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MMS9013L-TP

产品描述双极晶体管 - 双极结型晶体管(BJT) 350mW ZENER
产品类别半导体    分立半导体    晶体管    双极晶体管 - 双极结型晶体管(BJT)   
文件大小241KB,共3页
制造商Micro Commercial Components (MCC)
标准
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MMS9013L-TP概述

双极晶体管 - 双极结型晶体管(BJT) 350mW ZENER

MMS9013L-TP规格参数

参数名称属性值
厂商名称Micro Commercial Components (MCC)
产品种类双极晶体管 - 双极结型晶体管(BJT)
技术Si
安装风格SMD/SMT
封装 / 箱体SOT-23-3
晶体管极性NPN
配置Single
集电极—基极电压 VCBO40 V
发射极 - 基极电压 VEBO5 VDC
集电极—射极饱和电压0.6 V
最大直流电集电极电流0.5 A
增益带宽产品fT150 MHz
最小工作温度- 55 C
最大工作温度+ 150 C
直流电流增益 hFE 最大值350
封装Cut Tape
封装MouseReel
封装Reel
直流集电极/Base Gain hfe Min120
Pd-功率耗散0.3 W
工厂包装数量3000

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MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
MMS9013-L
MMS9013-H
NPN Silicon
Plastic-Encapsulate
Transistor
SOT-23
A
D
Features
Halogen
free available upon request by adding suffix "-HF"
SOT-23 Plastic-Encapsulate Transistors
Capable of 0.3Watts(Tamb=25
O
C) of Power Dissipation.
Collector-current 0.5A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Marking : J3
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Base Breakdown Voltage
(I
C
=100μAdc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
C
=0.1mAdc, I
B
=0)
Emitter-Base Breakdown Voltage
(I
E
=100μAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=40Vdc, I
E
=0)
Collector Cutoff Current
(V
CE
=20Vdc, I
B
=0)
Emitter Cutoff Current
(V
EB
=5.0Vdc, I
C
=0)
DC Current Gain
(I
C
=50mAdc, V
CE
=1.0Vdc)
DCCurrent Gain
(I
C
=500mAdc, V
CE
=1.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=500mAdc, I
B
=50mAdc)
Base-Emitter Saturation Voltage
(I
C
=500mAdc, I
B
=50mAdc)
Base- Emitter Voltage
(I
E
=100mAdc)
Transistor Frequency
(I
C
=20mAdc, V
CE
=6.0Vdc, f=30MHz)
Min
40
25
5.0
---
---
---
Max
---
---
---
0.1
0.1
0.1
Units
C
B
OFF CHARACTERISTICS
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
Vdc
C
B
E
Vdc
Vdc
F
E
μAdc
μAdc
μAdc
G
H
J
K
DIMENSIONS
INCHES
MIN
MAX
.110
.120
.083
.104
.047
.055
.035
.041
.070
.081
.018
.024
.0005
.0039
.035
.044
.003
.007
.015
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
ON CHARACTERISTICS
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
EB
120
40
---
---
---
350
---
0.6
1.2
1.4
---
---
Vdc
Vdc
Vdc
DIM
A
B
C
D
E
F
G
H
J
K
Suggested Solder
Pad Layout
.031
.800
SMALL-SIGNAL CHARACTERISTICS
f
T
150
---
MHz
.035
.900
.079
2.000
inches
mm
CLASSIFICATION OF H
FE (1)
Rank
Range
L
120-200
H
200-350
.037
.950
.037
.950
www.mccsemi.com
Revision:
B
1 of 2
2013/01/01

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