RM914
Power Amplifier Module for AMPS Applications (824–849 MHz)
The RM914 Advanced Mobile Phone Service (AMPS) Power Amplifier is a fully
matched 6-pin surface mount module designed for mobile units operating in the
824-849 MHz cellular bandwidth. This device can be driven to power output levels
beyond 31 dBm for high efficiency FM mode operation. A single GaAs Microwave
Monolithic Integrated Circuit (MMIC) contains all active circuitry in the module. The
MMIC contains on-board bias circuitry as well as input and interstage matching
circuits. The output match is realized off-chip and within the module package to
optimize efficiency and power performance into a 50
Ω
load. This device is
manufactured with Skyworks’s GaAs HBT process that provides for all positive
voltage DC supply operation while maintaining high efficiency. Primary bias to the
RM914 can be supplied directly from a three cell nickel-cadmium, single cell
lithium-ion, or other suitable battery with output in the 3-4 volt range. Power down is
accomplished by setting the voltage on the low current reference pin to zero volts. No
external supply side switch is needed as typical “off” leakage is a few microamperes
with full primary voltage supplied from the battery.
Distinguishing Features
•
•
•
•
•
Low voltage positive bias supply
(3 to 4 Volts, typical)
High efficiency
Large dynamic range
6-pin package
(6mm x 6mm x 1.5 mm)
Power down control
Applications
•
•
Analog cellular (AMPS)
Wireless local loop (WLL)
Functional Block Diagram
VREF
(3)
VCC1
(1)
VCC2
(4)
Driver
Stage Bias
Power
Stage Bias
RF
Input
(2)
Input
Match
DA
Inter
Stage
Match
PA
Output
Match
RF
Output
(5)
MMIC
MODULE
(6, 7)
GND
(6, 7)
GND
Data Sheet
© 2001, 2002 Skyworks Solutions, Inc., All Rights Reserved.
100637D
March 22, 2002
Electrical Specifications
RM914
Power Amplifier Module for AMPS Applications (824–849 MHz)
Electrical Specifications
The following tables list the electrical characteristics of the RM914 Power Amplifier.
Table 1
lists
the absolute maximum rating for continuous operation.
Table 2
lists the recommended operating
conditions for achieving the electrical performance listed in
Table 3. Table 3
lists the electrical
performance of the RM914 Power Amplifier over the recommended operating conditions.
Table 1. Absolute Maximum Ratings
(1)
Parameter
RF Input Power
Supply Voltage
Reference Voltage
Case Operating Temperature
Storage Temperature
NOTE(S):
Symbol
Pin
Vcc
Vref
Tc
Tstg
Minimum
—
—
—
–30
–55
Nominal
3.0
3.4
3.0
25
—
Maximum
6.0
6.0
3.3
+110
+125
Unit
dBm
Volts
Volts
°C
°C
No damage assuming only one parameter is set at limit at a time with all other parameters set at or below
nominal value.
Table 2. Recommended Operating Conditions
Parameter
Supply Voltage
Reference Voltage
Operating Frequency
Operating Temperature
Symbol
Vcc
Vref
Fo
To
Minimum
3.2
2.9
824.0
–30
Nominal
3.4
3.0
836.5
+25
Maximum
4.2
3.1
849.0
+85
Unit
Volts
Volts
MHz
°C
2
Skyworks
100637D
March 22, 2002
RM914
Power Amplifier Module for AMPS Applications (824–849 MHz)
Table 3. Electrical Specifications for AMPS Nominal Operating Conditions
(1)
Characteristics
Quiescent current
Leakage Current
Gain
Power Added Efficiency
Harmonic Suppression
Second
Third
Noise Power in RX Band
869-894 MHz
Noise Figure
Input Voltage Standing Wave Ratio
Stability (Spurious output)
Ruggedness – No damage
NOTE(S):
(1)
Electrical Specifications
Condition
Vref = 3.0
Vref = 2.9
Vref = 0 V
Vcc = 3.4 V
Po = 0 dBm
Po = 31 dBm
Po = 31 dBm
Po
≤
31 dBm
Po
≤
31 dBm
Po
≤
31 dBm
—
—
5:1 VSWR
All phases
Po
≤
31 dBm
Symbol
Iq
Iq
I
LK
G
Gp
PAEa
Minimum
60.0
—
—
—
29.0
48.5
Typical
100.0
80.0
—
32.5
31.0
51.0
Maximum
130.0
—
5.0
—
33.0
—
Unit
mA
mA
µA
dB
dB
%
AFo2
AFo3
RxBN
NF
VSWR
S
Ru
—
—
—
—
—
—
10:1
–43.0
–41.0
–136.0
7.0
1.4:1
—
—
–36.0
–34.0
–133.0
—
1.5:1
–60.0
—
dBc
dBc
dBm/Hz
dB
—
dBc
VSWR
Vcc = +3.4 V, Vref = +3.0 V, Freq = 836.5 MHz, Tc = 25 °C, unless otherwise specified.
