d. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal of PowerPAK SO-8L is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S16-1461-Rev. A, 19-Jul-16
Document Number: 67407
1
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJ403BEEP
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
GS(th)
I
GSS
TEST CONDITIONS
V
GS
= 0 V, I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
DS
= -30 V
V
DS
= -30 V, T
J
= 125 °C
V
DS
= -30 V, T
J
= 175 °C
V
DS
-5 V
I
D
= -10 A
I
D
= -10 A, T
J
= 125 °C
I
D
= -10 A, T
J
= 175 °C
I
D
= -7 A
V
GS
= 0 V
V
GS
= 0 V
V
GS
= -10 V
V
GS
= -10 V
V
GS
= -10 V
V
GS
= -10 V
V
GS
= -4.5 V
MIN.
-30
-1.5
-
-
-
-
-
-30
-
-
-
-
-
-
-
V
GS
= -10 V
V
DS
= -15 V, I
D
= -10 A
f = 1 MHz
V
DD
= -15 V, R
L
= 1.5
I
D
-10 A, V
GEN
= -10 V, R
g
= 1
-
-
2
-
-
-
-
-
I
F
= -3 A, V
GS
= 0 V
-
TYP.
-
-2.0
-
-
-
-
-
-
0.0070
-
-
0.0120
32
712
75
9.5
19
4.3
38
82
134
178
-
-0.75
MAX.
-
-2.5
±2
±1
-1
-50
-250
-
0.0085
0.0130
0.0150
0.0200
-
890
164
-
-
7.5
57
123
201
214
-84
-1.2
A
V
ns
k
nC
S
pF
A
μA
UNIT
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
V
μA
mA
Zero Gate Voltage Drain Current
On-State Drain
Current
a
I
DSS
I
D(on)
Drain-Source On-State Resistance
a
R
DS(on)
Forward
Transconductance
b
g
fs
C
oss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
V
DS
= -10 V, I
D
= -10 A
V
GS
= 0 V
V
DS
= -15 V, f = 1 MHz
Dynamic
b
Output Capacitance
Total Gate Charge
c
Gate-Source
Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
Time
c
Source-Drain Diode Ratings and Characteristics
b
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-1461-Rev. A, 19-Jul-16
Document Number: 67407
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJ403BEEP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.005
Vishay Siliconix
10
-2
10
-3
0.004
I
GSS
-
Gate
Current (A)
T
J
= 25 °C
I
GSS
-
Gate
Current (A)
10
-4
10
-5
10
-6
10
-7
T
J
= 25
°C
0.003
T
J
= 150
°C
0.002
10
-8
10
-9
0.001
0.000
0
7
14
21
28
35
V
GS
-
Gate-to-Source
Voltage (V)
10
-10
0
6
12
18
24
V
GS
-
Gate-to-Source
Voltage (V)
30
Gate Current vs. Gate-Source Voltage
80
V
GS
= 10 V thru 4 V
40
60
I
D
- Drain Current (A)
V
GS
= 3 V
I
D
- Drain Current (A)
30
50
Gate Current vs. Gate-Source Voltage
40
20
T
C
= 25
°C
20
10
T
C
= 125
°C
0
0
2
4
6
8
V
DS
- Drain-to-Source Voltage (V)
10
0
0
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
5
T
C
= -55 °C
Output Characteristics
0.025
3000
Transfer Characteristics
0.020
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
V
GS
= 4.5 V
0.015
2400
1800
0.010
V
GS
= 10 V
0.005
1200
C
oss
600
0
0
15
30
I
D
- Drain Current (A)
45
60
0
0
5
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
30
On-Resistance vs. Drain Current
S16-1461-Rev. A, 19-Jul-16
Capacitance
Document Number: 67407
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJ403BEEP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
R
DS(on)
- On-Resistance (Normalized)
I
D
= 10 A
V
GS
-
Gate-to-Source
Voltage (V)
8
V
DS
= 10 V
6
2.0
I
D
= 10 A
1.7
V
GS
= 10 V
1.4
V
GS
= 4.5 V
1.1
Vishay Siliconix
4
2
0.8
0
0
20
40
60
80
100
Q
g
- Total
Gate
Charge (nC)
0.5
-50
-25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Gate Charge
100
0.10
On-Resistance vs. Junction Temperature
10
I
S
-
Source
Current (A)
T
J
= 150
°C
1
T
J
= 25
°C
0.1
R
DS(on)
- On-Resistance (Ω)
0.08
0.06
0.04
0.01
0.02
T
J
= 150
°C
0
T
J
= 25
°C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
Source Drain Diode Forward Voltage
1.0
-28
On-Resistance vs. Gate-to-Source Voltage
V
DS
- Drain-to-Source Voltage (V)
0.7
I
D
= 250 μA
V
GS(th)
Variance (V)
0.4
I
D
= 5 mA
0.1
-30
I
D
= 1 mA
-32
-34
-0.2
-36
-0.5
-50
-25
0
25
50
75
100
125
150
175
-38
-50
-25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
T
J
- Junction Temperature (°C)
Threshold Voltage
S16-1461-Rev. A, 19-Jul-16
Drain Source Breakdown vs. Junction Temperature
Document Number: 67407
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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