PZTA92
PNP Silicon High Voltage Transistor
High breakdown voltage
Low collector-emitter saturation voltage
Complementary type: PZTA42 (NPN)
Thermal Resistance
Junction - soldering point
1)
R
thJS
4
3
2
1
VPS05163
Type
PZTA92
Maximum Ratings
Parameter
Marking
PZTA 92
1=B
Pin Configuration
2=C
3=E
4=C
Package
SOT223
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Value
300
300
5
500
100
1.5
150
-65 ... 150
Unit
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Base current
Total power dissipation,
T
S
= 124 °C
Junction temperature
Storage temperature
mA
W
°C
17
K/W
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
Dec-12-2001
PZTA92
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 100 µA,
I
E
= 0
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector cutoff current
V
CB
= 200 V,
I
E
= 0
Collector cutoff current
V
CB
= 200 V,
I
E
= 0 ,
T
A
= 150 °C
Emitter cutoff current
V
EB
= 3 V,
I
C
= 0
DC current gain 1)
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
I
C
= 30 mA,
V
CE
= 10 V
Collector-emitter saturation voltage1)
I
C
= 20 mA,
I
B
= 2 mA
Base-emitter saturation voltage 1)
I
C
= 20 mA,
I
B
= 2 mA
AC Characteristics
V
BEsat
V
CEsat
h
FE
I
EBO
I
CBO
I
CBO
V
(BR)EBO
V
(BR)CBO
V
(BR)CEO
typ.
max.
Unit
300
300
5
-
-
-
-
-
-
-
-
-
-
-
-
250
20
100
V
nA
µA
nA
-
25
40
25
-
-
-
-
-
-
-
-
-
-
0.5
0.9
V
Transition frequency
I
C
= 20 mA,
V
CE
= 10 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 20 V,
f
= 1 MHz
f
T
C
cb
-
-
100
-
-
6
MHz
pF
1) Pulse test: t < 300 s; D < 2%
2
Dec-12-2001
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