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JANS1N5615US/TR

产品描述整流器
产品类别半导体    分立半导体    二极管与整流器    整流器   
文件大小125KB,共4页
制造商Microsemi
官网地址https://www.microsemi.com
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JANS1N5615US/TR概述

整流器

JANS1N5615US/TR规格参数

参数名称属性值
厂商名称Microsemi
产品种类整流器
RoHSN
安装风格SMD/SMT
封装 / 箱体A-Package-2
Vr - 反向电压 200 V
If - 正向电流1 A
类型Fast Recovery Rectifiers
配置Single
Vf - 正向电压1.6 V
最大浪涌电流25 A
Ir - 反向电流 0.5 uA
恢复时间150 ns
最小工作温度- 65 C
最大工作温度+ 175 C
产品Rectifiers
工厂包装数量1

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1N5615US thru 1N5623US
SURFACE MOUNT VOIDLESS-
HERMETICALLY SEALED FAST
RECOVERY GLASS RECTIFIERS
SCOTTSDALE DIVISION
DESCRIPTION
This “fast recovery” surface mount rectifier diode series is military qualified to MIL-
PRF-19500/429 and is ideal for high-reliability applications where a failure cannot
be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak
reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
also available in axial-leaded package configurations for thru-hole mounting (see
separate data sheet for 1N5615 thru 1N5623). Microsemi also offers numerous
other rectifier products to meet higher and lower current ratings with various
recovery time speed requirements including fast and ultrafast device types in both
through-hole and surface mount packages.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
Package “A”
or D-5A
FEATURES
Surface mount package series equivalent to the
JEDEC registered 1N5615 to 1N5623 series
Voidless hermetically sealed glass package
Triple-Layer Passivation
Internal “Category
I”
Metallurgical bonds
Working Peak Reverse Voltage 200 to 1000 Volts.
JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/429
Axial-leaded equivalents also available (see separate
data sheet for 1N5615 thru 1N5623)
APPLICATIONS / BENEFITS
Fast recovery 1 Amp rectifiers 200 to 1000 V
Military and other high-reliability applications
General rectifier applications including bridges, half-
bridges, catch diodes, etc.
High forward surge current capability
Extremely robust construction
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard
as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
Junction & Storage Temperature: -65
o
C to +175
o
C
Thermal Resistance: 13
o
C/W junction to end cap
Thermal Impedance: 4.5
o
C/W @ 10 ms heating time
Average Rectified Forward Current (I
O
): 1.0 Amps @
T
A
= 55ºC
Forward Surge Current: 30 Amps @ 8.3 ms half-sine
Solder Temperatures: 260ºC for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: End caps are Copper with
Tin/Lead (Sn/Pb) finish. Note: Previous inventory
had solid Silver end caps with Tin/Lead (Sn/Pb) finish.
MARKING & POLARITY: Cathode band only
TAPE & REEL option: Standard per EIA-481-B
WEIGHT: 193 mg
See package dimensions and recommended pad
layout on last page
REVERSE
CURRENT
(MAX.)
I
R
@ V
RWM
o
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE
V
RWM
VOLTS
200
400
600
800
1000
MINIMUM
BREAKDOWN
VOLTAGE
V
BR
@ 50μA
VOLTS
220
440
660
880
1100
AVERAGE
RECTIFIED
CURRENT
I
O
@ T
A
(NOTE 1)
AMPS
o
o
50 C
100 C
.750
1.00
.750
1.00
.750
1.00
.750
1.00
.750
1.00
FORWAR
D
VOLTAGE
(MAX.)
V
F
@ 3A
VOLTS
.8 MIN.
CAPACITANCE
(MAX.)
C @ V
R
=
12 V
f=1 MHz
pF
45
35
25
20
15
MAXIMUM
SURGE
CURRENT
I
FSM
(NOTE 2)
AMPS
25
25
25
25
25
REVERSE
RECOVERY
(MAX.)
(NOTE 3)
t
rr
ns
150
150
250
300
500
1N5615US – 1N5623US
1N5615US
1N5617US
1N5619US
1N5621US
1N5623US
1.6
MAX.
25 C
.5
.5
.5
.5
.5
μA
o
100 C
25
25
25
25
25
NOTE 1:
From 1 Amp at T
A
= 55
o
C, derate linearly at 5.56 mA/
o
C to 0.75 Amp at T
A
= 100
o
C. From T
A
= 100
o
C,
derate linearly at 7.5 mA/
o
C to 0 Amps at T
A
= 200
o
C. These ambient ratings are for PC boards where thermal
o
resistance from mounting point to ambient is sufficiently controlled where T
J(max)
does not exceed 175 C.
NOTE 2:
T
A
= 100
o
C, f = 60 Hz, I
O
= 750 mA for ten 8.3 ms surges @ 1 minute intervals
NOTE 3:
I
F
= 0.5A, I
RM
= 1A, I
R(REC)
= 0.250 A
Copyright
©
2009
10-06-2009 REV E; SD47A.pdf
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

 
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