VS-MBR2035CT-M3, VS-MBR2045CT-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 10 A
Base 2
common
cathode
FEATURES
150 °C T
J
operation
Low forward voltage drop
High frequency operation
High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
•
•
•
•
1
2
3
Anode
Anode
2
1 Common 3
cathode
3L
TO-220AB
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
E
AS
Package
Circuit configuration
2 x 10 A
35 V, 45 V
0.57 V
15 mA at 125 °C
150 °C
8 mJ
3L TO-220AB
Common cathode
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FRM
I
FSM
V
F
T
J
T
C
= 135 °C (per leg)
t
p
= 5 μs sine
10 A
pk
, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform (per device)
VALUES
20
35/45
20
1060
0.57
-65 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-MBR2035CT-M3
35
VS-MBR2045CT-M3
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward
current
per leg
per device
SYMBOL
I
F(AV)
I
FRM
TEST CONDITIONS
T
C
= 135 °C, rated V
R
Rated V
R
, square wave, 20 kHz, T
C
= 135 °C
5 µs sine or 3 µs rect. pulse
Non-repetitive peak surge current
I
FSM
Following any rated load
condition and with rated
V
RRM
applied
VALUES
10
20
20
1060
150
2
8
mJ
A
UNITS
Peak repetitive forward current per leg
Surge applied at rated load condition half wave,
single phase, 60 Hz
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
T
J
= 25 °C, I
AS
= 2 A, L = 4 mH
Repetitive avalanche current per leg
Non-repetitive avalanche energy
per leg
I
AR
E
AS
Revision: 18-Aug-17
Document Number: 96283
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR2035CT-M3, VS-MBR2045CT-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
20 A
Maximum forward voltage drop
V
FM (1)
10 A
20 A
Maximum instantaneous reverse current
Threshold voltage
Forward slope resistance
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
V
F(TO)
r
t
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
T
J
= T
J
maximum
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured from top of terminal to mounting plane
Rated V
R
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
Rated DC voltage
VALUES
0.84
0.57
0.72
0.1
15
0.354
17.6
600
8.0
10 000
mA
V
m
pF
nH
V/µs
V
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth and greased
(only for TO-220)
TEST CONDITIONS
VALUES
-65 to +150
-65 to +175
2.0
°C/W
0.50
2
0.07
Non-lubricated threads
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf·in)
UNITS
°C
Mounting torque
Marking device
Case style 3L TO-220AB
MBR2035CT
MBR2045CT
Revision: 18-Aug-17
Document Number: 96283
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR2035CT-M3, VS-MBR2045CT-M3
www.vishay.com
Vishay Semiconductors
100
I
F
- Instantaneous Forward Current (A)
100
I
R
- Reverse Current (mA)
10
1
0.1
0.01
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.001
0.0001
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
5
10
15
20
25
30
35
40
45
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
(Per Leg)
1000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
0
10
20
30
40
50
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
10
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
0.1
Single pulse
(thermal resistance)
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
10
100
0.01
0.00001
0.0001
0.001
0.01
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 18-Aug-17
Document Number: 96283
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR2035CT-M3, VS-MBR2045CT-M3
www.vishay.com
Vishay Semiconductors
10
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
4
DC
2
150
Allowable Case Temperature (°C)
Average Power Loss (W)
145
140
DC
135
130
125
See note (1)
120
0
3
6
9
12
15
Square
wave
(D = 0.50)
Rated
V
R
applied
8
6
0
0
2
4
6
8
10
12
14
16
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
I
FSM
- Non-Repetitive Surge Current (A)
1000
At any rated load condition
and
with
rated
V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
Revision: 18-Aug-17
Document Number: 96283
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR2035CT-M3, VS-MBR2045CT-M3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS- MBR
1
2
20
3
45
4
CT
5
-M3
6
1
2
3
4
5
6
-
-
-
-
-
Vishay Semiconductors product
Schottky MBR series
Current rating (20 = 20 A)
Voltage ratings
CT = essential part number
Environmental digit
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
35 = 35 V
45 = 45 V
-
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-MBR2035CT-M3
VS-MBR2045CT-M3
QUANTITY PER T/R
50
50
MINIMUM ORDER QUANTITY
1000
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
SPICE model
www.vishay.com/doc?96154
www.vishay.com/doc?95028
www.vishay.com/doc?95295
Revision: 18-Aug-17
Document Number: 96283
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
