1N6073 thru 1N6081
VOIDLESS HERMETICALLY SEALED
ULTRA FAST RECOVERY GLASS
POWER RECTIFIERS
SCOTTSDALE DIVISION
DESCRIPTION
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-
19500/503 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 3, 6, and 12 Amp rated rectifiers (T
L
=70ºC) in
different package sizes for working peak reverse voltages from 50 to 150 volts are
hermetically sealed with voidless-glass construction using an internal “Category I”
metallurgical bond. These devices are also available in surface mount MELF
package configurations by adding a “US” suffix (see separate data sheet for
1N6073US thru 1N6081US). Microsemi also offers numerous other rectifier
products to meet higher and lower current ratings with various recovery time speed
requirements including standard, fast and ultrafast device types in both through-hole
and surface mount packages.
APPEARANCE
WWW .
Microsemi
.C
OM
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
•
•
•
•
•
•
•
Popular JEDEC registered 1N6073 to 1N6081 series
Voidless hermetically sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “Category
I”
Metallurgical bonds
JAN, JANTX, and JANTXV available for 1N6074 and
1N6075 per MIL-PRF-19500/503
Further options for screening in accordance with MIL-
PRF-19500 for JAN, JANTX, JANTXV, or JANS by
using a MQ, MX, MV or SP prefix respectively , e.g.
MX6076, MV6079, SP6081, etc.
Surface mount equivalents also available in a square
end-cap MELF configuration with “US” suffix
•
•
•
•
•
•
•
APPLICATIONS / BENEFITS
Ultrafast recovery rectifier series 50 to 150 V
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
High forward surge current capability
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard
as described in Microsemi
MicroNote 050
•
MAXIMUM RATINGS
•
Junction Temperature: -65
o
C to +155
o
C
•
Storage Temperature: -65
o
C to +155
o
C
o
•
Peak Forward Surge Current @ 25 C: 35 Amps for
1N6073-6075, 75 Amps for 1N6076-6078, and 175
Amps for 1N6079-6081 at 8.3 ms half-sine wave
•
Average Rectified Forward Current (I
O
) at T
L
= +70
o
C
(L= 0 inch from body):
1N6073 thru 1N6075: 3.0 Amps
1N6076 thru 1N6078: 6.0 Amps
1N6079 thru 1N6081: 12.0 Amps
Average Rectified Forward Current (I
O
) at T
A
=55
o
C:
1N6073 thru 1N6075: 0.85 Amps
1N6076 thru 1N6078: 1.3 Amps
1N6079 thru 1N6081: 2.0 Amps
•
Thermal Resistance L= 0 inch (R
θ
JL
): 13
o
C/W for
o
1N6073-6075, 8.5 C/W for 1N6076-6078, and
o
5.0 C/W for 1N6079-6081
•
Solder temperature: 260
o
C for 10 s (maximum)
•
•
•
•
•
•
MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: Axial-leads are Copper with
Tin/Lead (Sn/Pb) finish
MARKING: Body painted and part number, etc.
