...........................................................................................................-0.6V to V
CC
+1.0V
Storage temperature ...............................................................................................................................-65°C to +150°C
Ambient temperature under bias............................................................................................................... -40°C to +85°C
ESD protection on all pins.......................................................................................................................................... 4 kV
† NOTICE:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
TABLE 1-1:
DC CHARACTERISTICS
Electrical Characteristics:
Industrial (I):
T
A
= -40°C to +85°C
Characteristic
High-Level Input Voltage
Low-Level Input Voltage
Low-Level Output Voltage
High-Level Output Voltage
Input Leakage Current
Output Leakage Current
Pin Capacitance
(all inputs and outputs)
Oscillator Pin Capacitance
(X1, X2 pins)
EEPROM Operating Current
Min.
0.7 V
CC
-0.3
-0.3
—
—
V
CC
- 0.5
—
—
—
—
—
—
SRAM/RTCC Operating
Current
Vcc Data Retention Current
(oscillator off)
—
—
—
Typ.
(2)
—
—
—
—
—
—
—
—
—
3
—
—
—
—
—
Max.
V
CC
+ 1
0.3V
CC
0.2V
CC
0.4
0.2
—
±1
±1
7
—
3
5
3
3
1
V
µA
µA
pF
pF
mA
mA
mA
mA
µA
V
Units
V
V
V
CC
≥2.5V
V
CC
< 2.5V
I
OL
= 2.1 mA, V
CC
≥2.5V
I
OL
= 1.0 mA, V
CC
< 2.5V
I
OH
= -400 µA
CS = V
CC
, V
IN
= V
SS
or
V
CC
CS = V
CC
, V
OUT
= V
SS
or
V
CC
V
CC
= 3.6V
(Note
1)
T
A
= 25°C, f = 1 MHz
Note 1
V
CC
= 3.6V, F
CLK
= 5 MHz
SO = Open
V
CC
= 3.6V
V
CC
= 3.6V, F
CLK
= 5 MHz
SO = Open
V
CC
= 3.6V, F
CLK
= 5 MHz
V
CC
= 3.6V
V
CC
= 1.8V to 3.6V
Test Conditions
DC CHARACTERISTICS
Param.
No.
D1
D2
D3
D4
D5
D6
D7
D8
D9
Symbol
V
IH
V
IL
V
OL
V
OH
I
LI
I
LO
C
INT
C
OSC
I
CCEERD
I
CCEEWR
D10
I
CCREAD
I
CCWRITE
D11
I
CCDAT
Note 1:
This parameter is not tested but ensured by characterization.
2:
Typical measurements taken at room temperature.
2012-2018 Microchip Technology Inc.
DS20002300C-page 4
MCP7951X/MCP7952X
DC CHARACTERISTICS (Continued)
Param.
No.
D12
Symbol
I
CCT
Characteristic
Timekeeping Current
Electrical Characteristics:
Industrial (I):
T
A
= -40°C to +85°C
Min.
—
Typ.
(2)
—
Max.
1.2
Units
µA
V
CC
= 1.8V to 3.6V
Test Conditions
V
CC
= 1.8V, CS = V
CC
,
(Note
1)
V
CC
= 3.0V, CS = V
CC
,
(Note
1)
V
CC
= 3.6V, CS = V
CC
,
(Note
1)
—
—
D13
D14
D15
V
TRIP
V
BAT
I
BATT
Power-Fail Switchover
Voltage
Backup Supply Voltage
Range
Timekeeping Backup Current
1.3
1.3
—
—
—
D16
I
BATDAT
V
BAT
Data Retention Current
(oscillator off)
—
1.2
—
1.5
—
—
1000
—
—
1.8
2.6
1.7
3.6
850
1200
2300
850
µA
µA
V
V
nA
nA
nA
nA
V
BAT
= 1.3V, V
CC
= V
SS
(Note
1)
V
BAT
= 3.0V, V
CC
= V
SS
(Note
1)
V
BAT
= 3.6V, V
CC
= V
SS
(Note
1)
V
BAT
= 3.6V, V
CC
= V
SS
Note 1:
This parameter is not tested but ensured by characterization.
据外媒报道，萨里大学（University of Surrey）的研究人员开发出一种无需依赖GPS即可在人口密集的城市地区精确定位设备位置的人工智能系统。该系统可将定位误差从734米缩小到22米以内，这对于自动驾驶汽车和救援车辆等技术的发展意义重大。 图片来源： 萨里大学 在发表于《IEEE Robotics and Automation Letters》的论文中，研究人员介绍了PEn...[详细]
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