Automotive N- and P-Channel 60 V (D-S) 175 °C MOSFET
PowerPAK
®
SO-8L
Dual
FEATURES
• TrenchFET
®
power MOSFET
• AEC-Q101 qualified
D
1
• 100 % R
g
and UIS tested
1
S
1
D
2
6
.
15
m
m
1
Top View
13
5.
m
m
3
4
S
2
G
2
Bottom View
2
G
1
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
1
S
2
G
2
PRODUCT SUMMARY
N-CHANNEL
V
DS
(V)
R
DS(on)
() at V
GS
= ± 10 V
R
DS(on)
() at V
GS
= ± 4.5 V
I
D
(A)
Configuration
Package
60
0.0120
0.0160
30
N- and p-pair
PowerPAK SO-8L
P-CHANNEL
-60
0.0526
0.0755
-18
G
1
S
1
N-Channel MOSFET
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current
Continuous source current (diode conduction)
a
Pulsed drain current
b
SYMBOL
V
DS
V
GS
T
C
= 25 °C
T
C
= 125 °C
I
D
I
S
I
DM
L = 0.1 mH
T
C
= 25 °C
T
C
= 125 °C
d, e
N-CHANNEL
60
± 20
30
a
24.6
30
120
23
26.4
34
11
P-CHANNEL
-60
-18
-10.3
-30
-50
-24
28.8
34
11
UNIT
V
A
Single pulse avalanche current
Single pulse avalanche Energy
Maximum power dissipation
b
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
I
AS
E
AS
P
D
T
J
, T
stg
mJ
W
°C
-55 to +175
260
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB
mount
c
SYMBOL
R
thJA
R
thJC
N-CHANNEL
85
4.3
P-CHANNEL
85
4.3
UNIT
°C/W
Notes
a. Package limited
b. Pulse test; pulse width
300 μs, duty cycle
2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S18-0386-Rev. A, 09-Apr-18
Document Number: 76266
1
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJ560EP
www.vishay.com
Vishay Siliconix
SYMBOL
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, I
D
= -250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= -10 V
V
GS
= 10 V
V
GS
= -10 V
V
GS
= 10 V
V
GS
= -10 V
V
GS
= 10 V
V
GS
= -10 V
V
GS
= 4.5 V
V
GS
= -4.5 V
V
DS
= 60 V
V
DS
= -60 V
V
DS
= 60 V, T
J
= 125 °C
V
DS
= -60 V, T
J
= 125 °C
V
DS
= 60 V, T
J
= 175 °C
V
DS
= -60 V, T
J
= 175 °C
V
DS
5 V
V
DS
5 V
I
D
= 10 A
I
D
= -10 A
I
D
= 10 A, T
J
= 125 °C
I
D
= -10 A, T
J
= 125 °C
I
D
= 10 A, T
J
= 175 °C
I
D
= -10 A, T
J
= 175 °C
I
D
= 8 A
I
D
= -8 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
MIN.
60
-60
1.5
-1.5
-
-
-
-
-
-
-
-
10
-10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.23
1.02
TYP.
-
-
2
-2
-
-
-
-
-
-
-
-
-
-
MAX.
-
-
2.5
-2.5
± 100
± 100
1
-1
50
-50
150
-150
-
-
A
μA
nA
V
UNIT
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
V
DS
V
GS(th)
I
GSS
Zero gate voltage drain current
I
DSS
On-state drain current
a
I
D(on)
0.0099 0.0120
0.0432 0.0526
-
-
-
-
0.0164
0.0872
0.0185
0.1072
Drain-source on-state resistance
a
R
DS(on)
0.0133 0.0160
0.0628 0.0755
56
16
1205
1195
560
162
29
102
18
29
4
5
2
7
0.46
2.06
-
-
1650
1650
800
250
42
150
30
45
-
-
-
-
0.70
3.10
nC
pF
S
Forward transconductance
b
Dynamic
b
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
c
Gate-source charge
c
Gate-drain charge
c
Gate resistance
g
fs
V
DS
= 15 V, I
D
= 10 A
V
DS
= -15 V, I
D
= -10 A
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= -10 V
V
GS
= 10 V
V
GS
= -10 V
V
GS
= 10 V
V
GS
= -10 V
V
DS
= 25 V, f = 1 MHz
V
DS
= -25 V, f = 1 MHz
V
DS
= 25 V, f = 1 MHz
V
DS
= -25 V, f = 1 MHz
V
DS
= 25 V, f = 1 MHz
V
DS
= -25 V, f = 1 MHz
V
DS
= 30 V, I
D
= 10 A
V
DS
= -30 V, I
D
= -10 A
V
DS
= 30 V, I
D
= 10 A
V
DS
= -30 V, I
D
= -10 A
V
DS
= 30 V, I
D
= 10 A
V
DS
= -30 V, I
D
= -10 A
f = 1 MHz
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
S18-0386-Rev. A, 09-Apr-18
Document Number: 76266
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJ560EP
www.vishay.com
Vishay Siliconix
SYMBOL
TEST CONDITIONS
V
DD
= 30 V, R
L
= 3
,
I
D
10 A, V
GEN
= 10 V, R
g
= 1
V
DD
= -30 V, R
L
= 3
,
I
D
-10 A, V
GEN
= -10 V, R
g
= 1
V
DD
= 30 V, R
L
= 3
,
I
D
10 A, V
GEN
= 10 V, R
g
= 1
V
DD
= -30 V, R
L
= 3
,
I
D
-10 A, V
GEN
= -10 V, R
g
= 1
V
DD
= 30 V, R
L
= 3
,
I
D
10 A, V
GEN
= 10 V, R
g
= 1
V
DD
= -30 V, R
L
= 3
,
I
D
-10 A, V
GEN
= -10 V, R
g
= 1
V
DD
= 30 V, R
L
= 3
,
I
D
10 A, V
GEN
= 10 V, R
g
= 1
V
DD
= -30 V, R
L
= 3
,
I
D
-10 A, V
GEN
= -10 V, R
g
= 1
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
MIN.
