T1610, T1635, T1650
BTA16, BTB16
Datasheet
Snubberless™, logic level and standard 16 A Triacs
A2
Features
•
•
•
•
•
•
•
Medium current Triac
Low thermal resistance with clip bonding
Low thermal resistance insulation ceramic for insulated BTA
High commutation (4Q) or very high commutation (3Q, Snubberless™)
capability
BTA series UL1557 certified (file ref: 81734)
Packages are RoHS (2002/95/EC) compliant
Insulated tab (BTA series, rated at 2500 V
RMS
)
G
A1
A2
A2
A1
G
A1
A2
G
TO-220AB
A2
TO-220AB Ins.
Applications
D²PAK
A2
A1
G
•
•
Snubberless versions (BTA/BTB...W and T1635) especially recommended for
use on inductive loads, because of their high commutation performances
On/off or phase angle function in applications such as static relays, light
dimmers and appliance motor speed controllers
Description
Available either in through-hole or surface mount packages, the BTA16, BTB16 and
T1610, T1635 and T1650 Triac series are suitable for general purpose mains power
AC switching. They can be used as ON/OFF function in applications such as static
relays, heating regulation or induction motor starting circuit. They are also
recommended for phase control operations in light dimmers and appliance motors
speed controllers.
The Snubberless™ versions (W suffix and T1610, T1635, T1650) are especially
recommended for use on inductive loads, because of their high commutation
performance.
By using an internal ceramic pad, the Snubberless™ series provide an insulated tab
(rated at 2500 V
RMS
) complying with UL standards (file reference: E81734).
Product status link
BTA16
BTB16
T1610
T1635
T1650
Product summary
I
T(RMS)
V
DRM
/V
RRM
I
GT
Snubberless™
I
GT
standard
16 A
600, 800 V
10, 35, 50 mA
25, 50 mA
DS2114
-
Rev 11
-
May 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
T1610, T1635, T1650, BTA16, BTB16
Characteristics
1
Characteristics
Table 1.
Absolute maximum ratings
Symbol
I
T(RMS)
RMS on-state current (full sine wave)
Non repetitive surge peak on-state current (full cycle,
T
j
initial = 25 °C)
I
2
t value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤ 100 ns
Parameters
TO-220AB, D
2
PAK T
c
= 100 °C
TO-220AB Ins.
F = 50 Hz
F = 60 Hz
t
p
= 10 ms
F = 120 Hz
t
p
= 10 ms
t
p
= 20 µs
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
c
= 86 °C
t
p
= 20 ms
t
p
= 16.7 ms
Value
16
160
168
144
50
V
DRM
/V
RRM
+
100
4
1
-40 to +150
-40 to +125
Unit
A
I
TSM
I
2
t
dl/dt
A
A
2
s
A/µs
V
DSM
/V
RSM
Non repetitive surge peak off-state voltage
I
GM
P
G(AV)
T
stg
T
j
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
V
A
W
°C
°C
Table 2.
Static electrical characteristics
Symbol
V
T
(1)
V
TO
(1)
R
D
(1)
I
DRM
/I
RRM
Test conditions
I
TM
= 22.5 A, t
p
= 380 µs
threshold on-state voltage
Dynamic resistance
V
DRM
= V
RRM
T
j
25 °C
125 °C
125 °C
25 °C
125 °C
Max.
Max.
Max.
Max.
Value
1.55
0.85
25
5
2
Unit
V
V
mΩ
µA
mA
1. For both polarities of A2 referenced to A1
Table 3.
Electrical characteristics (T
j
= 25 °C, unless otherwise specified) - standard (4 quadrants)
BTA16
Symbol
Parameters
Quadrant
C
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
V
D
= V
DRM
, R
L
= 3.3 kΩ, T
j
= 125 °C
I
T
= 500 mA
I
G
= 1.2 I
GT
I - III - IV
II
I - II - III
V
D
= 12 V, R
L
= 33 Ω
IV
All
All
Max.
Max.
Min.
Max.
Max.
Max.
25
40
80
25
50
1.3
0.2
50
60
120
BTB16
B
50
100
mA
V
V
mA
mA
Unit
DS2114
-
Rev 11
page 2/18
T1610, T1635, T1650, BTA16, BTB16
Characteristics
BTA16
Symbol
Parameters
Quadrant
C
dV/dt
(2)
(dV/dt)c
(2)
V
D
= 67 % V
DRM
gate open, T
j
= 125 °C
(dI/dt)c = 7 A/ms, T
j
= 125 °C
Min.
Min.
200
5
BTB16
B
400
10
V/µs
V/µs
Unit
1. Minimum I
GT
is guaranteed at 5 % of I
GT
max.
2. For both polarities of A2 referenced to A1
Table 4.
Electrical characteristics (T
j
= 25 °C, unless otherwise specified) - Snubberless and logic level (3
quadrants)
Symbol
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
Parameters
Quadrant
Max.
