GTVA263202FC
Thermally-Enhanced High Power RF GaN on SiC HEMT
340 W, 48 V, 2620 – 2690 MHz
Description
The GTVA263202FC is a 340-watt (P
3dB
) GaN on SiC high electron mobility
transistor (HEMT) for use in multi-standard cellular power amplifier
applications. It features input matching, high efficiency, and a thermally-
enhanced surface-mount package with earless flange.
GTVA263202FC
Package H-37248-4
V
DD
= 48 V, I
DQ(M)
= 200 mA, I
DQ(PK)
= 200 mA,
ƒ = 2690 MHz 3GPP WCDMA signal,
PAR = 10 dB, 3.84 MHz BW
Peak/Average Ratio, Gain (dB)
32
28
24
20
16
12
8
4
0
29
PAR @ 0.01% CCDF
gtva263202fc_g1
Single-carrier WCDMA Drive-up
Features
80
•
GaN on SiC HEMT technology
•
Input matched
•
Typical pulsed CW performance, 2690 MHz, 48 V,
combined outputs
- Output power at P
3dB
= 340 W
- Drain efficiency = 70%
- Gain = 16 dB
•
Capable of handling 10:1 VSWR @48 V, 80 W
(CW) output power
•
Human Body Model Class 1B (per ANSI/ESDA/
JEDEC JS-001)
•
Low thermal resistance
•
Pb-free and RoHS compliant
Gain
Efficiency
60
20
0
-20
-40
-60
45
49
53
-80
33
37
41
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications
(tested in Wolfspeed production test fixture)
V
DD
= 48 V, I
DQ
= 200 mA (per side), P
OUT
= 80 W avg, ƒ = 2690 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/
average = 10 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Adjancent Channel Power Ratio
All published data at T
CASE
= 25°C unless otherwise indicated
Efficiency (%)
40
Symbol
G
ps
Min
16
34
—
Typ
17
40
–29
Max
—
—
–26.5
Unit
dB
%
dBc
h
D
ACPR
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 04, 2018-05-08
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
GTVA263202FC
DC Characteristics
Characteristic
Drain-source Breakdown Voltage
Drain-source Leakage Current
Gate Threshold Voltage
2
Conditions
V
GS
= –8 V, I
D
= 21 mA
V
GS
= –8 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 21 mA
Symbol
V
(BR)DSS
I
DSS
V
GS(th)
Min
150
—
–3.8
Typ
—
—
–3.0
Max
—
5
–2.3
Unit
V
mA
V
Recommended Operating Conditions
Parameter
Drain Operating Voltage
Gate Quiescent Voltage
V
DS
= 50 V, I
D
= 200 mA
Conditions
Symbol
V
DD
V
GS(Q)
Min
0
—
Typ
—
–2.8
Max
50
—
Unit
V
V
Absolute Maximum Ratings
Parameter
Drain-source Voltage
Gate-source Voltage
Gate Current
Drain Current
Junction Temperature
Storage Temperature Range
Symbol
V
DSS
V
GS
I
G
I
D
T
J
T
STG
Value
125
–10 to +2
20
7.5
225
–65 to +150
Unit
V
V
mA
A
°C
°C
Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings;
exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated
within the operating voltage range (V
DD
) specified above.
