Automotive Dual N-Channel 12 V (D-S) 175 °C MOSFETs
PowerPAK
®
SO-8L
Dual Asymmetric
FEATURES
• TrenchFET
®
power MOSFET
• AEC-Q101 qualified
• 100 % R
g
and UIS tested
• Optimized for synchronous buck applications
1
S
1
D
1
D
2
1
Top View
1
3
5.
m
m
4
G
2
Bottom View
3
S
2
2
G
1
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
N-CHANNEL 1
V
DS
(V)
R
DS(on)
() at V
GS
= 10 V
R
DS(on)
() at V
GS
= 4.5 V
R
DS(on)
() at V
GS
= 3.3 V
I
D
(A)
Configuration
Package
12
0.0083
0.0093
0.0103
20
Dual
PowerPAK SO-8L Dual Asymmetric
N-CHANNEL 2
12
0.0030
0.0035
0.0041
60
S
1
N-Channel 1 MOSFET
S
2
N-Channel 2 MOSFET
G
1
G
2
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current
Continuous source current (diode conduction)
Pulsed drain current
b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation
b
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
d, e
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount
c
Notes
a. Package limited
b. Pulse test; pulse width
300 μs, duty cycle
2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S18-0487-Rev. A, 07-May-2018
Document Number: 76441
1
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
5
15
6.
6.
m
m
m
D
1
D
2
SYMBOL
V
DS
V
GS
T
C
= 25 °C
T
C
= 125 °C
I
D
I
S
I
DM
L = 0.1 mH
T
C
= 25 °C
T
C
= 125 °C
I
AS
E
AS
P
D
T
J
, T
stg
N-CHANNEL 1
12
± 12
20
a
20
a
20
a
80
25
31.2
27
9
N-CHANNEL 2
12
60
a
51
44
175
50
125
48
16
UNIT
V
A
mJ
W
°C
-55 to +175
260
SYMBOL
R
thJA
R
thJC
N-CHANNEL 1
85
5.5
N-CHANNEL 2
85
3.1
UNIT
°C/W
SQJ204EP
www.vishay.com
Vishay Siliconix
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
V
DS
V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
Zero gate voltage drain current
I
DSS
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
On-state drain current
a
I
D(on)
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
Drain-source on-state resistance
a
R
DS(on)
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 4.5 V
V
GS
= 4.5 V
V
GS
= 3.3 V
V
GS
= 3.3 V
Forward transconductance
b
Dynamic
b
Input capacitance
C
iss
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
V
DS
= 6 V, f = 1 MHz
V
DS
= 6 V, f = 1 MHz
V
DS
= 6 V, f = 1 MHz
V
DS
= 6 V, f = 1 MHz
V
DS
= 6 V, f = 1 MHz
V
DS
= 6 V, f = 1 MHz
V
DS
= 6 V, I
D
= 2 A
V
DS
= 6 V, I
D
= 4 A
V
DS
= 6 V, I
D
= 2 A
V
DS
= 6 V, I
D
= 4 A
V
DS
= 6 V, I
D
= 2 A
V
DS
= 6 V, I
D
= 4 A
f = 1 MHz
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
-
-
-
-
-
-
-
-
-
-
-
-
1.05
0.4
995
2687
469
1240
233
619
12.3
32.3
1.8
4.9
2.4
6.6
2.15
0.88
1400
3700
700
1700
400
900
20
50
-
-
-
-
3.3
1.4
nC
pF
g
fs
V
DS
= 12 V
V
DS
= 12 V
V
DS
= 12 V, T
J
= 125 °C
V
DS
= 12 V, T
J
= 125 °C
V
DS
= 12 V, T
J
= 175 °C
V
DS
= 12 V, T
J
= 175 °C
V
DS
5 V
V
DS
5 V
I
D
= 4 A
I
D
= 10 A
I
D
= 4 A, T
J
= 125 °C
I
D
= 10 A, T
J
= 125 °C
I
D
= 4 A, T
J
= 175 °C
