f ≤ 1.0 MHz
Input Capacitance
V
EB
= 0.5 V, I
C
= 0, 100 kHz ≤ f ≤ 1.0 MHz
Symbol
h
fe
Min.
80
Max.
400
Unit
|h
fe
|
C
obo
C
ibo
5.0
20
12
60
pF
pF
T4-LDS-0185, Rev. 2 (121562)
©2012 Microsemi Corporation
Page 3 of 6
2N3019
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted (continued)
SAFE OPERATION AREA
(See SOA graph below and
MIL-STD-750, method 3053)
DC Tests
T
C
= 25 °C, 1 cycle, t = 10 ms
Test 1
V
CE
= 10 V
I
C
= 500 mA
V
CE
= 40 V
I
C
= 125 mA
V
CE
= 80 V
I
C
= 60 mA
Test 2
Test 3
(1) Pulse Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%.
I
C
– COLLECTOR CURRENT -
µA
V
CE
– COLLECTOR – EMITTER VOLTAGE – V
Maximum Safe Operating Area
T4-LDS-0185, Rev. 2 (121562)
©2012 Microsemi Corporation
Page 4 of 6
2N3019
GRAPHS
Maximum DC Operation Rating (W)
T
A
( C) Ambient
FIGURE 1
Temperature – Power Derating (R
ӨJA
)
o
Maximum DC Operation Rating (W)
T
C
( C) Case at base
FIGURE 2
Temperature – Power Derating (R
ӨJC
)
o
T4-LDS-0185, Rev. 2 (121562)
©2012 Microsemi Corporation
Page 5 of 6
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