REF3212, REF3220
REF3225, REF3230
REF3233, REF3240
SBVS058B −JUNE 2005 − REVISED FEBRUARY 2006
4ppm/°C, 100µA, SOT23-6
SERIES VOLTAGE REFERENCE
FEATURES
D
EXCELLENT SPECIFIED DRIFT
PERFORMANCE:
7ppm/°C (max) at 0°C to +125°C
20ppm/°C (max) at −40°C to +125°C
MICROSIZE PACKAGE: SOT23-6
HIGH OUTPUT CURRENT:
+10mA
HIGH ACCURACY: 0.01%
LOW QUIESCENT CURRENT: 100µA
DESCRIPTION
The REF32xx is a very low drift, micropower, low-dropout,
precision voltage reference family available in the tiny
SOT23-6 package.
The small size and low power consumption (120µA max)
of the REF32xx make it ideal for portable and
battery-powered applications. This reference is stable with
any capacitive load.
The REF32xx can be operated from a supply as low as
5mV above the output voltage, under no load conditions.
All models are specified for the wide temperature range of
−40°C to +125°C.
D
D
D
D
D
LOW DROPOUT: 5mV
APPLICATIONS
D
D
D
D
PORTABLE EQUIPMENT
DATA ACQUISITION SYSTEMS
MEDICAL EQUIPMENT
TEST EQUIPMENT
AVAILABLE OUTPUT VOLTAGES
PRODUCT
REF3212
REF3220
REF3225
REF3230
VOLTAGE
1.25V
2.048V
2.5V
3.0V
3.3V
4.096V
GND_F
GND_S
ENABLE
1
2
3
REF3212
REF3220
REF3225
REF3230
REF3233
REF3240
6
5
4
OUT_F
OUT_S
IN
REF3233
REF3240
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Products
conform to specifications per the terms of Texas Instruments standard warranty.
Production processing does not necessarily include testing of all parameters.
Copyright
2005−2006, Texas Instruments Incorporated
www.ti.com
REF3212, REF3220
REF3225, REF3230
REF3233, REF3240
SBVS058B −JUNE 2005 − REVISED FEBRUARY 2006
www.ti.com
ABSOLUTE MAXIMUM RATINGS
(1)
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.5V
Output Short-Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous
Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55°C to +135°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4kV
Charged Device Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1kV
Machine Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
(1) Stresses above these ratings may cause permanent damage. Exposure
to absolute maximum conditions for extended periods may degrade
device reliability. These are stress ratings only, and functional operation of
the device at these or any other conditions beyond those specified is not
implied.
This integrated circuit can be damaged by ESD. Texas
Instruments recommends that all integrated circuits be
handled with appropriate precautions. Failure to observe
proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to
complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could
cause the device not to meet its published specifications.
PACKAGE/ORDERING INFORMATION
(1)
PRODUCT
REF3212
REF3220
REF3225
REF3230
REF3233
REF3240
OUTPUT VOLTAGE
1.25V
2.048V
2.5V
3.0V
3.30V
4.096V
PACKAGE-LEAD
SOT23-6
SOT23-6
SOT23-6
SOT23-6
SOT23-6
SOT23-6
PACKAGE DESIGNATOR
DBV
DBV
DBV
DBV
DBV
DBV
PACKAGE MARKING
R32A
R32B
R32C
R32D
R32E
R32F
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com.
PIN CONFIGURATION
Top View
SOT23
R32x
GND_F
GND_S
ENABLE
1
2
3
6
5
4
OUT_F
OUT_S
IN
NOTE:
The location of pin 1 on the REF32xx is determined by orienting the package marking as shown in the diagram above.
2
www.ti.com
REF3212, REF3220
REF3225, REF3230
REF3233, REF3240
SBVS058B −JUNE 2005 − REVISED FEBRUARY 2006
ELECTRICAL CHARACTERISTICS
Boldface
limits apply over the listed temperature range.
At T
A
= +25°C, I
LOAD
= 0mA, and V
IN
= 5V, unless otherwise noted.
REF32xx
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
REF3212 (1.25V)
OUTPUT VOLTAGE, V
OUT
Initial Accuracy
NOISE
Output Voltage Noise
Voltage Noise
f = 0.1Hz to 10Hz
f = 10Hz to 10kHz
17
24
µV
PP
µV
RMS
1.2475
−0.2
1.25
0.01
1.2525
0.2
V
%
REF3220 (2.048V)
OUTPUT VOLTAGE, V
OUT
Initial Accuracy
NOISE
Output Voltage Noise
Voltage Noise
f = 0.1Hz to 10Hz
f = 10Hz to 10kHz
27
39
µV
PP
µV
RMS
2.044
−0.2
2.048
0.01
2.052
0.2
V
%
REF3225 (2.5V)
OUTPUT VOLTAGE, V
OUT
Initial Accuracy
NOISE
Output Voltage Noise
Voltage Noise
f = 0.1Hz to 10Hz
f = 10Hz to 10kHz
33
48
µV
PP
µV
RMS
2.495
−0.2
2.50
0.01
2.505
0.2
V
%
REF3230 (3V)
OUTPUT VOLTAGE, V
OUT
Initial Accuracy
NOISE
Output Voltage Noise
Voltage Noise
f = 0.1Hz to 10Hz
f = 10Hz to 10kHz
39
57
µV
PP
µV
RMS
2.994
−0.2
3
0.01
3.006
0.2
V
%
REF3233 (3.3V)
OUTPUT VOLTAGE, V
OUT
Initial Accuracy
NOISE
Output Voltage Noise
Voltage Noise
f = 0.1Hz to 10Hz
f = 10Hz to 10kHz
43
63
µV
PP
µV
RMS
3.293
−0.2
3.3
0.01
3.307
0.2
V
%
REF3240 (4.096V)
OUTPUT VOLTAGE, V
OUT
Initial Accuracy
NOISE
Output Voltage Noise
Voltage Noise
f = 0.1Hz to 10Hz
f = 10Hz to 10kHz
53
78
µV
PP
µV
RMS
4.088
−0.2
4.096
0.01
4.104
0.2
V
%
3
REF3212, REF3220
REF3225, REF3230
REF3233, REF3240
SBVS058B −JUNE 2005 − REVISED FEBRUARY 2006
www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
Boldface
limits apply over the listed temperature range.
