MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA05H8693M
BLOCK DIAGRAM
RoHS Compliance,866-928MHz 5W 14V, 3 Stage Amp.
DESCRIPTION
The RA05H8693M is a 5watt RF MOSFET Amplifier Module
that operate in the 866 to 928MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. The output power and
drain current increase as the gate voltage increases.
With a gate voltage around 3.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3.8V (typical) and 4V (maximum).
At V
GG
=5V, the typical gate current is 1 mA.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
≅0
@ V
DD
=14V, V
GG
=0V)
• P
out
>5W, I
T
<1.4A @ V
DD
=14V, V
GG
=5V, P
in
=1mW
• I
T
<1.4A @ V
DD
=14V, P
out
=3W(V
GG
control), P
in
=1mW
• Broadband Frequency Range: 866-928MHz
• Low-Power Control Current I
GG
=1mA (typ) at V
GG
=5V
• Module Size: 60.5 x 14 x 6.4 mm
2
3
1
4
5
1
2
3
4
5
RF Input (P
in
)
Gate Voltage (V
GG
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground (Case)
PACKAGE CODE: H11S
RoHS COMPLIANCE
• RA05H8693M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever ,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA05H8693M-101
SUPPLY FORM
Antistatic tray,
20 modules/tray
RA05H8693M
MITSUBISHI ELECTRIC
1/8
2nd Mar 2007
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA05H8693M
RATING
17
6
4
7
-30 to +110
-40 to +110
UNIT
V
V
mW
W
°C
°C
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL PARAMETER
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
CONDITIONS
V
GG
<5V
V
DD
<14V, P
in
=0mW
f=866-928MHz, V
GG
<5V
Z
G
=Z
L
=50Ω
ditto
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
P
out
I
T
2f
o
ρ
in
I
GG
—
—
Frequency Range
Output Power
Total Current
2
nd
CONDITIONS
V
DD
=14V, V
GG
=5V, P
in
=1mW
V
DD
=14V, P
out
=3W(V
GG
control)
P
in
=1mW
MIN
866
5
TYP
MAX
928
1.4
-25
3:1
UNIT
MHz
W
A
dBc
—
mA
—
—
Harmonic
Input VSWR
Gate Current
Stability
Load VSWR Tolerance
1
V
DD
=10.0-15.2V, P
in
=0.5-2mW,
P
out
<5W (V
GG
control), Load VSWR=3:1
V
DD
=15.2V, P
in
=1mW, P
out
=5W (V
GG
control),
Load VSWR=20:1
No parasitic oscillation
No degradation or destroy
All parameters, conditions, ratings, and limits are subject to change without notice.
RA05H8693M
MITSUBISHI ELECTRIC
2/8
2nd Mar 2007
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA05H8693M
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
35
OUTPUT POWER P
out
(W)
INPUT VSWR
ρ
in
(-)
30
25
20
15
10
5
0
850
η
T
ρ
in
V
DD
=14V
P
out
=3W(V
GG
adj.)
P
in
=1mW
P
out
2
nd
, 3
rd
HARMONICS versus FREQUENCY
-20
HARMONICS (dBc)
-30
-40
2
nd
V
DD
=14V
P
out
=3W(V
GG
adj.)
