First Sensor APD Hybrid Series Data Sheet
Part Description AD230-8-2G TO5
Order # 5001333
2.2
PIN 5
CASE/ GND
Ø 0.46
5 PL
PIN 1
V
out+
Ø9.2
PIN 2
Ø6.60
Ø8.3
116°
VIEWING
ANGLE
PIN 4
4.2
V
CC
V
out-
±1
Ø5.08
PIN CIRCLE
7.6 MIN
5 PL
1.00 SQ
ACTIVE AREA: 0.042 mm
2
(230 µm DIAMETER)
PIN 3
+V
BIAS
BACKSIDE VIEW
CHIP DIMENSIONS
Features
0.230 mm active area
Low noise
High speed
Long term stability
Description
The AD230-8-2G TO5 is an Avalanche Photodiode Amplifier
Hybrid containing a 0.042 mm
2
active area APD chip integrated
with an internal transimpedance amplifier. Hermetically
packaged in a TO-5 with a borosilicate glass window cap.
Application
Precision photometry
Analytical instruments
Medical equipment
Low light sensor
RoHS
2011/65/EU
Absolute maximum ratings
Symbol
Parameter
T
STG
T
OP
T
SOLDERING
P
V
cc
I
cc
Storage Temp
Operating Temp
Soldering Temp
Power Dissipation
Single Supply Voltage
Supply Current
Spectral response @ M = 100
Min
-55
0
-
-
+3.0
-
Max
+125
+60
+240
360
+5.5
63
Units
RESPONSIVITY (A/W)
C
C
C
mW
V
mA
60
50
40
30
20
10
0
400
500
600
700
800
900
1000
1100
Schematic
V
CC
(+5V)
PIN 2
C1
OUT+
PIN 1
AD230-8
C2
PIN 3
+V
BIAS
OUT-
PIN 4
PIN 5
CASE/GND
WAVELENGTH (nm)
Electro-optical characteristics @ 23 C
(V
CC
= single supply +3.3V, R
L
= 100W unless otherwise specified)
Symbol
Characteristic
Test Condition
Min
-3dB
S
I
cc
Frequency Response
Sensitivity*
Supply Current
-3dB @ 800 nm
= 800 nm; M = 100
Dark state
---
---
---
Typ
2
100
34
Max
---
---
63
Unit
GHz
mV/µW
mA
* Sensitivity = APD responsivity (0.45 A/W X 100 gain) x TIA gain (2.5K)
These devices are sensitive to electrostatic discharge. Please use ESD precautions when handling.
Rev. 14/02/2018
subject to change without notice
www.first-sensor.com
contact@first-sensor.com
Page 1/3
Avalanche Photodiode data @ 23
C
Symbol
Characteristic
I
D
C
V
BR
Dark Current
Capacitance
Breakdown Voltage
Temperature Coefficient of V
BR
Responsivity
Bandwidth
Rise Time
Test-condition
M = 100 (see note 1)
M = 100 (see note 1)
I
D
= 2 µA
M = 100;
= 800 nm
-3dB
Min
---
---
80
0.35
45
---
---
Typ
0.3
1.2
---
0.45
50
2
180
Max
1.0
---
120
0.55
---
---
---
Unit
nA
pF
V
V/K
A/W
GHz
ps
3dB
t
r
Optimum Gain
50
60
---
---
---
“Excess Noise” factor
M = 100
2.2
---
---
“Excess Noise” index
M = 100
0.2
---
---
Noise Current
M = 100
0.5
---
Max Gain
200
---
---
---
NEP
Noise Equivalent Power
1.0 X 10
-14
M = 100;
= 800 nm
Note 1: Measurement conditions: Setup of photo current 1 nA at M = 1 and irradiated by a 880 nm, 80 nm bandwidth LED. Increase the photo
current up to 100 nA, (M = 100) by internal multiplication due to an increasing bias voltage.
pA/Hz
1/2
W/Hz
1/2
Transimpedance amplifier data @ 25
C
(V
cc
= +3.0 V to 5.5 V, T
A
= 0°C to 70°C, 100Ω load between OUT+ and OUT-. Typical values are at T
A
= 25°C, Vcc = +3.3 V)
Parameter
Supply Voltage
Supply Current
Test-condition
Min
3
---
Typ
5
34
Max
5.5
63
3.40
52
575
---
---
668
---
---
---
---
---
Unit
V
mA
k
mV p-p
mA p-p
mA
nA
pA/Hz
1/2
GHz
kHz
µA p-p
dB
2.10
Transimpedance
Differential, measured with 40 µA p-p signal
2.75
Output impedance
Single ended per side
48
50
Maximum Differential Output Voltage
Input = 1 mA p-p
220
380
AC Input Overload
2
---
DC Input Overload
1
---
Input Referred RMS Noise
TO-5 package, see note 3
---
490
---
Input Referred Noise Density
See note 3
11
Small signal bandwidth
Source capacitance = 0.85 pF, see note 2
1.525
2.00
---
Low Frequency Cutoff
-3 dB, input < 20 µA DC
30
Transimpedance Linear Range
Gain at 40 µA p-p is within 5% of the small signal gain
40
---
---
Power Supply Rejection Ratio (PSRR)
Output referred, f < 2 MHz, PSSR = -20 Log (ΔVout / ΔVcc)
50
Note 2: Source capacitance for AD230-8-2G TO5 is the capacitance of APD.
