SK82C - SK810C
Taiwan Semiconductor
8A, 20V - 100V Surface Mount Schottky Barrier Rectifier
FEATURES
●
●
●
●
●
Low power loss, high efficiency
Ideal for automated placement
Guard ring for over-voltage protection
High surge current capability
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
Package
Configuration
VALUE
8
20 - 100
150
UNIT
A
V
A
DO-214AB (SMC)
Single die
APPLICATIONS
●
●
●
●
Switching mode power supply (SMPS)
Adapters
Lighting application
Converter
MECHANICAL DATA
●
●
●
●
Case: DO-214AB (SMC)
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
● Moisture sensitivity level: level 1, per J-STD-020
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 0.21 g (approximately)
DO-214AB (SMC)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3
ms single half sine-wave
superimposed on rated load per
diode
Critical rate of rise of off-state
voltage
Junction temperature
Storage temperature
V
RRM
V
R(RMS)
V
DC
I
F(AV)
I
FSM
dV/dt
T
J
T
STG
1
- 55 to +125
- 55 to +150
SYMBOL
SK
82C
SK
82C
20
14
20
SK
83C
SK
83C
30
21
30
SK
84C
SK
84C
40
28
40
8
150
SK
85C
SK
85C
50
35
50
SK
86C
SK
86C
60
42
60
SK
810C
SK
810C
100
70
100
UNIT
V
V
V
A
A
V/μs
10,000
- 55 to +150
°C
°C
Version:J1708
SK82C - SK810C
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance per diode
SYMBOL
R
ӨJA
LIMIT
20
UNIT
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
SK82C
SK83C
SK84C
SK85C
SK86C
SK810C
(2)
CONDITIONS
SYMBOL
TYP.
-
MAX.
0.55
0.75
0.90
0.5
15
UNIT
V
V
V
mA
mA
Forward voltage per diode
(1)
I
F
= 8A, T
J
= 25°C
V
F
-
-
Reverse current @ rated V
R
per diode
T
J
= 25°C
I
R
-
-
Reverse current @ rated V
R
(2)
per diode
SK82C
SK83C
SK84C
SK85C
SK86C
SK810C
T
J
= 100°C
I
R
-
10
mA
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
2
Version:J1708
SK82C - SK810C
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
10
AVERAGE FORWARD CURRENT (A)
SK85C - SK810C
8
1000
SK82C - SK84C
JUNCTION CAPACITSUCE (pF)
Fig.2 Typical Junction Capacitance
6
SK82C- SK84C
100
SK85C - SK86C
4
2
RESISTIVEOR
INDUCTIVE LOAD
0
0
25
50
75
100
125
150
LEAD TEMPERATURE (
°
C)
SK810C
f=1.0MHZ
Vsig=50mvp-p
0.1
1
10
100
10
REVERSE VOLTAGE (V)
Fig.3 Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (mA)
INSTANTANEOUS FORWARD CURRENT (A)
100
T
J
=125
°
C
10
1
0.1
100 10
Fig.4 Typical Forward Characteristics
1
10
0.1
UF1DLW
SK84C
SK82C -
T
J
=125°C
T
J
=75
°
C
T
J
=25°C
SK85C - SK86C
T
J
=25
°
C
0.01
0.001
0.0001
0
20
40
60
80
SK82C - SK84C
SK85C - SK810C
100
120
140
1
0.01
SK810C
Pulse width
0.001
0.1
0
0.3
0.4
0.2
0.5
0.4
0.6
0.7
0.6
Pulse width 300μs
1%
0.9
0.8
duty cycle
1
1.1
0.8
1
1.2
1.2
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
4
Version:J1708
SK82C - SK810C
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.5 Maximum Non-repetitive Forward Surge Current
240
8.3ms Single Half Sine Wave
TRANSIENT THERMAL IMPEDANCE(℃/ W)
PEAK FORWARD SURGE CURRENT (A)
Fig.6 Typical Transient Thermal Characteristics
100
180
10
120
1
60
1
10
NUMBER OF CYCLES AT 60 HZ
100
0.1
0.01
0.1
1
10
100
PULSE DURATION. (sec)
5
Version:J1708
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