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-296
Weight: 1N6073 thru 1N6075: 340 mg
1N6076 thru 1N6078: 750 mg
1N6079 thru 1N6081: 1270 mg
See package dimensions on last page
1N6073 thru 1N6081
•
Copyright
©
2007
10-03-2007 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N6073 thru 1N6081
VOIDLESS HERMETICALLY SEALED
ULTRA FAST RECOVERY GLASS
POWER RECTIFIERS
SCOTTSDALE DIVISION
ELECTRICAL CHARACTERISTICS @ 25
o
C
unless otherwise specified
TYPE
WORKING
PEAK
REVERSE
VOLTAGE
V
RWM
VOLTS
50
100
150
50
100
150
50
100
150
MAXIMUM
PULSED
FORWARD
TEST
VOLTAGE
CURRENT
(PULSED)
V
F @
I
F
VOLTS
AMPS
2.04
9.4
2.04
9.4
2.04
9.4
1.76
18.8
1.76
18.8
1.76
18.8
1.50
37.7
1.50
37.7
1.50
37.7
AVERAGE
RECTIFIED
CURRENT I
O
@
T
L
= 70ºC
AMPS
3.0
3.0
3.0
6.0
6.0
6.0
12.0
12.0
12.0
AVERAGE
RECTIFIED
CURRENT I
O
@
T
A
= 55ºC
AMPS
0.85
0.85
0.85
1.3
1.3
1.3
2.0
2.0
2.0
MAXIMUM
REVERSE
CURRENT
I
R
@ V
RWM
μA
1.0
1.0
1.0
5.0
5.0
5.0
10.0
10.0
10.0
MAXIMUM
REVERSE
RECOVERY
TIME*
t
rr
ns
30
30
30
30
30
30
30
30
30
MAXIMUM
SURGE
CURRENT
I
FSM
AMPS
35
35
35
75
75
75
175
175
175
WWW .
Microsemi
.C
OM
1N6073
1N6074
1N6075
1N6076
1N6077
1N6078
1N6079
1N6080
1N6081
*NOTE: I
F
= 0.5 A, I
RM
= 1.0 A, and I
R(REC)
= 0.25 A
SYMBOLS & DEFINITIONS
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery decay point after a peak
reverse current is reached.
Symbol
V
BR
V
RWM
V
F
I
R
t
rr
GRAPHS
MAXIMUM POWER DISSIPATION IN WATTS
MAXIMUM POWER DISSIPATION IN WATTS
MAXIMUM POWER DISSIPATION IN WATTS
1N6073 thru 1N6081
FIGURE 1
Maximum power in watts vs lead temperature
For 1N6079, 1N6080 and 1N6081
o
FIGURE 2
Maximum power in watts vs lead temperature
for 1N6076, 1N6077 and 1N6078
FIGURE 3
Maximum power in watts vs lead temperature
for 1N6073, 1N6074 and 1N6075
Maximum lead temperature in C (
T
L
) at point “L” from body (for maximum operating junction temperature with equal two-lead conditions).
Copyright
©
2007
10-03-2007 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
1N6073 thru 1N6081
VOIDLESS HERMETICALLY SEALED
ULTRA FAST RECOVERY GLASS
POWER RECTIFIERS
SCOTTSDALE DIVISION
Lead Length
Lead Length
R
θJL
R
θJL
R
θJL
O
O
INCHES (mm)
C/W
INCHES (mm)
C/W
INCHES (mm)
C/W
13
0.000
8.5
0.000
5.0
0.000
24
0.125 (3.17)
14.0
0.125 (3.17)
11.5
0.125 (3.17)
35
0.250 (6.35)
19.5
0.250 (6.35)
17.5
0.250 (6.35)
46
0.375 (9.53)
25.0
0.375 (9.53)
23.5
0.375 (9.53)
54
0.500 (12.70)
30.0
0.500 (12.70)
29.0
0.500 (12.70)
70
0.750 (19.05)
40.0
0.750 (19.05)
40.0
0.750 (19.05)
1N6079, 1N6080 and 1N6081
1N6076, 1N6077 and 1N6078
1N6073, 1N6074 and 1N6075
NOTES:
1. Dimensions are in inches
2. Metric equivalents (to the nearest .01mm) are given for general information only and are based upon 1 inch = 25.4 mm.
Lead Length
O
WWW .
Microsemi
.C
OM
PACKAGE DIMENSIONS
PACKAGE A
(1N6073-75)
NOTE: Lead diameter tolerance = +0.003/-0.004 inches
PACKAGE E
(1N6076-78)
NOTE: Lead diameter tolerance = +0.002/-0.003 inches
1N6073 thru 1N6081
PACKAGE G
(1N6079-81)
NOTE: Lead diameter tolerance = +0.002/-0.003 inches
Copyright
©
2007
10-03-2007 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
NXP MCU
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