PTFB201402FC
High Power RF LDMOS Field Effect Transistor
140 W, 28 V, 2010 – 2025 MHz
Description
The PTFB201402FC integrates two 70 W LDMOS FETs into one
open-cavity ceramic package. It is designed primarily for Doherty
cellular amplifier applications in the 2010 to 2025 MHz frequency
band. Manufactured with Wolfspeed’s advanced LDMOS process, this
device offers excellent thermal performance and superior reliability.
PTFB201402FC
Package H-37248-4
Small Signal CW
Gain & Input Return Loss, single side
V
DD
= 28 V, I
DQ
= 650 mA
Features
21.0
20.5
20.0
0
Gain
-4
-6
-8
Power Gain (dB)
19.5
19.0
18.5
18.0
17.5
17.0
16.5
16.0
1800
1900
2000
2100
2200
Input Return Loss (dB)
-2
• Broadband internal matching
• Typical CW performance, 28 V, single side
- Output power, P
1dB
= 70 W
- Efficiency = 56%
• Integrated ESD protection
• Excellent thermal stability
• Capable of handling 10:1 VSWR @ 28 V, 70 W
(CW) output power, per side
• Pb-free and RoHS-compliant
-10
IRL
-12
-14
-16
-18
Frequency (MHz)
RF Characteristics
Single-carrier WCDMA Specifications
(tested in Wolfspeed Doherty test fixture)
V
DD
= 28 V, I
DQ
(main) = 500 mA, V
GSPK
= 42.6% x V
GS1
, ƒ
1
= 1880 MHz, ƒ
2
= 2025 MHz, P
OUT
= 20 W, PAR = 10 dB @
0.01% CCDF probability
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
All published data at T
CASE
= 25°C unless otherwise indicated
Symbol
G
ps
Min
15
34
—
Typ
16
36
–38.5
Max
—
—
–33
Unit
dB
%
dBc
h
D
ACPR
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 04, 2018-06-25
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTFB201402FC
DC Characteristics
(single side)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
2
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 A
V
DS
= 28 V, I
DQ
= 650 mA
V
GS
= 10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.3
—
Typ
—
—
—
0.3
2.8
—
Max
—
1.0
10.0
—
3.3
1.0
Unit
V
µA
µA
W
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 120 W CW)
Symbol
V
DSS
V
GS
T
J
T
STG
R
qJC
Value
65
–6 to +10
200
–40 to +150
0.39
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFB201402FC V1 R0
Order Code
PTFB201402FC-V1-R0
Package Description
H-37248-4, earless flange
H-37248-4, earless flange
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
PTFB201402FC V1 R250 PTFB201402FC-V1-R250
Rev. 04, 2018-06-25
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTFB201402FC
Typical Performance
(data taken in a production test fixture)
Six-carrier TD-SCDMA Drive-up,
single side
CW Performance, single side
V
DD
= 28 V, I
DQ
= 650 mA
3
V
DD
= 28 V, I
DQ
= 650 mA, ƒ = 2018 MHz
-20
-25
-30
-40
-45
-50
-55
-60
34
35
36
37
38
39
40
41
42
43
44
45
30
25
20
15
10
Gain (dB)
-35
35
Efficiency (%)
18.8
40
18.4
Efficiency
2010 MHz
2025 MHz
30
18.0
38
39
40
41
42
43
44
45
46
47
48
49
20
Output Power (dBm)
Output Power (dBm)
V
DD
= 28 V, I
DQ
= 650 mA, ƒ = 2018 MHz
CW Performance, single side
Two-tone Performance at Various I
DQ
single side, V
DD
= 28 V, ƒ = 2018 MHz
21
60
-10
3rd Order Intermodulation
Distortion (dBc)
550 mA
-20
600 mA
650 mA
700 mA
750 mA
20
Gain
50
Efficiency (%)
Gain (dB)
-30
19
40
-40
18
Efficiency
25° C
-25°C
90° C
42
43
44
45
46
47
48
49
30
-50
17
38
39
40
41
20
-60
33
35
Output Power (dBm)
Average Output Power (dBm)
37
39
41
43
45
47
Rev. 04, 2018-06-25
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Efficiency (%)
ACPR (dBc)
Adj Lower
Adj Upper
Alt Lower
Alt Upper
Efficiency
50
45
40
19.6
60
19.2
Gain
50
PTFB201402FC
Typical Performance
(cont.)
CW Gain & Eff. vs. Output Power
at various V
DD
, single side
I
DQ
= 650 mA, ƒ = 2018 MHz
4
CW Sweep at P
1dB
, single side
V
DD
= 28 V, I
DQ
= 650 mA
20.0
19.5
60
50
40
30
20
V
DD
= 32 V
V
DD
= 28 V
V
DD
= 24 V
38 39 40 41 42 43 44 45 46 47 48 49 50
10
0
21.0
20.5
20.0
60
Efficiency
Gain
55
50
45
40
35
Power Gain (dB)
19.0
18.5
18.0
17.5
17.0
Gain (dB)
19.5
19.0
18.5
18.0
17.5
17.0
2010 MHz
2018 MHz
2025 MHz
30
25
20
38 39 40 41 42 43 44 45 46 47 48 49
Output Power (dBm)
Output Power (dBm)
single side, V
DD
= 28 V,
I
DQ
= 650 mA, 1 MHz tone spacing
50
40
2010 MHz
2018 MHz
2025 MHz
-15
Two-tone Performance at
Selected Frequencies
Efficiency
-25
Efficiency (%)
IMD3
20
10
0
-10
33
35
37
39
41
43
45
47
-35
-45
-55
-65
IMD5
Output Power, avg. (dBm)
Rev. 04, 2018-06-25
IMD (dBc)
30
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Drain Efficiency (%)
Efficiency (%)
Broadband Circuit Impedance
Nornalized to 50 Ohms
0.
0
0.
-
W
AV
E
LE
NGT
H
S T
OW
A
RD
G
E
NE
Z Source
Z Load
RA
T
O
G
S
0.0
0.1
0.2
0.3
0.4
W
ARD
LOA
D
-
T HS
T
O
L E
NG
Frequency
MHz
2010
2025
R
Z Source
W
jX
3.8
4.1
R
15.4
15.5
Z Load
W
jX
–4.4
–4.4
3.9
3.9
Z Load
2025 MHz
0.1
2010 MHz
W
<---
A VE
0.
2
See next page for reference circuit information
0. 3
0.
45
0.
05
0.
4
0.
5
0.
6
0.7
0.5
Rev. 04, 2018-06-25
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
0 .8
0.
10
0
. 40
0. 2
D
R
--
->
0.
3
45
0.
5
4
PTFB201402FC
ptfb201602ef
0.
db201602ef Dec. 3, 2009 4:50:38 PM
5
5
Z
0
= 50
W
0 .1
Z Source
2025 MHz
2010 MHz
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