电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

1N5399

产品描述1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15
产品类别半导体    分立半导体   
文件大小98KB,共2页
制造商Bytes
下载文档 详细参数 选型对比 全文预览

1N5399在线购买

供应商 器件名称 价格 最低购买 库存  
1N5399 - - 点击查看 点击购买

1N5399概述

1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15

1N5399规格参数

参数名称属性值
端子数量2
元件数量1
状态ACTIVE
包装形状ROUND
包装尺寸LONG FORM
端子形式WIRE
端子涂层TIN LEAD
端子位置AXIAL
包装材料PLASTIC/EPOXY
结构SINGLE
壳体连接ISOLATED
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
应用GENERAL PURPOSE
相数1
反向恢复时间最大2 us
最大重复峰值反向电压1000 V
最大平均正向电流1.5 A
最大非重复峰值正向电流50 A

文档预览

下载PDF文档
1N5391
1.5 AMP SILICON RECTIFIERS
THRU
1N5399
VOLTAGE RANGE
50 to 1000 Volts
CURRENT
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
1.5 Amperes
DO-15
.140(3.6)
.104(2.6)
DIA.
1.0(25.4)
MIN.
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 0.40 grams
.300(7.6)
.230(5.8)
.034(.9)
.028(.7)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=50 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 1.5A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Ta=100 C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance R
θ
JA (Note 2)
Operating and Storage Temperature Range T
J
, T
STG
NOTES:
1N5391
1N5392 1N5393 1N5395
1N5397 1N5398 1N5399
UNITS
50
35
50
100
70
100
200
140
200
400
280
400
1.5
50
1.0
5.0
50
20
50
-65
+150
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
µA
µA
pF
C/W
C
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance from Junction to Ambient .375" (9.5mm) lead length.
116

1N5399相似产品对比

1N5399 1N5391 1N5392 1N5393 1N5395 1N5397 1N5398
描述 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 50 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-41 RECTIFIER DIODE, DO-15 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-41 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-204AL

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2247  2296  2657  726  1711  46  47  54  15  35 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved