MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA03M4043MD
BLOCK DIAGRAM
2
3
4
RoHS Compliance , 400-430MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO
DESCRIPTION
The RA03M4043MD is a 38 dBm output RF MOSFET
Amplifier Module for 7.2 volt portable radios that operate in the
400 to 430 MHz range.
1
5
6
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
≅0
@ V
DD
=7.2V, V
GG
=0V)
• P
out
>38dBm @ V
DD
=7.2V, P
in
=19dBm
Idq1=20mA(Vgg1adjust.),Idq2=1A(Vgg2 adjust.)
@ V
DD
=7.2V, P
out
=38dBm (Pin adjust.),
Idq1=20mA(Vgg1 adjust.),Idq2=1A(Vgg2 adjust.)
• IMD3<-25dBc @ V
DD
=7.2V, P
out
(average) =35dBm (Pin
adjust)
Two tone test at 1KHz separation
Idq1=20mA(Vgg1 adjust.),Idq2=1A(Vgg2 adjust.)
• Broadband Frequency Range: 400-430MHz
• Low-Power Adjust. Current I
GG
=1mA (typ) at V
GG
=3.5V
• Module Size: 30 x 10 x 5.4 mm
•
η
T
>35%
1 RF Input (P
in
)
2 FIRST STAGE GATE BIAS DC SUPPLY TERMINAL（Vgg1）
3 FINAL STAGE GATE BIAS DC SUPPLY TERMINAL（Vgg2）
4 Drain Voltage (V
DD
), Battery
5 RF Output (P
out
)
6 RF Ground (Case)
PACKAGE CODE: H46S
RoHS COMPLIANT
• RA03M4043MD-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever ,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA03M4043MD-101
SUPPLY FORM
Antistatic tray,
25 modules/tray
RA03M4043MD
MITSUBISHI ELECTRIC
1/8
31 Jan 2007
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANT
RA03M4043MD
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL PARAMETER
V
DD
V
GG1
V
GG2
P
in
P
out
T
case(OP)
T
stg
Drain Voltage
Gate Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
CONDITIONS
V
GG
<3.5V
V
DD
<7.2V, P
in
=0mW
V
DD
<7.2V, P
in
=0mW
f=400-430MHz,
Z
G
=Z
L
=50Ω
RATING
9.2
4
4
100
10
-30 to +90
-40 to +110
UNIT
V
V
V
mW
W
°C
°C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
P
out
η
T
2f
o
ρ
in
I
GG
IMD3
IMD5
Frequency Range
Output Power
Total Efficiency
2
nd
CONDITIONS
V
DD
=7.2V,P
in
(Single Carrier)=+19dBm,
Idq1=20mA(Vgg1 adjust.),
Idq2=1A(Vgg2 adjust.)
V
DD
=7.2V,P
out
(Single Carrier) =38dBm (,Pin adjust.),
Idq1=20mA(Vgg1 adjust.),
Idq2=1A(Vgg2 adjust.)
MIN
400
38
35
TYP
MAX
430
UNIT
MHz
dBm
%
Harmonic
-25
4.4:1
1
dBc
—
mA
Input VSWR
Gate Current
3 Inter Modulation
Distortion
5 Inter Modulation
Distortion
th
rd
V
DD
=7.2V,P
out
(average)=35dBm(Pin adjust.),
Idq1=20mA(Vgg1 adjust.),
Idq2=1A(Vgg2 adjust.) ,
Two tone test at 1KHz separation
V
DD
=7.2V,P
out
(Single Carrier)=35dBm(Pin adjust.),
Across specified frequency range
Idq1=20mA(Vgg1 adjust.),
Idq2=1A(Vgg2 adjust.)
Vdd=6.0/7.2/9.2V,
Idq1=20mA(Vgg1 adjust),
Idq2=1A(Vgg2 adjust) ,
Po(Single Carrier)=15-38dBm(Pin control)
LOAD VSWR=2:1(All Phase),Zg=50Ω
Vdd=9.2V, P
out
(Single Carrier)=39dBm (Pin adjust.),
LOAD VSWR=2:1(All Phase),Zg=50Ω,
Idq1=20mA(Vgg1 adjust.@Vdd=7.2V),
Idq2=1A(Vgg2 adjust.@Vdd=7.2V)
-25
-25
dBc
dBc
GV
Gain Variation
0
4
dB
—
Stability
No parasitic oscillation
—
—
Load VSWR Tolerance
No degradation or destroy
—
All parameters, conditions, ratings, and limits are subject to change without notice.
RA03M4043MD
MITSUBISHI ELECTRIC
2/7
31 Jan 2007
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANT
RA03M4043MD
RA03M4043MD
IMD3,IMD5 vs. Po
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
RA03M4043MD
Effi vs. Po
T c=+25deg.C, Vdd=7.2V
f=400MHz,
Idq 1st stager=20mA
Idq Final Stage=1.0A
50
45
40
Effi(%),Gp(dB)
35
30
25
20
15
10
Effi
Gp
T c=+25deg.C, Vdd=7.2V
f=400MHz,
Idq 1st stager=20mA
Idq Final Stage=1.0A
0
-10
IMD3,IMD5(dBc)
-20
-30
-40
-50
-60
IMD3(Delta freq=1KHz)
IMD5(Delta freq=1KHz)
5
0
10
15
20
25
30
35
40
-70
15
20
25
30
35
40
Po(single carrier)(dBm)
Po(2tone average)(dBm)
RA03M4043MD
Effi vs. Po
T c=+25deg.C, Vdd=7.2V
f=415MHz,
Idq 1st stager=20mA
Idq Final Stage=1.0A
50
45
40
Effi(%),Gp(dB)
35
30
25
20
15
10
5
0
10
15
20
25
30
35
40
Effi
Gp
RA03M4043MD
IMD3,IMD5 vs. Po
T c=+25deg.C, Vdd=7.2V
f=415MHz,
Idq 1st stager=20mA
Idq Final Stage=1.0A
0
-10
IMD3,IMD5(dBc)
-20
-30
-40
-50
-60
-70
15
20
25
30
35
40
IMD3(Delta freq=1KHz)
IMD5(Delta freq=1KHz)
Po(single carrier)(dBm)
Po(2tone average)(dBm)
RA03M4043MD
Effi vs. Po
T c=+25deg.C, Vdd=7.2V
f=430MHz
Idq 1st stager=20mA
Idq Final Stage=1.0A
50
45
40
Effi(%),Gp(dB)
35
30
25
20
15
10
5
0
10
15
20
25
30
35
40
Effi
Gp
RA03M4043MD
IMD3,IMD5 vs. Po
T c=+25deg.C, Vdd=7.2V
f=430MHz
Idq 1st stager=20mA
Idq Final Stage=1.0A
0
-10
IMD3,IMD5(dBc)
-20
-30
-40
-50
-60
-70
15
20
25
30
35
40
IMD3(Delta freq=1KHz)
IMD5(Delta freq=1KHz)
Po(single carrier)(dBm)
Po(2tone average)(dBm)
RA03M4043MD
MITSUBISHI ELECTRIC
3/7
31 Jan 2007
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANT
RA03M4043MD
OUTLINE DRAWING
(mm)
30±0.2
26.6±0.2
21.2±0.2
(1.7)
(4.4)
2-R1.5±0.1
① ② ③
6±1
④
⑤
⑥
φ0.45±0.15
6.1±1
9.9±1
13.7±1
18.8±1
23.9±1
2.3±0.4
3.5±0.2
1.5±0.2
(5.4)
1 RF Input (P
in
)
2 Gate Voltage (V
GG
)
3 Drain Voltage (V
DD
)
4 RF Output (P
out
)
5 RF Ground (Case)
RA03M4043MD
MITSUBISHI ELECTRIC
4/7
7.4±0.2
31 Jan 2007
10±0.2
6±0.2
6±0.2
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANT
RA03M4043MD
TEST BLOCK DIAGRAM (TWO TONE)
TEST BLOCK DIAGRAM (SINGLE CARRIER)
1 RF Input (P
in
)
2 Gate Voltage (V
GG1
)
3 Gate Voltage (V
GG2
)
4 Drain Voltage (V
DD
)
5 RF Output (P
out
)
6 RF Ground (Case)
RA03M4043MD
MITSUBISHI ELECTRIC
5/7
31 Jan 2007
Microchip MCU
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