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JANS1N5616US/TR

产品描述整流器
产品类别半导体    分立半导体    二极管与整流器    整流器   
文件大小126KB,共4页
制造商Microsemi
官网地址https://www.microsemi.com
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JANS1N5616US/TR概述

整流器

JANS1N5616US/TR规格参数

参数名称属性值
厂商名称Microsemi
产品种类整流器
RoHSN
安装风格SMD/SMT
封装 / 箱体D-5A-2
Vr - 反向电压 400 V
If - 正向电流1 A
类型Standard Recovery Rectifiers
配置Single
Vf - 正向电压1.3 V
最大浪涌电流30 A
Ir - 反向电流 0.5 uA
恢复时间2 us
最小工作温度- 65 C
最大工作温度+ 200 C
封装Cut Tape
封装Reel
产品Rectifiers
工厂包装数量100

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1N5614US thru 1N5622US
VOIDLESS-HERMETICALLY-SEALED
SURFACE MOUNT STANDARD
RECOVERY GLASS RECTIFIERS
SCOTTSDALE DIVISION
DESCRIPTION
This “standard recovery” surface mount rectifier diode series is military qualified to MIL-
PRF-19500/427 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse
voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction
using an internal “Category I” metallurgical bond. These devices are also available in
axial-leaded thru-hole package configurations (see separate data sheet for 1N5614 thru
1N5622). Microsemi also offers numerous other rectifier products to meet higher and
lower current ratings with various recovery time speed requirements including fast and
ultrafast device types in both through-hole and surface mount packages.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
Package “A”
or D-5A
FEATURES
Surface mount package series equivalent to the
JEDEC registered 1N5614 to 1N5622 series
Voidless hermetically sealed glass package
Triple-Layer Passivation
Internal “Category
I”
Metallurgical bonds
Working Peak Reverse Voltage 200 to 1000 Volts.
JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/427
Axial-leaded equivalents also available (see separate
data sheet for 1N5614 thru 1N5622)
APPLICATIONS / BENEFITS
Standard recovery 1 Amp rectifiers 200 to 1000 V
Military and other high-reliability applications
General rectifier applications including bridges, half-
bridges, catch diodes, etc.
High forward surge current capability
Extremely robust construction
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard
as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
Junction & Storage Temperature: -65
o
C to +200
o
C
Thermal Resistance: 13
o
C/W junction to end cap
Thermal Impedance: 4.5
o
C/W @ 10 ms heating time
Average Rectified Forward Current (I
O
): 1.0 Amps @
T
A
= 55ºC and 0.75 Amps @ T
A
= 100ºC
Forward Surge Current: 30 Amps @ 8.3 ms half-sine
Solder Temperatures: 260ºC for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINALS: End caps are Copper with Tin/Lead
(Sn/Pb) finish. Note: Previous inventory had solid
Silver end caps with Tin/Lead (Sn/Pb) finish.
MARKING & POLARITY: Cathode band only
TAPE & REEL option: Standard per EIA-481-B
WEIGHT: 193 mg
See package dimensions and recommended pad
layout on last page
REVERSE
CURRENT
(MAX.)
I
R
@ V
RWM
μA
25 C
0.5
0.5
0.5
0.5
0.5
o
o
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE V
RWM
VOLTS
1N5614US
1N5616US
1N5618US
1N5620US
1N5622US
200
400
600
800
1000
MINIMUM
BREAKDOWN
VOLTAGE
V
BR
@ 50μA
VOLTS
220
440
660
880
1100
AVERAGE
RECTIFIED
CURRENT
I
O
@ T
A
(NOTE 1)
AMPS
o
o
55 C
100 C
1.00
.750
1.00
.750
1.00
.750
1.00
.750
1.00
.750
FORWARD
VOLTAGE
(MAX.)
V
F
@ 3A
VOLTS
MAXIMUM
SURGE
CURRENT
I
FSM
(NOTE 2)
AMPS
30
30
30
30
30
REVERSE
RECOVERY
(NOTE 3)
t
rr
μs
2.0
2.0
2.0
2.0
2.0
1N5614US – 1N5622US
0.8 MIN.
1.3 MAX.
100 C
25
25
25
25
25
NOTE 1:
From 1 Amp at T
A
= 55
o
C, derate linearly at 5.56 mA/
o
C to 0.75 Amp at T
A
= 100
o
C. From T
A
= 100
o
C,
derate linearly at 7.5 mA/
o
C to 0 Amps at T
A
= 200
o
C. These ambient ratings are for PC boards where thermal
resistance from mounting point to ambient is sufficiently controlled where T
J(max)
does not exceed 175
o
C.
NOTE 2:
T
A
= 100
o
C, f = 60 Hz, I
O
= 750 mA for ten 8.3 ms surges @ 1 minute intervals
NOTE 3:
I
F
= 0.5A, I
RM
= 1A, I
R(REC)
= 0.250A
Copyright
©
2009
10-06-2009 REV D; SA7-45.pdf
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

 
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