4
1N5400G-K - 1N5408G-K
Taiwan Semiconductor
3A, 50V - 1000V Glass Passivated Rectifier
FEATURES
●
●
●
●
●
●
Glass passivated chip junction
High current capability, Low V
F
High reliability
High surge current capability
Low power loss, high efficiency
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
Configuration
VALUE
3
50 - 1000
125
150
DO-201AD
Single Die
UNIT
A
V
A
°C
APPLICATIONS
● High frequency rectification
● Freewheeling application
● Switching mode converters and inverters in computer and
telecommunication.
MECHANICAL DATA
● Case: DO-201AD
● Molding compound meets UL 94V-0 flammability rating
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Pure tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Polarity: As marked
● Weight: 1.2 g (approximately)
DO-201AD
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse
voltage
Reverse voltage, total rms
value
Maximum DC blocking
voltage
Forward current
Surge peak forward current,
8.3 ms single half sine-wave
superimposed on rated load
per diode
Junction temperature
Storage temperature
SYMBOL
1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408
UNIT
G-K
G-K
G-K
G-K
G-K
G-K
G-K
1N5400G 1N5401G 1N5402G 1N5404G 1N5406G 1N5407G 1N5408G
V
RRM
V
R(RMS)
V
DC
I
F(AV)
I
FSM
T
J
T
STG
50
35
50
100
70
100
200
140
200
400
280
400
3
125
- 55 to +150
- 55 to +150
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
°C
°C
1
Version:B1705
4
1N5400G-K - 1N5408G-K
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
Junction-to-case thermal resistance
SYMBOL
R
ӨJA
R
ӨJC
LIMIT
45
15
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
1N5400G-K
1N5401G-K
1N5402G-K
Forward voltage per diode
(1)
CONDITIONS
SYMBOL
TYP
-
MAX
1.1
UNIT
V
1N5404G-K
1N5406G-K
1N5407G-K
1N5408G-K
I
F
= 3A,T
J
= 25°C
V
F
-
1.0
V
Reverse current @ rated V
R
per diode
Junction capacitance
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
(2)
T
J
= 25°C
T
J
= 125°C
1 MHz, V
R
=4.0V
-
I
R
C
J
-
25
5
100
-
µA
µA
pF
ORDERING INFORMATION
PART NO.
PACKING CODE
A0
1N540xG-K
(Note 1, 2)
R0
B0
Notes:
1. "x" defines voltage from 50V (1N5400G-K) to 1000V (1N5408G-K)
2. Whole series with green compound (halogen-free)
G
PACKING CODE
SUFFIX
PACKAGE
DO-201AD
DO-201AD
DO-201AD
PACKING
500 / Ammo box
1,250 / 13" Paper reel
500 / Bulk packing
EXAMPLE P/N
EXAMPLE P/N
1N5400G-K A0G
PART NO.
1N5400G-K
PACKING CODE
A0
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
2
Version:B1705
4
1N5400G-K - 1N5408G-K
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
4
AVERAGE FORWARD CURRENT (A)
Fig.2 Typical Junction Capacitance
1000
f=1.0MHz
Vslg=50mVp-p
CAPACITANCE (pF)
3
2
100
1
0
0
25
50
75
100
125
150
10
1
10
REVERSE VOLTAGE (V)
100
AMBIENT TEMPERATURE(
o
C)
Fig.3 Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (μA)
INSTANTANEOUS FORWARD CURRENT (A)
100
100 10
Fig.4 Typical Forward Characteristics
10
10 1
UF1DLW
1N5402G-K - 1N5408G-K
T
J
=125°C
1
T
J
=125°C
0.1
T
J
=75°C
0.01
T
J
=25°C
0.001
0
20
40
60
80
100
120
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
0.01
0.1
0.001
0.01
0.3
0.6
0.4
0.7
0.5
0.8
0.6
0.9
1N5400G-K - 1N5401G-K
Pulse width
0.7
1
0.8
0.9
1.1
1
1.2
1.1
1.3
1.2
FORWARD VOLTAGE (V)
3
Version:B1705
(A)
0.1
1
T
J
=25°C
4
1N5400G-K - 1N5408G-K
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.5 Maximum Non-repetitive Forward Surge Current
250
PEAK FORWARD SURGE CURRENT(A)
200
150
100
50
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
4
Version:B1705
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