Thermal Characteristics
Characteristic
Thermal Resistance
(T
CASE
= 70 °C, 80 W (CW))
Symbol
R
q
JC
Value
0.5
Unit
°C/W
Ordering Information
Type and Version
GTVA263202FC V1 R0
GTVA263202FC V1 R2
Order Code
GTVA263202FC-V1-R0
GTVA263202FC-V1-R2
Package Description
H-37248-4, earless flange
H-37248-4, earless flange
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Rev. 04, 2018-05-08
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
GTVA263202FC
Typical Performance
(data taken in a production test fixture)
Single-carrier WCDMA Broadband
Performance
V
DD
= 48 V, I
DQ(M)
= 200 mA,
I
DQ(PK)
= 200 mA,
60
50
19
3
V
DD
= 48 V, I
DQ(M)
= 200 mA, I
DQ(PK)
= 200 mA,
ƒ = 2690 MHz, 3GPP WCDMA signal,
PAR = 10 dB, BW = 3.84 MHz
-15
Single-carrier WCDMA Drive-up
P
OUT
= 49.03 dBm, 3GPP WCDMA signal,
PAR = 10 dB
Gain
55
ACP Up & Low (dBc)
-25
-35
-45
-55
-65
-75
ACPU
ACPL
Eff
30
20
10
0
Gain (dB)
40
Efficiency(%)
17
Efficiency
45
16
40
29
33
37
41
45
49
gtva263202fc_g2
53
Average Output Power (dBm)
15
2550
2600
2650
2700
gtva263202fc_g3
35
2750
Frequency (MHz)
-10
-15
V
DD
= 48 V, I
DQ(M)
= 200 mA, I
DQ(PK)
= 200 mA,
P
OUT
= 49.03 dBm, 3GPP WCDMA signal,
PAR = 10 dB
Return Loss
Single-carrier WCDMA Broadband
Performance
I
DQ(M)
= 200mA, I
DQ(PK)
= 200mA,
ƒ
= 2690 MHz
-10
-15
20
19
Gain
CW Pulse Performance
at Various V
DD
90
80
70
Return Loss (dB)
18
ACP Up (dBc)
-20
-25
ACP Up
-20
-25
-30
-35
2750
Gain (dB)
17
16
15
14
13
12
Efficiency
gtva263202fc_g6
V
DD
= 44 V
V
DD
= 48 V
V
DD
= 52 V
50
40
30
20
10
0
-30
-35
2550
2600
Frequency (MHz)
2650
2700
gtva263202fc_g4
36 38 40 42 44 46 48 50 52 54 56 58
Output Power (dBm)
Rev. 04, 2018-05-08
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Efficiency (%)
60
Efficiency (%)
18
50
GTVA263202FC
Typical Performance
(cont.)
4
V
DD
= 48 V, I
DQ(M)
= 200 mA, I
DQ(PK)
= 200 mA
22
20
Gain
Small Signal CW
Gain & Input Return Loss
-4
Gain (dB)
18
16
14
12
10
2500
IRL
-12
-16
-20
-24
gtva263202fc_g7
2550
2600
2650
2700
2750
-28
2800
Frequency (MHz)
Load Pull Performance
Load Pull Performance (per side)
– Pulsed CW signal: 10 µs, 10% duty cycle, 48 V, I
DQ
= 200 mA
P
3dB
Max Output Power
Freq
[MHz]
2620
2655
2690
Zs
[
W]
8.5 – j7
8.9 – j8.5
9.7 – j9.7
Zl
[
W
]
2.45 – j3.5
2.96 – j3.6
3.0 – j3.86
Gain
[dB]
14.95
14.67
14.5
P
OUT
[dBm]
53.75
53.77
53.75
P
OUT
[W]
237
238
237
PAE
[%]
65.9
67.7
68.2
Zl
[
W
]
2.0 – j1.1
2.43 – j1.8
2.17 – j1.9
Gain
[dB]
16.36
15.88
15.84
Input Return Loss (dB)
-8
Max PAE
P
OUT
[dBm]
51.13
52.39
52.02
P
OUT
[W]
130
173
159
PAE
[%]
77.3
77.2
77.6
Rev. 04, 2018-05-08
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
GTVA263202FC
Reference Circuit, 2620 - 2690 MHz
5
RO4350, 20 MIL
(61)
C207
VDD
C102
C103
VDD
C202
C206 C201
C101
L1
R101
GTVA263202FC_
OUT_04
C104
C105
RF_IN
C203
C204
RF_OUT
C109
C205
R102
VDD
L2
C106
RO4350, 20 MIL
C108
C107
VDD
C210
C209
C208
C211
GTVA263202FC_IN_04
G t va26 320 2f c_ C D_ 05 - 18 - 20 18
Reference circuit assembly diagram (not to scale)
Rev. 04, 2018-05-08
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Microchip MCU
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