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74AUP2G38GF,115

产品描述逻辑门 Low-Power dual 2-input NAND gate
产品类别逻辑    逻辑   
文件大小873KB,共21页
制造商Nexperia
官网地址https://www.nexperia.com
下载文档 详细参数 选型对比 全文预览

74AUP2G38GF,115概述

逻辑门 Low-Power dual 2-input NAND gate

74AUP2G38GF,115规格参数

参数名称属性值
Brand NameNexperia
厂商名称Nexperia
零件包装代码SON
包装说明VSON,
针数8
制造商包装代码SOT1089
Reach Compliance Codecompliant
Samacsys Description74AUP2G38 - Low-power dual 2-input NAND gate; open drain@en-us
系列AUP/ULP/V
JESD-30 代码R-PDSO-N8
JESD-609代码e3
长度1.35 mm
逻辑集成电路类型NAND GATE
湿度敏感等级1
功能数量2
输入次数2
端子数量8
最高工作温度125 °C
最低工作温度-40 °C
输出特性OPEN-DRAIN
封装主体材料PLASTIC/EPOXY
封装代码VSON
封装形状RECTANGULAR
封装形式SMALL OUTLINE, VERY THIN PROFILE
峰值回流温度(摄氏度)NOT SPECIFIED
传播延迟(tpd)24 ns
座面最大高度0.5 mm
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)0.8 V
标称供电电压 (Vsup)1.1 V
表面贴装YES
技术CMOS
温度等级AUTOMOTIVE
端子面层Tin (Sn)
端子形式NO LEAD
端子节距0.35 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度1 mm
Base Number Matches1

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74AUP2G38
Low-power dual 2-input NAND gate; open drain
Rev. 8 — 11 February 2013
Product data sheet
1. General description
The 74AUP2G38 provides the dual 2-input NAND gate with open-drain output. The output
of the device is an open drain and can be connected to other open-drain outputs to
implement active-LOW wired-OR or active-HIGH wired-AND functions.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire V
CC
range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
V
CC
range from 0.8 V to 3.6 V.
This device is fully specified for partial Power-down applications using I
OFF
. The I
OFF
circuitry disables the output, preventing a damaging backflow current through the device
when it is powered down.
2. Features and benefits
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
Complies with JEDEC standards:
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
ESD protection:
HBM JESD22-A114F Class 3A exceeds 5000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101E exceeds 1000 V
Low static power consumption; I
CC
= 0.9
A
(maximum)
Latch-up performance exceeds 100 mA per JESD78B Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of V
CC
I
OFF
circuitry provides partial Power-down mode operation
Multiple package options
Specified from
40 C
to +85
C
and
40 C
to +125
C

74AUP2G38GF,115相似产品对比

74AUP2G38GF,115 74AUP2G38GN,115 74AUP2G38GS,115 74AUP2G38GT,115
描述 逻辑门 Low-Power dual 2-input NAND gate 逻辑门 Low-Power dual 2-input NAND gate 逻辑门 NAND 4.6 V 20 mA 逻辑门 1.8V DUAL LP 2-INPT
Brand Name Nexperia Nexperia Nexperia Nexperia
厂商名称 Nexperia Nexperia Nexperia Nexperia
零件包装代码 SON SON SON SON
包装说明 VSON, SON, VSON, VSON,
针数 8 8 8 8
制造商包装代码 SOT1089 SOT1116 SOT1203 SOT833-1
Reach Compliance Code compliant compliant compliant compliant
Samacsys Description 74AUP2G38 - Low-power dual 2-input NAND gate; open drain@en-us 74AUP2G38 - Low-power dual 2-input NAND gate; open drain@en-us 74AUP2G38 - Low-power dual 2-input NAND gate; open drain@en-us 74AUP2G38 - Low-power dual 2-input NAND gate; open drain@en-us
系列 AUP/ULP/V AUP/ULP/V AUP/ULP/V AUP/ULP/V
JESD-30 代码 R-PDSO-N8 R-PDSO-N8 R-PDSO-N8 R-PDSO-N8
JESD-609代码 e3 e3 e3 e3
长度 1.35 mm 1.2 mm 1.35 mm 1.95 mm
逻辑集成电路类型 NAND GATE NAND GATE NAND GATE NAND GATE
湿度敏感等级 1 1 1 1
功能数量 2 2 2 2
输入次数 2 2 2 2
端子数量 8 8 8 8
最高工作温度 125 °C 125 °C 125 °C 125 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C
输出特性 OPEN-DRAIN OPEN-DRAIN OPEN-DRAIN OPEN-DRAIN
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 VSON SON VSON VSON
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, VERY THIN PROFILE SMALL OUTLINE SMALL OUTLINE, VERY THIN PROFILE SMALL OUTLINE, VERY THIN PROFILE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED 260
传播延迟(tpd) 24 ns 24 ns 24 ns 24 ns
座面最大高度 0.5 mm 0.35 mm 0.35 mm 0.5 mm
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 0.8 V 0.8 V 0.8 V 0.8 V
标称供电电压 (Vsup) 1.1 V 1.1 V 1.1 V 1.2 V
表面贴装 YES YES YES YES
技术 CMOS CMOS CMOS CMOS
温度等级 AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE
端子面层 Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
端子形式 NO LEAD NO LEAD NO LEAD NO LEAD
端子节距 0.35 mm 0.3 mm 0.35 mm 0.5 mm
端子位置 DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED 30
宽度 1 mm 1 mm 1 mm 1 mm
Base Number Matches 1 1 1 1

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