MCT270, MCT271, MCT272, MCT273,
MCT274, MCT275, MCT276, MCT277
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
APPROVALS
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UL recognised, File No. E91231
DESCRIPTION
The MCT27_ series of optically coupled
isolators consist of an infrared light emitting
diode and NPN silicon photo transistor in a
standard 6 pin dual in line plastic package.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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All electrical parameters 100% tested
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Custom electrical selections available
APPLICATIONS
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DC motor controllers
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Industrial systems controllers
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Measuring instruments
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Signal transmission between systems of
different potentials and impedances
1.2
2.54
7.0
6.0
Dimensions in mm
1
2
3
6
5
4
7.62
6.62
7.62
4.0
3.0
0.5
13°
Max
0.26
3.0
0.5
3.35
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
(MCT275 only)
BV
CEO
Collector-base Voltage BV
CBO
Emitter-base Voltage
BV
EBO
Power Dissipation
POWER DISSIPATION
60mA
6V
105mW
OPTION SM
SURFACE MOUNT
OPTION G
30V
80V
70V
5V
160mW
7.62
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
DB92544m-AAS/A1
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Voltage (V
R
)
Reverse Current (I
R
)
Collector-emitter Breakdown (BV
CEO
)
MCT27x (except MCT275)
MCT275
( note 2 )
Collector-base Breakdown (BV
CBO
)
Emitter-base Breakdown (BV
EBO
)
Collector-emitter Dark Current (I
CEO
)
Coupled
Current Transfer Ratio (CTR)
MCT270
MCT271
MCT272
MCT273
MCT274
MCT275
MCT276
MCT277
Collector-emitter Saturation VoltageV
CE(SAT)
Input to Output Isolation Voltage V
ISO
Input-output Isolation Resistance R
ISO
Switching Time t
ON
, t
OFF
MCT270,272
MCT271
MCT273
MCT274
MCT275,277
MCT276
Note 1
Note 2
MIN TYP MAX UNITS
1.2
3
10
1.5
V
V
µ
A
TEST CONDITION
I
F
= 20mA
I
R
= 10
µ
A
V
R
= 3V
I
C
= 1mA
I
C
= 100
µ
A
I
E
= 100
µ
A
V
CE
= 10V
Output
30
80
V
V
70
5
50
V
V
nA
50
45
75
125
225
70
15
100
90
150
250
400
210
60
0.4
%
%
%
%
%
%
%
%
V
V
RMS
V
PK
Ω
10mA I
F
, 10V V
CE
16mA I
F
, 2mA I
C
See note 1
See note 1
V
IO
= 500V (note 1)
V
CC
= 5V , R
L
= 100
Ω,
I
C
= 2mA, (fig 1)
5300
7500
5x10
10
10
7
20
25
15
3.5
µ
s
µ
s
µ
s
µ
s
µ
s
µ
s
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
V
CC
Input
R
L
= 100Ω
Output
Output
10%
t
r
t
f
t
on
t
off
10%
90%
90%
FIG 1
7/12/00
DB92544m-AAS/A2
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
1.5
150
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Ambient Temperature
I
F
= 10mA
V
CE
= 10V
1.0
100
0.5
50
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
80
70
Relative current transfer ratio
Forward current I
F
(mA)
60
50
40
30
20
10
-30
0
25
50
75
100
125
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
Relative Current Transfer Ratio
vs. Forward Current
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1
2
5
10
20
50
V
CE
= 10V
T
A
= 25°C
Ambient temperature T
A
( °C )
Collector Current vs. Collector-emitter Voltage
(Normalised to MCT270,273,275,277)
50
Collector current I
C
(mA)
40
30
20
10
0
0
7/12/00
Forward current I
F
(mA)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0
-30
0
25
50
75
Ambient temperature T
A
( °C )
100
I
F
= 16mA
I
C
= 2mA
T
A
= 25°C
50
30
20
15
10
I
F
= 5mA
2
4
6
8
10
Collector-emitter voltage V
CE
( V )
Collector-emitter saturation voltage V
CE(SAT)
(V)
DB92544m-AAS/A2
ARM技术
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