I
D
= 10 A, T
J
= 175 °C
I
D
= 3 A
I
D
= 8 A
I
D
= 2 A
I
D
= 5 A
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
12
12
0.5
0.5
-
-
-
-
-
-
-
-
15
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1
1
-
-
-
-
-
-
-
-
-
-
-
-
1.5
1.5
± 100
± 100
1
1
50
50
300
300
-
-
A
μA
nA
V
Gate-source threshold voltage
V
GS(th)
Gate-source leakage
I
GSS
0.00675 0.00830
0.00246 0.00300
-
-
-
-
0.01250
0.00470
0.01460
0.00560
0.00755 0.00930
0.00285 0.00350
0.00835 0.01030
0.00335 0.00410
38
66
-
-
S
V
DS
= 10 V, I
D
= 4 A
V
DS
= 10 V, I
D
= 10 A
Output capacitance
C
oss
Reverse transfer capacitance
C
rss
Total gate charge
c
Q
g
Gate-source charge
c
Q
gs
Gate-drain charge
c
Q
gd
Gate resistance
R
g
S18-0487-Rev. A, 07-May-2018
Document Number: 76441
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJ204EP
www.vishay.com
Vishay Siliconix
SYMBOL
TEST CONDITIONS
V
DD
= 6 V, R
L
= 3
,
I
D
2 A, V
GEN
= 6 V, R
g
= 1
V
DD
= 6 V, R
L
= 1.5
,
I
D
4 A, V
GEN
= 6 V, R
g
= 1
V
DD
= 6 V, R
L
= 3
,
I
D
2 A, V
GEN
= 6 V, R
g
= 1
V
DD
= 6 V, R
L
= 1.5
,
I
D
4 A, V
GEN
= 6 V, R
g
= 1
V
DD
= 6 V, R
L
= 3
,
I
D
2 A, V
GEN
= 6 V, R
g
= 1
V
DD
= 6 V, R
L
= 1.5
,
I
D
4 A, V
GEN
= 6 V, R
g
= 1
V
DD
= 6 V, R
L
= 3
,
I
D
2 A, V
GEN
= 6 V, R
g
= 1
V
DD
= 6 V, R
L
= 1.5
,
I
D
4 A, V
GEN
= 6 V, R
g
= 1
MIN.
TYP.
MAX.
UNIT
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Dynamic
b
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
-
-
-
-
-
-
-
-
10
17
5
27
22
34
5
5
15
30
10
45
ns
35
55
10
10
Turn-on delay
time
c
t
d(on)
Rise
time
c
t
r
Turn-off delay time
c
t
d(off)
Fall
time
c
t
f
Source-Drain Diode Ratings and Characteristics
b
Pulsed current
a
I
SM
I
F
= 4 A, V
GS
= 0 V
I
F
= 10 A, V
GS
= 0 V
I
F
= 4 A, di/dt = 100 A/μs
I
F
= 5 A, di/dt = 100 A/μs
I
F
= 4 A, di/dt = 100 A/μs
I
F
= 5 A, di/dt = 100 A/μs
I
F
= 4 A, di/dt = 100 A/μs
I
F
= 5 A, di/dt = 100 A/μs
I
F
= 4 A, di/dt = 100 A/μs
I
F
= 5 A, di/dt = 100 A/μs
I
F
= 4 A, di/dt = 100 A/μs
I
F
= 5 A, di/dt = 100 A/μs
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
N-Ch 1
N-Ch 2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.72
0.73
20
34
7.5
22
8
15
12
19
-0.7
-1.2
80
175
1.2
1.2
40
70
15
50
-
-
-
-
-
-
A
ns
A
Forward voltage
V
SD
V
Body diode reverse recovery time
t
rr
ns
Body diode reverse recovery charge
Q
rr
nC
Reverse recovery fall time
t
a
Reverse recovery rise time
Body diode peak reverse recovery
current
t
b
I
RM(REC)
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-0487-Rev. A, 07-May-2018
Document Number: 76441
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJ204EP
www.vishay.com
N-CHANNEL 1 TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
120
V
GS
= 10 V thru 4 V
V
GS
= 3 V
Vishay Siliconix
Axis Title
10000
50
10000
2nd line
I
D
- Drain Current (A)
2nd line
I
D
- Drain Current (A)
96
40
1000
