MCP6V01/2/3
300 µA, Auto-Zeroed Op Amps
Features
• High DC Precision:
- V
OS
Drift: ±50 nV/°C (maximum)
- V
OS
: ±2 µV (maximum)
- A
OL
: 130 dB (minimum)
- PSRR: 130 dB (minimum)
- CMRR: 130 dB (minimum)
- E
ni
: 2.5 µV
P-P
(typical), f = 0.1 Hz to 10 Hz
- E
ni
: 0.79 µVp-p (typical), f = 0.01 Hz to 1 Hz
• Low Power and Supply Voltages:
- I
Q
: 300 µA/amplifier (typical)
- Wide Supply Voltage Range: 1.8V to 5.5V
• Easy to Use:
- Rail-to-Rail Input/Output
- Gain Bandwidth Product: 1.3 MHz (typical)
- Unity Gain Stable
- Available in Single and Dual
- Single with Chip Select (CS): MCP6V03
• Extended Temperature Range: -40°C to +125°C
Description
The Microchip Technology Inc. MCP6V01/2/3 family of
operational amplifiers has input offset voltage
correction for very low offset and offset drift. These
devices have a wide gain bandwidth product (1.3 MHz,
typical) and strongly reject switching noise. They are
unity gain stable, have no 1/f noise, and have good
PSRR and CMRR. These products operate with a
single supply voltage as low as 1.8V, while drawing
300 µA/amplifier (typical) of quiescent current.
The Microchip Technology Inc. MCP6V01/2/3 op amps
are offered in single (MCP6V01), single with Chip
Select (CS) (MCP6V03), and dual (MCP6V02). They
are designed in an advanced CMOS process.
Package Types (top view)
MCP6V01
SOIC
NC 1
V
IN
– 2
V
IN
+ 3
V
SS
4
8 NC
7 V
DD
6 V
OUT
5 NC
MCP6V01
2x3 TDFN *
NC 1
V
IN
– 2
V
IN
+ 3
V
SS
4
EP
9
8 NC
7 V
DD
6 V
OUT
5 NC
Typical Applications
•
•
•
•
•
Portable Instrumentation
Sensor Conditioning
Temperature Measurement
DC Offset Correction
Medical Instrumentation
MCP6V02
SOIC
V
OUTA
1
V
INA
– 2
V
INA
+ 3
V
SS
4
8 V
DD
MCP6V02
4x4 DFN *
V
OUTA
1
EP
9
8 V
DD
7 V
OUTB
6 V
INB
–
5 V
INB
+
Design Aids
•
•
•
•
•
•
SPICE Macro Models
FilterLab
®
Software
Mindi™ Circuit Designer & Simulator
Microchip Advanced Part Selector (MAPS)
Analog Demonstration and Evaluation Boards
Application Notes
7 V
OUTB
V – 2
INA
6 V
INB
– V +
3
INA
5 V
INB
+
V
SS
4
MCP6V03
SOIC
NC 1
V
IN
– 2
V
IN
+ 3
V
SS
4
8 CS
7 V
DD
6 V
OUT
5 NC
MCP6V03
2x3 TDFN *
NC 1
V
IN
– 2
V
IN
+ 3
V
SS
4
EP
9
8 CS
7 V
DD
6 V
OUT
5 NC
Related Parts
• MCP6V06/7/8: Non-spread clock, lower noise
* Includes Exposed Thermal Pad (EP); see
Table 3-1.
©
2008 Microchip Technology Inc.
DS22058C-page 1
MCP6V01/2/3
Typical Application Circuit
V
IN
R
1
R
2
C
2
3 kΩ
MCP6V01
MCP6XXX
R
3
V
OUT
R
2
V
DD
/2
Offset Voltage Correction for Power Driver
DS22058C-page 2
©
2008 Microchip Technology Inc.
MCP6V01/2/3
1.0
1.1
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
†
Notice:
Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
††
See
Section 4.2.1 “Rail-to-Rail Inputs”.
V
DD
– V
SS
.......................................................................6.5V
Current at Input Pins ....................................................±2 mA
Analog Inputs (V
IN
+ and V
IN
–) †† ... V
SS
– 1.0V to V
DD
+1.0V
All other Inputs and Outputs ............ V
SS
– 0.3V to V
DD
+0.3V
Difference Input voltage ...................................... |V
DD
– V
SS
|
Output Short Circuit Current ................................ Continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature ...................................-65°C to +150°C
Max. Junction Temperature ........................................ +150°C
ESD protection on all pins (HBM, MM)
................≥
4 kV, 300V
1.2
Specifications
DC ELECTRICAL SPECIFICATIONS
TABLE 1-1:
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, V
CM
= V
DD
/3,
V
OUT
= V
DD
/2, V
L
= V
DD
/2, R
L
= 20 kΩ to V
L
, and CS = GND (refer to
Figure 1-5
and
Figure 1-6).
