NVMFS6H858N
Power MOSFET
80 V, 20.7 mW, 32 A, Single N−Channel
Features
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low R
DS(on)
to Minimize Conduction Losses
Low Q
G
and Capacitance to Minimize Driver Losses
NVMFS6H858NWF − Wettable Flank Option for Enhanced Optical
Inspection
•
AEC−Q101 Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJC
(Notes 1, 3)
Power Dissipation
R
qJC
(Note 1)
Continuous Drain
Current R
qJA
(Notes 1, 2, 3)
Power Dissipation
R
qJA
(Notes 1, 2)
Pulsed Drain Current
T
C
= 25°C
Steady
State
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
T
L
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
80
±20
29
21
42
21
8.4
6.0
3.5
1.8
137
−55 to
+ 175
35
151
260
A
°C
A
mJ
°C
W
A
W
Unit
V
V
A
www.onsemi.com
V
(BR)DSS
80 V
R
DS(ON)
MAX
20.7 mW @ 10 V
I
D
MAX
32 A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
1
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (I
L(pk)
= 3.5 A)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
S
S
S
G
D
XXXXXX
AYWZZ
D
D
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
XXXXXX = 6H858N
XXXXXX =
(NVMFS6H858N) or
XXXXXX =
858NWF
XXXXXX =
(NVMFS6H858NWF)
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
Symbol
R
qJC
R
qJA
Value
3.5
42.5
Unit
°C/W
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2018
1
August, 2018 − Rev. 1
Publication Order Number:
NVMFS6H858N/D
NVMFS6H858N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
V
GS
= 0 V,
V
DS
= 80 V
T
J
= 25
°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
80
44
10
250
100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
I
GSS
V
DS
= 0 V, V
GS
= 20 V
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
V
GS
= V
DS
, I
D
= 30
mA
2.0
−7.5
4.0
V
mV/°C
V
GS
= 10 V
I
D
= 5 A
16.9
36
20.7
mW
S
V
DS
=15 V, I
D
= 10 A
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
SWITCHING CHARACTERISTICS
(Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 5 A
T
J
= 25°C
T
J
= 125°C
0.8
0.7
29
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 10 A
19
9.0
23
nC
ns
1.2
V
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 10 V, V
DS
= 64 V,
I
D
= 10 A, R
G
= 2.5
W
8.0
17
19
13
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
V
GS
= 10 V, V
DS
= 40 V; I
D
= 10 A
V
GS
= 10 V, V
DS
= 40 V; I
D
= 10 A
V
GS
= 0 V, f = 1 MHz, V
DS
= 40 V
510
80
4.7
8.9
2.2
2.8
1.7
4.8
V
nC
pF
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
RR
t
a
t
b
Q
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
5. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NVMFS6H858N
TYPICAL CHARACTERISTICS
180
V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
150
120
90
60
30
0
0
1
2
3
4
5
6
7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
6V
150
T
J
= 25°C
120
90
60
30
0
8
0
1
T
J
= 125°C
2
3
4
T
J
= −55°C
5
6
7
8
9
10
180
5V
4V
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
30
T
J
= 25°C
I
D
= 5 A
25
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
30
Figure 2. Transfer Characteristics
T
J
= 25°C
26
22
20
18
V
GS
= 10 V
15
14
10
1
2
3
I
D
, DRAIN CURRENT (A)
4
5
10
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.5
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
V
GS
= 10 V
I
D
= 5 A
2.0
I
DSS
, LEAKAGE (nA)
10K
100K
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
T
J
= 175°C
T
J
= 150°C
T
J
= 125°C
1K
T
J
= 85°C
100
T
J
= 25°C
10
1
1.5
1.0
0.5
0
−50 −25
0
25
50
75
100
125
150
175
5
15
25
35
45
55
65
75
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
www.onsemi.com
3
NVMFS6H858N
TYPICAL CHARACTERISTICS
C
ISS
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
1000
10
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
10
Q
G
, TOTAL GATE CHARGE (nC)
V
DS
= 40 V
T
J
= 25°C
I
D
= 10 A
Q
GS
Q
GD
C, CAPACITANCE (pF)
100
C
OSS
10
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
1
0
10
20
30
40
50
60
70
80
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
C
RSS
Figure 7. Capacitance Variation
100
t
d(off)
t
r
t, TIME (ns)
t
f
10
t
d(on)
I
S
, SOURCE CURRENT (A)
10
Figure 8. Gate−to−Source Voltage vs. Total
Charge
V
GS
= 0 V
1
V
GS
= 10 V
V
DS
= 64 V
I
D
= 10 A
1
1
10
R
G
, GATE RESISTANCE (W)
100
T
J
= 125°C
0.1
0.3
0.4
0.5
0.6
T
J
= 25°C
0.7
T
J
= −55°C
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
T
C
= 25°C
Single Pulse
V
GS
≤
10 V
100
Figure 10. Diode Forward Voltage vs. Current
I
D
, DRAIN CURRENT(A)
100
10
10
10
ms
I
PEAK
(A)
T
J(initial)
= 25°C
1
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
0.5 ms
1 ms
10 ms
1
T
J(initial)
= 100°C
0.1
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
0.1
1E−05
1E−04
1E−03
1E−02
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. I
PEAK
vs. Time in Avalanche
www.onsemi.com
4
NVMFS6H858N
TYPICAL CHARACTERISTICS
100
Duty Cycle = 0.5
10
R(t) (°C/W)
0.2
0.1
0.05
0.02
0.01
1
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
NVMFS6H858NT1G
NVMFS6H858NWFT1G
Marking
6H858N
858NWF
Package
DFN5
(Pb−Free)
DFN5
(Pb−Free, Wettable Flanks)
Shipping
†
1500 / Tape & Reel
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
