PTFB093608FV
Thermally-Enhanced High Power RF LDMOS FET
360 W, 28 V, 920 – 960 MHz
Description
The PTFB093608FV is a 360 LDMOS FET intended for use in
multi-standard cellular power amplifier applications in the 920 to 960
MHz frequency band. Features include input and output matching,
high gain and thermally-enhanced package with earless flange.
Manufactured with Wolfspeed's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PTFB093608FV
Package H-37275G-6/2
Two-carrier WCDMA 3GPP Drive Up
V
DD
= 28 V, I
DQ
= 2.8 A,
ƒ =
960 MHz,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
Features
• Broadband internal matching
• Enhanced for use in DPD error correction systems
and Doherty applications
60
50
40
30
20
21.0
20.5
• Wide video bandwidth
• Typical two-carrier WCDMA performance,
960 MHz, 28 V
- Average output power = 160 W
- Gain = 19 dB
- Efficiency = 40%
• Integrated ESD protection
• Low thermal resistance
• Capable of handling 10:1 VSWR @ 32 V, 960 MHz,
+3 dB input overdrive = 500 W (CW) output power
• Pb-Free and RoHS compliant
Gain (dB)
20.0
19.5
19.0
18.5
18.0
35
Gain
Efficiency
10
0
40
45
50
55
Output Power Avg. (dBm)
RF Characteristics
Single-carrier WCDMA Specifications
(tested in Wolfspeed test fixture)
V
DD
= 28 V, I
DQ
= 2.8 A, P
OUT
= 112 W average, ƒ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 10 dB @
0.01% CCDF probability
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
All published data at T
CASE
= 25°C unless otherwise indicated
Drain Efficiency (%)
Symbol
G
ps
Min
18
33.5
—
Typ
19
35
–33
Max
—
—
–31
Unit
dB
%
dBc
h
D
ACPR
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 06, 2018-06-22
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTFB093608FV
RF Characteristics
(cont.)
Two-tone Specifications
(not subject to production test–verified by design/characterization in Wolfspeed test fixture)
V
DD
= 28 V, I
DQ
= 2.8 A, P
OUT
= 315 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz
2
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
—
—
—
Typ
20
42
–30
Max
—
—
—
Unit
dB
%
dBc
h
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
I
GSS
R
DS(on)
V
GS
Min
65
—
—
—
—
2.5
Typ
—
—
—
—
0.05
3.9
Max
—
1.0
10.0
1.0
—
4.5
Unit
V
µA
µA
µA
Gate Leakage Current
On-State Resistance
Operating Gate Voltage
V
GS
= 10 V, V
DS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 2.8 A
W
V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 28 V, 360 W CW)
Symbol
V
DSS
V
GS
T
J
T
STG
R
qJC
Value
65
–6 to +10
200
–40 to +150
0.12
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFB093608FV V3 R0
PTFB093608FV V3 R2
Order Code
PTFB093608FV-V3-R0
PTFB093608FV-V3-R2
Package and Description
H-37275G-6/2, earless flange
H-37275G-6/2, earless flange
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Rev. 06, 2018-06-22
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTFB093608FV
Typical Performance
(data taken in a production test fixture)
Single-carrier WCDMA Broadband
Gain & Return Loss vs. Frequency
V
DD
= 28 V, I
DQ
= 2.8 A
, P
OUT
= 100 W
3
Single-carrier WCDMA Broadband
Efficiency & ACPR vs. Frequency
V
DD
= 28 V, I
DQ
= 2.8 A, P
OUT
= 100 W
21
0
42
-20
Gain
Efficiency (%)
Gain (dB)
32
-30
19
-20
IRL
27
ACPU
-35
18
860
880
900
920
940
960
980 1000 1020
-30
22
860
880
900
920
940
960
980
1000
-40
Frequency (MHz)
Frequency (MHz)
V
DD
= 28 V, I
DQ
= 2.8 A, ƒ = 960 MHz
3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz
Single-carrier WCDMA 3GPP Drive-up
V
DD
= 28 V, I
DQ
= 2.8 A, ƒ = 960 MHz
3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz
Single-carrier WCDMA 3GPP Drive-up
-20
-30
50
40
30
24
20
60
Gain
Efficiency
ACP (dBc)
16
12
8
4
0
36
20
0
-40
-50
-60
-70
34
38
42
46
50
54
ACP Low
20
PAR @ .01% CCDF
-20
-40
-60
ACP Up
Efficiency
10
0
ACP Low
38
40
42
44
46
48
50
52
54
Output Power Avg. (dBm)
Output Power Avg. (dBm)
Rev. 06, 2018-06-22
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Efficiency (%) / ACP(dBc)
40
Drain Efficiency (%)
PAR & Gain (dB)
ACPR (dB)
20
-10
Return Loss (dB)
37
Efficiency
-25
PTFB093608FV
Typical Performance
(cont.)
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 28 V, I
DQ
= 2.8 A, 3GPP WCDMA,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
4
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 28 V, I
DQ
= 2.8 A, ƒ = 960 MHz,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
-20
-25
-30
IMD & ACPR (dBc)
IMD (dBc)
-35
-40
-45
-50
-55
36
-30
-40
-50
-60
IMD Up
IMD Low
30
20
10
0
IMD Low
ACPR
IMD Up
38
40
42
44
46
48
50
52
54
35
40
45
50
55
Output Power Avg. (dBm)
Output Power Avg. (dBm)
Broadband Circuit Impedance
Z Source
G
G
D
S
Z Load
D
Frequency
MHz
910
920
930
940
950
960
970
R
Z Source
W
jX
–1.74
–1.73
–1.72
–1.71
–1.69
–1.66
–1.64
R
1.84
1.78
1.72
1.66
1.61
1.55
1.50
Z Load
W
jX
–1.52
–1.46
–1.40
–1.35
–1.29
–1.23
–1.17
0.89
0.86
0.83
0.81
0.79
0.77
0.75
Rev. 06, 2018-06-22
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Drain Efficiency (%)
960 Lower
960 Upper
940 Lower
940 Upper
920 Lower
920 Upper
-10
50
Efficiency
-20
40
PTFB093608FV
Alternative Peak-tune Load Pull Characteristics
Power Sweep, under Pulsed Conditions
V
DD
=28
V
DC
, I
DQ
= 1400 mA, Pulsed CW, 12 µsec,
10% Duty Cycle, single side measurement
5
55
53
Output Power (dBm)
51
49
47
45
43
24
26
28
30
32
34
960 MHz
940 MHz
920 MHz
36
38
Input Power (dBm)
Frequency
MHz
920
940
960
dBm
53.95
53.80
53.58
P
1dB
W
248
240
228
Impedance at P
1dB
Frequency
MHz
920
940
960
R
3.76
4.99
4.72
Z Source
W
jX
–2.08
–2.64
–2.70
R
Z Load
W
jX
–2.42
–2.48
–2.42
1.35
1.27
1.22
Note: Load pull test fixture tuned for peak P
1dB
output power at 28 V.
Measurement on single side.
Rev. 06, 2018-06-22
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
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