1st line
2nd line
72
1000
1st line
2nd line
T
C
= 25 °C
30
48
V
GS
= 2 V
20
100
T
C
= 125 °C
T
C
= -55 °C
100
24
10
0
0
1
2
3
4
V
DS
- Drain-to-Source Voltage (V)
2nd line
5
10
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Output Characteristics
Transfer Characteristics
Axis Title
80
T
C
= -55 °C
T
C
= 25 °C
0.020
10000
2nd line
g
fs
- Transconductance (S)
64
1000
2nd line
R
DS(on)
- On-Resistance (Ω)
0.016
V
GS
= 4.5 V
T
C
= 125 °C
1st line
2nd line
48
0.012
V
GS
= 3.3 V
32
100
16
0.008
V
GS
= 10 V
0.004
0
0
5
10
15
I
D
- Drain Current (A)
2nd line
20
25
10
0.000
0
8
16
24
I
D
- Drain Current (A)
2nd line
32
40
Transconductance
On-Resistance vs. Drain Current
Axis Title
10000
2nd line
V
GS
- Gate-to-Source Voltage (V)
6.0
I
D
= 2 A
V
DS
= 6 V
Axis Title
10000
2nd line
C - Capacitance (pF)
C
iss
1000
4.8
1000
1000
1st line
2nd line
100
1.2
10
0
3
6
9
12
Q
g
- Total Gate Charge (nC)
2nd line
15
3.6
C
oss
1st line
2nd line
2.4
100
C
rss
100
0
2
4
6
8
10
V
DS
-
Drain -to -Source Voltage (V)
2nd line
12
10
0.0
Capacitance
Gate Charge
S18-0487-Rev. A, 07-May-2018
Document Number: 76441
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJ204EP
www.vishay.com
N-CHANNEL 1 TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
2.0
2nd line
R
DS(on)
- On-Resistance (Normalized)
I
D
= 4 A
V
GS
= 10 V
V
GS
= 4.5 V
Vishay Siliconix
Axis Title
10000
100
T
J
= 150 °C
10000
1.7
2nd line
I
S
- Source Current (A)
10
1000
1
T
J
= 25 °C
1000
V
GS
= 3.3 V
1.1
100
0.8
1st line
2nd line
100
0.1
0.5
-50 -25
25 50 75 100 125 150 175
T
J
- Junction Temperature (°C)
2nd line
0
10
0.01
0
0.3
0.6
0.9
1.2
V
SD
- Source-to-Drain Voltage (V)
2nd line
1.5
10
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
0.050
0.5
2nd line
R
DS(on)
- On-Resistance (Ω)
0.040
2nd line
V
GS(th)
Variance (V)
0.2
0.030
-0.1
I
D
= 5 mA
0.020
T
J
= 125°C
-0.4
I
D
= 250 μA
0.010
T
J
= 25 °C
-0.7
0.000
0
4
6
8
V
GS
- Gate-to-Source Voltage (V)
2nd line
2
10
-1.0
-50 -25
0
25 50 75 100 125 150 175
T
J
- Temperature (°C)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Axis Title
20
2nd line
V
DS
- Drain-to-Source Voltage (V)
1000
Axis Title
10000
I
DM
limited
19
2nd line
I
D
- Drain Current (A)
I
D
= 1 mA
100
100 μs
1000
1st line
2nd line
1st line
2nd line
18
10
I
D
limited
1 ms
10 ms
100 ms, 1 s, 10 s, DC
17
1
Limited by R
DS(on) (1)
100
16
0.1
T
C
= 25 °C
Single pulse
BVDSS limited
15
-50 -25
25 50 75 100 125 150 175
T
J
- Junction Temperature (°C)
2nd line
0
0.01
0.01
10
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
(1)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
Drain Source Breakdown vs. Junction Temperature
Safe Operating Area
S18-0487-Rev. A, 07-May-2018
Document Number: 76441
5
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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