NVTFS6H888N
Power MOSFET
Features
80 V, 55 mW, 13 A, Single N−Channel
•
•
•
•
•
•
Small Footprint (3.3 x 3.3 mm) for Compact Design
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
NVTFS6H888NWF
−
Wettable Flanks Product
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
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V
(BR)DSS
80 V
Value
80
±20
12
8.3
Unit
V
V
A
R
DS(on)
MAX
55 mW @ 10 V
I
D
MAX
13 A
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJC
(Notes 1, 2, 3, 4)
Power Dissipation
R
qJC
(Notes 1, 2, 3)
Continuous Drain
Current R
qJA
(Notes 1, 3, 4)
Power Dissipation
R
qJA
(Notes 1, 3)
Pulsed Drain Current
T
C
= 25°C
Steady
State
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
T
L
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
N−Channel
D (5
−
8)
18
9.2
4.7
3.3
2.9
1.5
47
−55
to
+175
15
47
260
W
G (4)
S (1, 2, 3)
A
MARKING DIAGRAM
W
1
A
°C
A
mJ
°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (I
L(pk)
= 0.6 A)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
WDFN8
(m8FL)
CASE 511AB
1
S
S
S
G
XXXX
AYWWG
G
D
D
D
D
XXXX = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
(Note 1)
Parameter
Junction−to−Case
−
Steady State (Note 3)
Junction−to−Ambient
−
Steady State (Note 3)
Symbol
R
qJC
R
qJA
Value
8.2
51.5
Unit
°C/W
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2018
July, 2018
−
Rev. 0
1
Publication Order Number:
NVTFS6H888N/D
NVTFS6H888N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
(BR)DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, dl
S
/dt = 100 A/ms,
I
S
= 10 A
T
J
= 25°C
T
J
= 125°C
V
GS
= 10 V, V
DS
= 64 V,
I
D
= 10 A
V
GS
= 10 V, V
DS
= 40 V, I
D
= 10 A
V
GS
= 10 V, V
DS
= 40 V, I
D
= 10 A
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 40 V
V
GS
= 0 V, I
D
= 250
mA
V
GS
= 0 V,
V
DS
= 80 V
T
J
= 25°C
T
J
= 125°C
80
10
250
100
nA
V
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
V
DS
= 0 V, V
GS
= 20 V
V
GS
= V
DS
, I
D
= 15
mA
V
GS
= 10 V, I
D
= 5 A
V
DS
= 15 V, I
D
= 10 A
2.0
45.7
18.5
4.0
55
V
mW
S
220
35
3.0
1.0
1.7
0.9
4.7
pF
nC
nC
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
7.0
15
11
11
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
GS
= 0 V,
I
S
= 5 A
0.85
0.73
25
18
6.0
17
nC
ns
1.2
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
5. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NVTFS6H888N
TYPICAL CHARACTERISTICS
70
60
I
D
, DRAIN CURRENT (A)
50
40
30
20
10
0
0
1
2
3
4
5
6
7
5V
4V
8
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
6V
I
D
, DRAIN CURRENT (A)
70
60
50
40
30
20
10
0
T
J
= 125°C
0
1
2
3
4
T
J
=
−55°C
5
6
7
8
9
10
T
J
= 25°C
V
GS
= 10 V
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
80
70
60
50
40
30
80
Figure 2. Transfer Characteristics
T
J
= 25°C
I
D
= 5 A
T
J
= 25°C
70
60
50
40
30
V
GS
= 10 V
5
6
7
8
9
10
1
2
3
I
D
, DRAIN CURRENT (A)
4
5
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.5
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
2.0
1.5
1.0
0.5
0
−50 −25
V
GS
= 10 V
I
D
= 5 A
100K
10K
I
DSS
, LEAKAGE (nA)
1K
100
10
1
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
T
J
= 175°C
T
J
= 150°C
T
J
= 125°C
T
J
= 85°C
T
J
= 25°C
0
25
50
75
100
125
150
175
5
15
25
35
45
55
65
75
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NVTFS6H888N
TYPICAL CHARACTERISTICS
1000
C
ISS
C, CAPACITANCE (pF)
100
C
OSS
10
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
1
0
10
20
30
40
50
60
C
RSS
10
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
V
DS
= 40 V
T
J
= 25°C
I
D
= 10 A
5
6
Q
GS
Q
GD
70
80
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Q
G
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
100
I
S
, SOURCE CURRENT (A)
10
Figure 8. Gate−to−Source Voltage vs. Total
Charge
V
GS
= 0 V
t
f
t, TIME (ns)
t
r
t
d(off)
10
t
d(on)
1
1
V
GS
= 10 V
V
DS
= 64 V
I
D
= 10 A
1
10
R
G
, GATE RESISTANCE (W)
100
T
J
= 125°C
0.1
0.3
0.4
0.5
0.6
T
J
= 25°C
0.7
T
J
=
−55°C
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
T
C
= 25°C
Single Pulse
V
GS
≤
10 V
10
Figure 10. Diode Forward Voltage vs. Current
I
D
, DRAIN CURRENT(A)
100
T
J(initial)
= 25°C
I
PEAK
(A)
10
10
ms
1
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
0.5 ms
1 ms
10 ms
100
1000
1
T
J(initial)
= 100°C
0.1
0.1
1E−05
1E−04
1E−03
1E−02
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. I
PEAK
vs. Time in Avalanche
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4
NVTFS6H888N
TYPICAL CHARACTERISTICS
100
Duty Cycle = 0.5
10
R(t) (°C/W)
0.2
0.1
0.05
0.02
0.01
0.1
Single Pulse
1
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
NVTFS6H888NTAG
NVTFS6H888NWFTAG
Marking
888N
88NW
Package
WDFN8
(Pb−Free)
WDFN8
(Pb−Free, Wettable Flanks)
Shipping
†
1500 / Tape & Reel
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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