Table 4. Electrical Specifications Limits for AMPS Recommended Operating Conditions
(1)
Characteristics
Quiescent current
Gain
Power Added Efficiency
Harmonic Suppression
Second
Third
Noise Power in RX Band
869-894 MHz
Input Voltage Standing Wave Ratio
Stability (Spurious output)
Ruggedness – No damage
NOTE(S):
(1)
Condition
Vref = 3.0
Vref = 2.9
Po = 31 dBm
Po = 31 dBm
Po
≤
31 dBm
Po
≤
31 dBm
Po
≤
31 dBm
—
5:1 VSWR
All phases
Po
≤
31 dBm
Symbol
Iq
Iq
Gp
PAEa
Minimum
—
—
25.0
48.0
Maximum
170.0
150.0
35.5
—
Unit
mA
mA
dB
%
AFo2
AFo3
RxBN
VSWR
S
Ru
—
—
—
—
—
10:1
–35.0
–30.0
–130.0
2:1
–60.0
—
dBc
dBc
dBm/Hz
—
dBc
VSWR
Per Table 2
100637D
March 22, 2002
Skyworks
3
Characterization Data
RM914
Power Amplifier Module for AMPS Applications (824–849 MHz)
Characterization Data
The following charts illustrate the characteristics of a typical RM914 Power Amplifier tested in the
evaluation board described in the following section. The amplifier was selected by characterizing a
group of devices and choosing a part with average electrical performance at both nominal and
worst case (limit) conditions.
Figures 1
through
2
illustrate the analog characteristics of the
RM914.
Figure 1. Analog Gain vs. Output Power
Vref = 3.0V, Vcc = 3.4V
35.00
32.50
Gain (dB)
30.00
27.50
25.00
0.00
5.00
10.00
15.00
20.00
Output Pow er (dBm )
25.00
30.00
Legend
824 MHz @ –30
°C
837 MHz @ –30
°C
849 MHz @ –30
°C
824 MHz @ +25
°C
837 MHz @ +25
°C
849 MHz @ +25
°C
824 MHz @ +85
°C
837 MHz @ +85
°C
849 MHz @ +85
°C
4
Skyworks
100637D
March 22, 2002
RM914
Power Amplifier Module for AMPS Applications (824–849 MHz)
Figure 2. Analog Power Added Efficiency vs. Output Power
Characterization Data
Vref = 3.0V, Vcc = 3.4V
60.00
50.00
40.00
PAE (%)
30.00
20.00
10.00
0.00
0.00
5.00
10.00
15.00
20.00
25.00
30.00
Output Power (dBm)
Figure 3. Analog Second Order Harmonic Suppression Magnitude
Vref = 3.0V, Vcc = 3.4V
70.00
60.00
50.00
40.00
30.00
20.00
10.00
0.00
10.00
| AFo2 (dBc) |
15.00
20.00
25.00
30.00
Output Power (dBm)
Legend
824 MHz @ –30
°C
837 MHz @ –30
°C
849 MHz @ –30
°C
824 MHz @ +25
°C
837 MHz @ +25
°C
849 MHz @ +25
°C
824 MHz @ +85
°C
837 MHz @ +85
°C
849 MHz @ +85
°C
100637D
March 22, 2002
Skyworks
5
FPGA/CPLD
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