TAT7467E1F
CATV 75
pHEMT Dual RF Amplifier
Product Description
The TAT7467E1F is a 75 , fully integrated, single-die
differential RF Amplifier covering medium power
applications in the CATV band. The TAT7467E1F includes
on-chip linearization to improve 3
rd
order distortion
performance while maintaining low power consumption on
a +5 V supply. It is fabricated using 6 inch GaAs pHEMT
technology to optimize performance and cost.
SOIC-8 Package
Product Features
•
50–1218 MHz Bandwidth
•
75
Impedance
•
pHEMT Device Technology
•
Meets DOCSIS 3.1 Output Requirements
•
+5 V Supply Voltage
•
380 mA Current Consumption
•
On-chip Linearization
•
SOIC-8 package
Functional Block Diagram
Applications
•
Replacement for +5 V SOIC-8 Amplifiers
•
Edge QAM Output Stage
•
MDU Output
•
Distribution Amplifiers
•
Transmitter Driver Amplifier
Pin Configuration
Pin No.
1
2
3
4
5
6
7
8
Backside Pad
Label
RF
IN
A
LIN A
LIN B
RF
IN
B
RF
OUT
B / V
DD
Bias 2
Bias 1
RF
OUT
A / V
DD
RF/DC GND
Ordering Information
Part No.
TAT7467E1F
TAT7467E1F–EB
Description
75 Dual pHEMT Amplifier
Amplifier Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel
Data Sheet-Rev E, June 5, 2017 | Subject to change without notice
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TAT7467E1F
CATV 75
Absolute Maximum Ratings
Parameter
Supply Voltage (V
DD
)
Storage Temperature
Operating Temperature
pHEMT Dual RF Amplifier
Recommended Operating Conditions
Parameter
V
DD
I
DD
(Total EVB current)
Tj for >10
6
hours MTTF
Rating
+10 V
−60 to +150 °
C
−40 to +85 °
C
Min
Typ
+5.0
380
Max
Units
V
mA
°
C
+145
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Electrical performance is measured under conditions noted in
the electrical specifications table. Specifications are not
guaranteed over all recommended operating conditions.
Electrical Specifications
Parameter
Operational Frequency Range
Gain
Gain Flatness
Noise Figure
Input Return Loss
Output Return Loss
EQAM Output Out-of-band
Spurious and Noise for single
channel on a single port
P1dB
OIP3
Equivalent Harmonics
V
DD
I
DD
(Total current of Test Circuit)
Bias 2 (Vset range to adjust I
DD
)
Thermal Resistance
θ
jc
(jct. to case)
Peak deviation from straight line across full
band.
Conditions
Min
50
Typ
18
±0.75
4.7
15
16
Max
1218
Units
MHz
dB
dB
dB
dB
dB
V
OUT
= 62 dBmV / ch adjacent,
See Notes 2, 3, and 4
P
OUT
=+12 dBm / tone, f=10 MHz
See Note 5
See Note 7
4
14.5
+25
+43
−62
dBc
dBm
dBm
dBc
V
mA
V
°
C/W
-63
+5
380
5
Notes:
1. Test conditions unless otherwise noted: 75 impedance, V
DD
= +5 V, I
DD
= 380 mA fixed by Vset
7
from +4 V to +4.7 V, T
A
= +25°C
2. Production tested at 66 MHz, 330 MHz, and 990 MHz.
3. Adjacent channel 1 (750 kHz from channel block edge to 6 MHz from channel block edge).
4. Adjacent channel 2 (6 MHz from channel block edge to 12 MHz from channel block edge).
5. Spurious and noise levels in channels coinciding with 2
nd
harmonic or 3
rd
harmonic.
6. Recommended application circuit uses active bias described on page 6.
7. Test Circuit, page 3, can be used for evaluation with some variation in I
DD
when Vset is a fixed voltage between +4 to +4.7 V adjusted by R21.
Variation to I
DD
may change some performance parameters.
Data Sheet-Rev E, June 5, 2017 | Subject to change without notice
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TAT7467E1F
CATV 75
Bill of Material–TAT7467E1F
Reference Designator Description
PAD
BLOCK
U1
PCB
C1, C2
C18, C19
C5, C6, C7, C13, C14, C17
C3, C4, C10, C15, C16
R12, R13
R22, R23
R14
R15
R21
L4
L5
L1
L2, L3
B1, B2
T1, T2
J3
J1, J2
S1, S2, S3, S4, S5, S6
C8, C9, C21
Sil Pad for Heatsink
HEATSINK
TAT7467E1F
TAT7467E1F Application Board
CAP, 0402, 0.1uF, 10%, 10V
CAP, 0402, 270 pF, 10%, 50V
CAP, 0402, 0.01uF, 10%, 16V, XR7
CAP, 0402, 0.5pF +/-0.25pF, 50V
RES, 0402, 1.21K , 1%, 1/16W
RES, 0402, 1.5 , 1%, 1/16W
RES, 0402, 750 , 1%, 1/16W
RES, 1206, 1 , 5%
RES, 1206, 12 , 5%, 1/4W
IND, 0402, 5.6nH, 5%, W/W
IND, 0402, 2.7nH, 5%, W/W
IND, 1008, 0.9uH, 10%, 1.3A, Ferrite
Qorvo
Panasonic Corp of North America ECJ-0EB1A104K
Panasonic Corp of North America ECJ-0EB1H271K
Panasonic Corp of North America ECJ-0EB1C103K
Murata
GRM1555C1HR50CZ01D
Panasonic Corp of North America ERJ-2RKF1211X
Yaego
RC0402FR-071R5L
VISHAY-DALE
CRCW0402750RFKED
Panasonic Corp of North America ERJ-8GEYJ1R0V
Panasonic Corp of North America ERJ-8GEYJ120V
Coilcraft, Inc.
Coilcraft, Inc.
0402CS-5N6XJLW
0402CS-2N7XJLW
1008AF-901XKL
LQH31HNR50K03
BLM15AG601SN1D
TC1-33-75G2+
022-28-8021
LTI-FSF55MGT-P-10A-X7
90403A106
Dummy Part
pHEMT Dual RF Amplifier
Manufacturer
various
Part Number
Coilcraft, Inc.
IND, 1206, 500nH, 10%, 260mA, Ferrite Murata
Bead, Chip Ferrite, 0402, 600 , 300mA Murata
XFMR, SMT, 75 , CD542, 1:1
Header Pin, 2 POS, 0.1”, RA, SMT
Conn, 75 , Edge Launch F
Screw, 4-40, ¼”, Phillips, Pan HD,
SEMS
Not Populated Item
Mini-Circuits
Molex
Lighthorse Technologies
McMaster-Carr Supply Company
Data Sheet-Rev E, June 5, 2017 | Subject to change without notice
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