-
-
-
-
-
-
-
-
TYP.
12
11
4
6
20
27
4
5
MAX.
20
20
10
10
ns
35
45
10
10
UNIT
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
c
Turn-on delay time
t
d(on)
Rise
time
c
t
r
Turn-off delay time
c
t
d(off)
Fall
time
c
t
f
Source-Drain Diode Ratings and Characteristics
b
Pulsed current
a
Forward voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
Body diode peak reverse recovery
current
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
RM(REC)
I
S
= 10 A, V
GS
= 0 V
I
S
= -10 A, V
GS
= 0 V
I
F
= 10 A, di/dt = 100 A/μs
I
F
= -10 A, di/dt = 100 A/μs
I
F
= 10 A, di/dt = 100 A/μs
I
F
= -10 A, di/dt = 100 A/μs
I
F
= 10 A, di/dt = 100 A/μs
I
F
= -10 A, di/dt = 100 A/μs
I
F
= 10 A, di/dt = 100 A/μs
I
F
= -10 A, di/dt = 100 A/μs
I
F
= 10 A, di/dt = 100 A/μs
I
F
= -10 A, di/dt = 100 A/μs
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.83
-0.88
37
39
24
58
14
29
23
10
-1.3
-3.3
120
-50
1.2
-1.2
80
80
50
120
-
-
-
-
-
-
A
ns
A
V
ns
nC
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-0386-Rev. A, 09-Apr-18
Document Number: 76266
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJ560EP
www.vishay.com
N-CHANNEL TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
100
V
GS
= 10 V thru 5 V
Vishay Siliconix
Axis Title
10000
100
10000
80
2nd line
I
D
- Drain Current (A)
V
GS
= 4 V
80
1000
1st line
2nd line
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
T
C
= 125 °C
T
C
= 25 °C
60
60
40
100
20
V
GS
= 3 V
40
100
20
T
C
= -55 °C
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Output Characteristics
Transfer Characteristics
Axis Title
100
T
C
= -55 °C
T
C
= 25 °C
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
0.05
2nd line
g
fs
- Transconductance (S)
80
0.04
1000
1st line
2nd line
60
T
C
= 125 °C
0.03
V
GS
= 4.5 V
40
0.02
100
20
0.01
V
GS
= 10 V
0
0
4
8
12
16
20
I
D
- Drain Current (A)
2nd line
10
0.00
0
18
36
54
72
90
I
D
- Drain Current (A)
2nd line
Transconductance
On-Resistance vs. Drain Current
Axis Title
1600
10000
2nd line
V
GS
- Gate-to-Source Voltage (V)
10
V
DS
= 30 V
I
D
= 10 A
Axis Title
10000
1280
2nd line
C - Capacitance (pF)
C
iss
8
1000
1st line
2nd line
100
2
10
0
4
8
12
16
20
Q
g
- Total Gate Charge (nC)
2nd line
6
1000
1st line
2nd line
960
C
oss
640
100
320
C
rss
4
0
0
12
24
36
48
60
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
0
Capacitance
Gate Charge
S18-0386-Rev. A, 09-Apr-18
Document Number: 76266
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJ560EP
www.vishay.com
N-CHANNEL TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
1.9
2nd line
R
DS(on)
- On-Resistance (Normalized)
I
D
= 10 A
V
GS
= 10 V
Vishay Siliconix
Axis Title
10000
100
10000
1.6
2nd line
I
S
- Source Current (A)
10
1000
1
T
J
= 150 °C
1000
1st line
2nd line
1.3
V
GS
= 4.5 V
1.0
100
0.7
100
0.1
T
J
= 25 °C
0.4
-50 -25
0
25
50
75 100 125 150 175
T
J
- Junction Temperature (°C)
2nd line
10
0.01
0
0.2
0.5
0.7
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
2nd line
10
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
Axis Title
0.060
10000
0.50
2nd line
R
DS(on)
- On-Resistance (Ω)
0.048
1000
1st line
2nd line
0.036
2nd line
V
GS(th)
Variance (V)
0.20
-0.10
I
D
= 5 mA
0.024
T
J
= 125°C
-0.40
100
0.012
T
J
= 25 °C
-0.70
I
D
= 250 μA
0.000
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
-1.00
-50 -25
0
25
50
75 100 125 150 175
T
J
- Temperature (°C)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Axis Title
76
2nd line
V
DS
- Drain-to-Source Voltage (V)
I
D
= 1 mA
1000
I
DM
limited
74
100
I
D
- Drain Current (A)
100 μs
I
D
limited
1
Limited by R
DS(on)
*
1st line
2nd line
72
10
1 ms
10 ms
100 ms, 1
s,
10
s,
DC
70
68
0.1
T
C
= 25
°C
single
pulse
BVDSS limited
66
-50 -25
0
25
50
75 100 125 150 175
T
J
- Junction Temperature (°C)
2nd line
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Drain Source Breakdown vs. Junction Temperature
Safe Operating Area
S18-0386-Rev. A, 09-Apr-18
Document Number: 76266
5
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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