Note 3: Input referred noise is calculated as RMS output noise/ (gain at f = 10 Mhz). Noise density is (input referred noise)/√bandwidth.
TRANSFER CHARACTERISTICS
The circuit used is an avalanche photodiode directly coupled to a high speed data handling transimpedance amplifier. The output of the APD (light generated
current) is applied to the input of the amplifier. The amplifier output is in the form of a differential voltage pulsed signal.
The APD responsivity curve is provided in Fig. 2. The term Amps/Watt involves the area of the APD and can be expressed as Amps/mm
2
/Watts/mm
2
, where
the numerator applies to the current generated divided by the area of the detector, the denominator refers to the power of the radiant energy present per
unit area. As an example assume a radiant input of 1 microwatt at 850 nm. The APD’s corresponding responsivity is 0.4 A/W.
If energy in = 1 µW, then the current from the APD = (0.4 A/W) x (1 x 10
-6
W) = 0.4 µA. We can then factor in the typical gain of the APD
of 100, making the input current to the amplifier 40 µA. From Fig. 5 we can see the amplifier output will be approximately 75 mV p-p.
APPLICATION NOTES
The AD230-8-2G TO5 is a high speed optical data receiver. It incorporates an internal transimpedance amplifier with an avalanche photodiode. This device
does not operate in DC mode or below 30 kHz.
This detector requires +3.0 V to +5.5 V voltage supply for the amplifier and a high voltage supply (100-240 V) for the APD. The internal APD follows the gain
curve published for the AD230-8 TO52-S1 avalanche photodiode. The transimpedance amplifier provides differential output signals in the range of 200
millivolts differential. The APD gain is voltage and temperature dependent. Some form of temperature compensation bias voltage control may be required.
In order to achieve highest gain, the avalanche photodiode needs a positive bias voltage (Fig. 1). However, a current limiting resistor must be placed in series
with the photodiode bias voltage to limit the current into the transimpedance amplifier.
Failure to limit this current may result in permanent failure of the
device.
The suggested initial value for this limiting resistor is 390 KOhm.
When using this receiver, good high frequency placement and routing techniques should be followed in order to achieve maximum frequency response. This
includes the use of bypass capacitors, short leads and careful attention to impedance matching. The large gain bandwidth values of this device also demand
that good shielding practices be used to avoid parasitic oscillations and reduce output noise.
Rev. 14/02/2018
subject to change without notice
www.first-sensor.com
contact@first-sensor.com
Page 2/3
Fig. 1: APD gain vs bias voltage
Fig. 2: APD spectral response (M = 1)
1000
0.7
0.6
0.5
0.4
0.3
0.2
0.1
100
10
1
130
RESPONSIVITY (A/W)
GAIN
0
135
140
145
150
155
160
165
170
400
500
600
700
800
900
1000
1100
APPLIED VOLTAGE (V)
WAVELENGTH (nm)
Fig. 3 : Differential output vs temperature
Fig.4 : APD capacitancy vs voltage
DIFFERENTIAL OUTPUT AMPLITUDE (mV p-p)
460
12
440
JUNCTION CAPACITANCE (pF)
-20
20
40
60
0
AMBIENT TEMPERATURE (°C)
80
100
420
400
380
360
340
320
300
-40
10
8
6
4
2
0
0
10
20
30
40
50
60
APPLIED BIAS VOLTAGE (V)
70
80
90
Fig. 5: Amplifier transfer function
DIFFERENTIAL OUTPUT VOLTAGE (mV p-p)
Fig. 6: Total frequency response
75
200
150
TRANSIMPEDANCE (db)
100
50
0
-50
-100
-150
-200
-100
-75
-50
-25
0
25
50
75
100
70
65
60
55
50
1M
10M
INPUT CURRENT (µA)
100M
FREQUENCY (Hz)
1G
10G
Rev. 14/02/2018
subject to change without notice
www.first-sensor.com
contact@first-sensor.com
Page 3/3
GD32 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
