VS-MBR1635-M3, VS-MBR1645-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 16 A
FEATURES
Base
cathode
2
• 150 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified according to JEDEC
®
-JESD 47
1
Cathode
3
Anode
2L TO-220AC
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
E
AS
Package
Circuit configuration
16 A
35 V, 45 V
0.57 V
40 mA at 125 °C
150 °C
24 mJ
2L TO-220AC
Single
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
The VS-MBR16... Schottky rectifier has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
16 A
pk
, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
16
35, 45
1800
0.57
-65 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-MBR1635-M3
35
VS-MBR1645-M3
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
SYMBOL
I
F(AV)
TEST CONDITIONS
T
C
= 134 °C, rated V
R
5 µs sine or 3 µs rect. pulse
Non-repetitive peak surge current
I
FSM
Following any rated load
condition and with rated
V
RRM
applied
VALUES
16
1800
A
150
24
3.6
mJ
A
UNITS
A
Surge applied at rated load condition half wave
single phase, 60 Hz
Non-repetitive avalanche energy
Repetitive avalanche current
E
AS
I
AR
T
J
= 25 °C, I
AS
= 3.6 A, L = 3.7 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Revision: 23-Nov-17
Document Number: 96267
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR1635-M3, VS-MBR1645-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
SYMBOL
V
FM (1)
I
RM (1)
C
T
L
S
dV/dt
16 A
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
Rated DC voltage
VALUES
0.63
0.57
0.2
40
1400
8.0
10 000
UNITS
V
Maximum instantaneous reverse current
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
mA
pF
nH
V/µs
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured from top of terminal to mounting plane
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style
2L TO-220AC
(JEDEC)
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
-65 to +150
-65 to +175
1.50
°C/W
0.50
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
UNITS
°C
Mounting torque
Marking device
MBR1635
MBR1645
Revision: 23-Nov-17
Document Number: 96267
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR1635-M3, VS-MBR1645-M3
www.vishay.com
Vishay Semiconductors
100
I
F
- Instantaneous Forward Current (A)
100
I
R
- Reverse Current (µA)
10
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
10
0.1
0.01
0.001
0.0001
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
5
10
15
20
25
30
35
40
45
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
10 000
C
T
- Junction Capacitance (pF)
1000
T
J
= 25 °C
100
0
10
20
30
40
50
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
0.1
0.01
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
10
0.001
0.00001
0.0001
0.001
0.01
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 23-Nov-17
Document Number: 96267
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR1635-M3, VS-MBR1645-M3
www.vishay.com
Vishay Semiconductors
15
155
Allowable Case Temperature (°C)
145
140
135
130
125
See note (1)
120
0
5
10
15
20
25
Square
wave
(D = 0.50)
Rated
V
R
applied
DC
Average Power Loss (W)
150
10
RMS limit
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
10
15
20
25
5
DC
0
0
5
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
10 000
At any rated load condition
and
with
rated
V
RRM
applied
following surge
1000
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
High-speed
switch
Freewheel
diode
40HFL40S02
+
V
d
= 25
V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
applied
Revision: 23-Nov-17
Document Number: 96267
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR1635-M3, VS-MBR1645-M3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS- MBR
1
1
2
3
4
5
-
-
-
-
2
16
3
45
4
-M3
5
Vishay Semiconductors product
Schottky MBR series
Current rating (16 = 16 A)
Voltage ratings
Environmental digit
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
35 = 35 V
45 = 45 V
-
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-MBR1635-M3
VS-MBR1645-M3
QUANTITY PER T/R
50
50
MINIMUM ORDER QUANTITY
1000
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com/doc?96156
www.vishay.com/doc?95391
Revision: 23-Nov-17
Document Number: 96267
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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