P
in
=1mW
120
100
TOTAL EFFICIENCY
η
T
(%)
80
60
40
20
0
970
-50
-60
-70
850
3
rd
870 890 910 930 950
FREQUENCY f(MHz)
870
890
910
930
FREQUENCY f(MHz)
950
970
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
70
OUTPUT POWER P
out
(dBm)
POWER GAIN Gp(dB)
60
50
40
30
I
DD
Gp
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
70
OUTPUT POWER P
out
(dBm)
POWER GAIN Gp(dB)
DRAIN CURRENT I
DD
(A)
60
Gp
7
6
5
4
3
f=866MHz,
V
DD
=14V,
V
GG
=5V
7
DRAIN CURRENT
I
DD
(A)
6
DRAIN CURRENT I
DD
(A)
f=896MHz,
V
GG
=5V,
P
in
=1mW
6
5
P
out
50
40
30
20
10
0
-20
-15
-10
-5
0
5
INPUT POWER P
in
(dBm)
I
DD
f=896MHz,
V
DD
=14V,
V
GG
=5V
P
out
4
3
2
1
0
20
10
0
-20
-15
-10
-5
2
1
0
0
5
INPUT POWER P
in
(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
70
OUTPUT POWER P
out
(dBm)
POWER GAIN Gp(dB)
60
50
40
30
I
DD
Gp
P
out
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
70
OUTPUT POWER P
out
(dBm)
POWER GAIN Gp(dB)
DRAIN CURRENT I
DD
(A)
60
50
40
30
I
DD
Gp
P
out
7
6
5
4
3
f=926MHz,
V
DD
=14V,
V
GG
=5V
7
DRAIN CURRENT I
DD
(A)
5
P
out
6
5
4
3
2
f=956MHz,
V
DD
=14V,
V
GG
=5V
20
10
0
-20
-15
-10
-5
2
1
0
20
10
0
-20
-15
-10
-5
0
5
INPUT POWER P
in
(dBm)
1
0
0
5
INPUT POWER P
in
(dBm)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
30
OUTPUT POWER P
out
(W)
25
20
15
10
5
0
3
5
7
9
11
13
DRAIN VOLTAGE V
DD
(V)
15
I
DD
f=866MHz,
V
GG
=5V,
P
in
=1mW
P
out
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
6
DRAIN CURRENT I
DD
(A)
5
4
3
2
1
0
OUTPUT POWER P
out
(W)
30
25
20
15
10
5
0
3
5
7
9
11
13
DRAIN VOLTAGE V
DD
(V)
15
I
DD
4
3
2
1
0
RA05H8693M
MITSUBISHI ELECTRIC
3/8
2nd Mar 2007
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA05H8693M
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
30
OUTPUT POWER P
out
(W)
25
20
15
I
DD
P
out
f=926MHz,
V
GG
=5V,
P
in
=1mW
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
6
DRAIN CURRENT I
DD
(A)
5
4
3
2
1
0
OUTPUT POWER P
out
(W)
30
25
20
15
I
DD
f=956MHz,
V
GG
=5V,
P
in
=1mW
6
DRAIN CURRENT I
DD
(A)
6
P
out
5
4
3
P
out
10
5
0
3
5
7
9
11
13
DRAIN VOLTAGE V
DD
(V)
15
10
5
0
3
5
2
1
0
7
9
11
13
DRAIN VOLTAGE V
DD
(V)
15
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
30
OUTPUT POWER P
out
(W)
25
20
15
10
5
0
3
3.5
4
4.5
5
GATE VOLTAGE V
GG
(V)
5.5
f=866MHz,
V
DD
=14V,
P
in
=1mW
P
out
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
6
OUTPUT POWER P
out
(W)
DRAIN CURRENT I
DD
(A)
5
30
25
20
15
10
5
0
3
3.5
4
4.5
5
GATE VOLTAGE V
GG
(V)
5.5
I
DD
f=896MHz,
V
DD
=14V,
P
in
=1mW
I
DD
4
3
2
1
0
4
3
2
1
0
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
30
OUTPUT POWER P
out
(W)
25
20
15
10
5
0
3
3.5
4
4.5
5
GATE VOLTAGE V
GG
(V)
5.5
f=926MHz,
V
DD
=14V,
P
in
=1mW
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
6
OUTPUT POWER P
out
(W)
DRAIN CURRENT I
DD
(A)
5
30
25
20
15
10
P
out
f=956MHz,
V
DD
=14V,
P
in
=1mW
6
DRAIN CURRENT I
DD
(A)
5
4
I
DD
I
DD
P
out
4
3
2
1
0
3
2
1
0
5
0
3
3.5
4
4.5
5
GATE VOLTAGE V
GG
(V)
5.5
RA05H8693M
MITSUBISHI ELECTRIC
4/8
DRAIN CURRENT I
DD
(A)
5
2nd Mar 2007
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA05H8693M
OUTLINE DRAWING
(mm)
60.5±1
57.5±0.5
50.4±1
2-R1.6±0.2
14±0.5
1
2
3
4
5
6±1
8.3±1
21.3±1
0.45
43.3±1
51.3±1
3.3 +0.8/-0.4
Area [A]
Expansion figure of area [A]
0.09±0.02
(49.5)
0.09±0.02
2.3±0.3
1 RF Input (P
in
)
2 Gate Voltage (V
GG
)
3 Drain Voltage (V
DD
)
4 RF Output (P
out
)
5 RF Ground (Case)
RA05H8693M
MITSUBISHI ELECTRIC
5/8
(6.4)
11±0.5
2nd Mar 2007
嵌入式系统
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