VS-MBR1535CT-M3, VS-MBR1545CT-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 7.5 A
Base 2
common
cathode
FEATURES
• 150 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
1
2
3
Anode
Anode
2
1 Common 3
cathode
3L
TO-220AB
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
E
AS
Package
Circuit configuration
2 x 7.5 A
35 V, 45 V
0.57 V
15 mA at 125 °C
150 °C
7 mJ
3L TO-220AB
Common cathode
DESCRIPTION
The VS-MBR15...CT... center tap Schottky rectifier has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
7.5 A
pk
, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
15
35/45
690
0.57
-65 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-MBR1535CT-M3
35
VS-MBR1545CT-M3
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward
current
per leg
per device
SYMBOL
I
F(AV)
TEST CONDITIONS
T
C
= 131 °C, rated V
R
Following any rated load
condition and with rated
V
RRM
applied
VALUES
7.5
15
690
150
7
2
mJ
A
A
UNITS
Maximum peak one cycle non-repetitive
surge
5 µs sine or 3 µs rect. pulse
I
FSM
Surge applied at rated load condition half wave
single phase 60 Hz
T
J
= 25 °C, I
AS
= 2 A, L = 3.5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
E
AS
I
AR
Revision: 18-Aug-17
Document Number: 96281
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR1535CT-M3, VS-MBR1545CT-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
15 A
Maximum forward voltage drop
V
FM (1)
7.5 A
15 A
Maximum instantaneous reverse current
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
Rated DC voltage
VALUES
0.84
0.57
0.72
0.1
15
400
8.0
10 000
mA
pF
nH
V/µs
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured from top of terminal to mounting plane
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink
Maximum thermal resistance,
junction to ambient
Approximate weight
minimum
maximum
Case style 3L TO-220AB
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
R
thJA
DC operation
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
- 65 to 150
- 65 to 175
3.0
0.50
60
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Mounting torque
Marking device
MBR1535CT
MBR1545CT
Revision: 18-Aug-17
Document Number: 96281
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR1535CT-M3, VS-MBR1545CT-M3
www.vishay.com
Vishay Semiconductors
100
I
F
- Instantaneous Forward Current (A)
100
I
R
- Reverse Current (mA)
10
1
0.1
0.01
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.001
0.0001
1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
5
10
15
20
25
30
35
40
45
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
(Per Leg)
1000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
0
10
20
30
40
50
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
10
1
0.1
Single pulse
(thermal resistance)
0.01
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
10
0.001
0.00001
0.0001
0.001
0.01
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 18-Aug-17
Document Number: 96281
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR1535CT-M3, VS-MBR1545CT-M3
www.vishay.com
Vishay Semiconductors
7
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
3
2
1
0
DC
150
Allowable Case Temperature (°C)
Average Power Loss (W)
6
5
4
140
DC
Square
wave
(D = 0.50)
Rated
V
R
applied
130
See note (1)
120
0
2
4
6
8
10
12
0
2
4
6
8
10
12
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
1000
At any rated load condition
and
with
rated
V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
Revision: 18-Aug-17
Document Number: 96281
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR1535CT-M3, VS-MBR1545CT-M3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS- MBR
1
2
15
3
45
4
CT
5
-M3
6
1
2
3
4
5
6
-
-
-
-
-
Vishay Semiconductors product
Schottky MBR series
Current rating (15 = 15 A)
Voltage ratings
CT = essential part number
Environmental digit
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
35 = 35 V
45 = 45 V
-
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-MBR1535CT-M3
VS-MBR1545CT-M3
QUANTITY PER T/R
50
50
MINIMUM ORDER QUANTITY
1000
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
SPICE model
www.vishay.com/doc?96154
www.vishay.com/doc?95028
www.vishay.com/doc?95294
Revision: 18-Aug-17
Document Number: 96281
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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