NSR1030QMUTWG
1A, 30V Schottky Full Bridge
These full bridge Schottky barrier diodes are designed for the
rectification of the high speed signal of wireless charging. The
NSR1030QMUTWG has a very low forward voltage that will reduce
conduction loss. It is housed in a UDFN 3.0 x 3.0 x 0.5 mm package
that is ideal for space constrained wireless applications.
Features
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MARKING
DIAGRAM
1
UDFN4 3x3
CASE 517DB
1030
AYWWG
G
•
Extremely Fast Switching Speed
•
Low Forward Voltage − 0.49 V (Typ) @ I
F
= 1 A
•
These Devices are Pb−Free, Halogen Free and are RoHS Compliant
Typical Applications
•
Low Voltage Full Bridge Rectification & Wireless Charging
MAXIMUM RATINGS
(T
J
= 125°C unless otherwise noted) (Note 1)
Rating
Reverse Voltage
Forward Current (DC)
Forward Current Surge Peak
(60 Hz, 1 cycle)
Non−Repetitive Peak Forward Current
(Square Wave, T
J
= 25°C prior to surge)
t = 1
ms
t = 1 ms
t=1s
Symbol
V
R
I
F
I
FSM
I
FSM
40
10
3.0
Value
30
1.0
12
Unit
V
A
A
A
1030
= Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. All specifications pertain to a single diode.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature Range
Symbol
P
D
(Note 2)
R
qJA
(Note 2)
P
D
(Note 3)
R
qJA
(Note 3)
P
D
(Note 4)
R
qJA
(Note 4)
T
J
T
stg
Max
1.80
18
55.5
0.70
7.0
142
0.80
8.0
125
+125
−55 to
+150
Unit
W
mW/°C
°C/W
W
mW/°C
°C/W
W
mW/°C
°C/W
°C
°C
DEVICE SCHEMATIC
ORDERING INFORMATION
Device
NSR1030QMUTWG
Package
UDFN4
(Pb−Free)
Shipping†
3000 / Tape &
Reel
2. 4 Layer JEDEC JESD51.7 FR−4 @ 10 mm
2
, 1 oz. copper trace, still air.
3. Single Layer JEDEC JESD51.3 FR−4 @ 100 mm
2
, 1 oz. copper trace, still air.
4. Single Layer JEDEC JESD51.3 FR−4 @ 100 mm
2
, 2 oz. copper trace, still air.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2015
May, 2017 − Rev. 1
Publication Order Number:
NSR1030QMU/D
M
NSR1030QMUTWG
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Note 5)
Characteristic
Reverse Breakdown Voltage (I
R
= 1.0 mA)
Reverse Leakage (V
R
= 30 V)
Forward Voltage (I
F
= 0.5 A)
Forward Voltage (I
F
= 1.0 A)
Reverse Recovery Time
(I
F
= I
R
= 10 mA, I
R(REC)
= 1.0 mA)
Input Capacitance (pins 1 to 3) (V
R
= 1.0 V, f = 1.0 MHz)
Symbol
V
(BR)
I
R
V
F
V
F
t
rr
C
T
Min
30
−
−
−
−
−
Typ
−
4.0
0.43
0.49
25
70
Max
−
20
0.49
0.60
−
−
Unit
V
mA
V
V
ns
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. All specifications pertain to a single diode.
820
W
+10 V
2.0 k
100
mH
0.1
mF
D.U.T.
50
W
OUTPUT
PULSE
GENERATOR
50
W
INPUT
SAMPLING
OSCILLOSCOPE
V
R
INPUT SIGNAL
90%
I
R
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
F
0.1
mF
t
r
10%
t
p
t
I
F
t
rr
t
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes:
3. t
p
» t
rr
Figure 1. Recovery Time Equivalent Test Circuit
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2
NSR1030QMUTWG
PACKAGE DIMENSIONS
UDFN4 3.0x3.0, 1.30P
CASE 517DB
ISSUE A
D
PIN ONE
INDICATOR
2X
2X
A B
E
0.10 C
0.10 C
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.05 AND 0.15 MM FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PADS AS WELL AS THE TERMINALS.
5. POSITIONAL TOLERANCE APPLIES TO ALL
OF THE EXPOSED PADS.
DIM
A
A1
A3
b
D
D2
D3
E
E2
E3
E4
e
F
F1
G
L
MILLIMETERS
MIN
MAX
0.45
0.55
0.00
0.05
0.13 REF
0.35
0.45
3.00 BSC
0.95
1.05
1.15
1.25
3.00 BSC
1.80
1.90
0.75
0.85
0.65
0.75
1.30 BSC
0.75 BSC
0.70 BSC
0.48 BSC
0.35
0.55
0.05 C
0.05 C
NOTE 4
SIDE VIEW
0.10
2X
M
D3
1
2
E3
E4
4X
4
3
4X
L
BOTTOM VIEW
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◊
ÍÍ
ÍÍ
TOP VIEW
A
A3
A1
C
SEATING
PLANE
C A B
NOTE 5
D2
F
F1
1
2
E2
0.10
b
0.10
0.05
M
M
M
C A B
NOTE 5
G
e/2
4
3
RECOMMENDED
SOLDERING FOOTPRINT*
1.30
PITCH
1.40
0.55
4X
C A B
C
NOTE 3
e
SUPPLEMENTAL
BOTTOM VIEW
1.20
0.63
2X
1.17
0.87
1.00 1
0.70
0.75
2X
2.02 3.30
0.50
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
4
NSR1030QMU/D
模拟电子
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