At T
A
= +25°C, I
LOAD
= 0mA, and V
IN
= 5V, unless otherwise noted.
REF32xx
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
REF3212 / REF3220 / REF3225 / REF3230 / REF3233 / REF3240
OUTPUT VOLTAGE TEMP DRIFT
dV
OUT
/dT
0°C
≤
T
A
≤
+125°C
−40°C
≤
T
A
≤
+125°C
LONG-TERM STABILITY
0 to 1000h
LINE REGULATION
LOAD REGULATION
Sourcing
Sinking
THERMAL HYSTERESIS(2)
First cycle
Additional cycles
DROPOUT VOLTAGE
(1)
OUTPUT CURRENT
SHORT-CIRCUIT CURRENT
Sourcing
Sinking
TURN-ON SETTLING TIME
ENABLE/SHUTDOWN
V
L
V
H
POWER SUPPLY
Voltage
Current
Over-temperature
Shutdown
TEMPERATURE RANGE
Specified
Operating
Storage
Thermal resistance, SOT23-6
θ
JA
−40
−55
−65
200
+125
+135
+150
°C
°C
°C
°C/W
I
S
V
IN
I
Q
ENABLE > 0.75 x V
IN
0°C
≤
T
A
≤
+125°C
ENABLE < 0.7V
Reference in Shutdown mode
Reference is active
I
L
= 0
V
OUT
+ 0.05
(1)
100
115
0.1
5.5
120
135
1
V
µA
mA
µA
0
0.75
×
V
IN
0.7
V
IN
V
V
to 0.1% at V
IN
= 5V with C
L
= 0
VIN −VOUT
I
LOAD
I
SC
50
40
60
mA
mA
µs
0°C
≤
T
A
≤
+125°C
V
IN
= V
OUT
+ 250mV
(1)
−10
dT
100
25
5
50
10
ppm
ppm
mV
mA
dV
OUT
/dI
LOAD
0mA < I
LOAD
< 10mA, V
IN
= V
OUT
+ 250mV(1)
−10mA < I
LOAD
< 0mA, V
IN
= V
OUT
+ 100mV(1)
−40
−60
3
20
40
60
µV/mA
µV/mA
V
OUT
+ 0.05
(1)
≤
V
IN
≤
5.5V
−65
55
15
+65
ppm
ppm/V
4
10.5
7
20
ppm/°C
ppm/°C
(1) The minimum supply voltage for the REF3212 is 1.8V.
(2) Thermal hysteresis procedure is explained in more detail in the
Applications Information
section.
(3) Load regulation is using force and sense lines; see the
Load Regulation
section for more information.
4
www.ti.com
REF3212, REF3220
REF3225, REF3230
REF3233, REF3240
SBVS058B −JUNE 2005 − REVISED FEBRUARY 2006
TYPICAL CHARACTERISTICS
At TA = +25°C, I
LOAD
= 0mA, VIN = +5V power supply, REF3225 is used for typical characteristics, unless otherwise noted.
TEMPERATURE DRIFT
(0_C to +125_C)
TEMPERATURE DRIFT
(−40_ C to +125_ C)
Population
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
Drift (ppm/_C)
Population
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Drift (ppm/_C)
OUTPUT VOLTAGE ACCURACY
vs TEMPERATURE
DROPOUT VOLTAGE
vs LOAD CURRENT
160
+125_C
140
Dropout Voltage (mV)
120
100
80
60
40
20
+25
_
C
−40_C
0.12
Output Voltage Accuracy (%)
0.08
0.04
0
−0.04
−0.08
−0.12
−
50
−
25
0
0
+25
+50
+75
+100
+125
Temperature (_C)
−15
−10
−5
0
5
10
15
Load Current (mA)
QUIESCENT CURRENT
vs TEMPERATURE
130
100
120
Quiescent Current (µA)
110
70
PSRR (dB)
100
90
80
70
−
50
60
50
40
30
20
−
25
0
+25
+50
+75
+100
+125
10
1
90
80
POWER−SUPPLY REJECTION RATIO
vs FREQUENCY
Temperature (_ C)
10
100
1k
10k
100k
Frequency (Hz)
5
嵌入式系统
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