I - II - III
Max.
Min.
Max.
I - III
II
Max.
Max.
Min.
15
25
30
40
8.5
Min.
3.0
8.5
14
A/ms
T1610 / BTA16-
SW / BTB16-
SW
10
T1635 /
BTA16-CW /
BTB16-CW
35
1.3
0.2
35
50
60
500
50
70
80
1000
T1650 /
BTA16-BW /
BTB16-BW
50
Unit
mA
V
V
mA
mA
V/µs
V
D
= 12 V, R
L
= 30 Ω
V
D
= V
DRM
, R
L
= 3,3 kΩ, T
j
= 125 °C
I
T
= 500 mA
I
G
= 1.2 I
GT
(dV/dt)
(2)
VD = 67 % V
DRM
gate open, T
j
= 125 °C
(dV/dt)c = 0.1 V/μs, T
j
= 125 °C
(dI/dt)c
(2)
(dV/dt)c = 10 V/μs, T
j
= 125 °C
Without snubber, T
j
= 125 °C
1. Minimum I
GT
is guaranteed at 5 % of I
GT
max.
2. For both polarities of A2 referenced to A1
Table 5.
Thermal resistance
Symbol
R
th(j-c)
Max. junction to case (AC)
Junction to ambient (S = 2 cm²)
Junction to ambient
Parameters
TO-220AB / D²PAK
TO-220AB insulated
D²PAK
TO-220AB / TO-220AB ins
Value
1.2
2.1
45
60
°C/W
Unit
R
th(j-a)
1. Copper surface under tab.
DS2114
-
Rev 11
page 3/18
T1610, T1635, T1650, BTA16, BTB16
Characteristics (curves)
1.1
Characteristics (curves)
Figure 3.
RMS on-state current versus case temperature
(full cycle)
I
T(RMS)
(A)
18
16
14
12
10
8
6
4
BTA
BTB/T16
Figure 2.
Maximum power dissipation versus on-state
RMS current (full cycle)
P(W)
20
18
16
14
12
10
8
6
4
2
0
I
T
(RMS)
(A)
2
4
6
8
10
12
14
16
2
0
0
25
T
c(°C)
50
75
100
125
0
Figure 4.
On-state rms current versus ambient
temperature (full cycle)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
D²PAK
(S = 1 cm²)
Printed circuit board FR4, copper thickness: 35 µm
Figure 5.
Relative variation of thermal impedance versus
pulse duration
K = [Z
th
/R
th
]
1E+0
Zth(j-c)
I
T(RMS)
(A)
Zth(j-a)
1E-1
T
c(°C)
1E-2
1E-3
1E-2
1E-1
t
p(s)
1E+0
1E+1
1E+2
5E+2
DS2114
-
Rev 11
page 4/18
T1610, T1635, T1650, BTA16, BTB16
Characteristics (curves)
Figure 6.
On-state characteristics (maximum values)
I
TM
(A)
Tj max.
Vto = 0.85 V
Rd = 25 mΩ
Tj = Tj max.
Figure 7.
Surge peak on-state current versus number of
cycles
I
TSM
(A)
180
160
140
120
100
Non repetitive
T
j
initial=25°C
t=20ms
200
100
One cy cle
10
Tj = 25 °C
80
60
40
Repetitive
T
C
=85°C
1
0.5
V
TM
(V)
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
20
0
1
10
Numb er of cy cles
100
1000
Figure 8.
Non-repetitive surge peak on-state current for a
sinusoidal
Figure 9.
Relative variation of gate trigger current
I
GT
, I
H
, I
L
[Tj] / I
GT
, I
H
, I
L
[T
j
= 25 °C]
I
TSM
(A),I t (A s)
3000
dI/dt limitation:
50A/µs
2
2
2.5
ho lding cu rrent and latch in g cu rrent versu s ju nc ti on
temp erature (typ ic al values)
T
j
initial=25°C
2.0
I
GT
1000
I
TSM
1.5
I
H
& I
L
1.0
0.5
T( °C)
j
100
0. 01
pu ls e wi th wid th t
p
< 10 ms
0. 10
1. 00
t
p
(ms)
10. 00
0.0
-40
-20
02
04
06
08
0
100
120
140
Figure 10.
Relative variation of critical rate of decrease of
Figure 11.
Relative variation of critical rate of decrease of
main current versus (dV/dt)c (typical values)
main current versus (junction temperature (typical values)
(dl/dt)c [(dV/dt)c] / specified (dl/dt)c
2.0
SW/T1610
(dl/dt)c [Tj] / (dl/dt)c [Tj specified]
6
Snubberless and logic level types
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
B
C
5
4
T1635/T1650/CW/BW
3
2
1
(dV/dt)c (V/µs)
1.0
10.0
100.0
Tj(°C)
0
0
25
50
75
100
125
DS2114
-
Rev 11
page 5/18
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