Parameters
Input Offset
Input Offset Voltage
Input Offset Voltage Drift with Temperature
(linear Temp. Co.)
Input Offset Voltage Quadratic Temp. Co.
Power Supply Rejection
Input Bias Current and Impedance
Input Bias Current
Input Bias Current across Temperature
Input Offset Current
Input Offset Current across Temperature
Common Mode Input Impedance
Differential Input Impedance
Common Mode
Common-Mode Input Voltage Range
Common-Mode Rejection
Sym
V
OS
TC
1
TC
2
PSRR
I
B
I
B
I
B
I
OS
I
OS
I
OS
Z
CM
Z
DIFF
V
CMR
CMRR
Min
-2.0
-50
—
130
—
—
—
—
—
-1000
—
—
V
SS
−
0.20
130
Typ
—
—
±0.1
143
±1
60
600
-30
-50
-75
10
13
||6
10
13
||6
—
142
Max
+2.0
+50
—
—
—
—
5000
—
—
1000
—
—
V
DD
+ 0.20
—
Units
µV
nV/°C
Conditions
T
A
= +25°C
(Note 1)
T
A
= -40 to +125°C
(Note 1)
(Note 1)
nV/°C
2
T
A
= -40 to +125°C
dB
pA
pA
pA
pA
pA
pA
Ω||pF
Ω||pF
V
dB
(Note 2)
V
DD
= 1.8V,
V
CM
= -0.2V to 2.0V
(Note
1, Note 2)
V
DD
= 5.5V,
V
CM
= -0.2V to 5.7V
(Note
1, Note 2)
V
DD
= 1.8V,
V
OUT
= 0.2V to 1.6V
(Note 1)
V
DD
= 5.5V,
V
OUT
= 0.2V to 5.3V
(Note 1)
T
A
= +85°C
T
A
= +125°C
T
A
= +85°C
T
A
= +125°C
CMRR
140
152
—
dB
Open-Loop Gain
DC Open-Loop Gain (large signal)
A
OL
A
OL
Note 1:
2:
130
140
145
156
—
—
dB
dB
Set by design and characterization. Due to thermal junction and other effects in the production environment, these parts
can only be screened in production (except TC
1
; see
Appendix B: “Offset Related Test Screens”).
Figure 2-18
shows how V
CMR
changed across temperature for the first three production lots.
©
2008 Microchip Technology Inc.
DS22058C-page 3
MCP6V01/2/3
TABLE 1-1:
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, V
CM
= V
DD
/3,
V
OUT
= V
DD
/2, V
L
= V
DD
/2, R
L
= 20 kΩ to V
L
, and CS = GND (refer to
Figure 1-5
and
Figure 1-6).
Parameters
Output
Maximum Output Voltage Swing
Output Short Circuit Current
Power Supply
Supply Voltage
Quiescent Current per amplifier
POR Trip Voltage
Note 1:
2:
Sym
V
OL
, V
OH
I
SC
I
SC
V
DD
I
Q
V
POR
Min
V
SS
+ 15
—
—
1.8
200
1.15
Typ
—
±7
±22
—
300
—
Max
V
DD
−
15
—
—
5.5
400
1.65
Units
mV
mA
mA
V
µA
V
I
O
= 0
Conditions
G = +2, 0.5V input overdrive
V
DD
= 1.8V
V
DD
= 5.5V
Set by design and characterization. Due to thermal junction and other effects in the production environment, these parts
can only be screened in production (except TC
1
; see
Appendix B: “Offset Related Test Screens”).
Figure 2-18
shows how V
CMR
changed across temperature for the first three production lots.
TABLE 1-2:
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, V
CM
= V
DD
/3,
V
OUT
= V
DD
/2, V
L
= V
DD
/2, R
L
= 20 kΩ to V
L
, C
L
= 60 pF, and CS = GND (refer to
Figure 1-5
and
Figure 1-6).
Parameters
Amplifier AC Response
Gain Bandwidth Product
Slew Rate
Phase Margin
Amplifier Noise Response
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Amplifier Distortion (Note 1)
Intermodulation Distortion (AC)
Amplifier Step Response
Start Up Time
Offset Correction Settling Time
Output Overdrive Recovery Time
Note 1:
2:
Sym
GBWP
SR
PM
E
ni
E
ni
e
ni
e
ni
i
ni
IMD
IMD
t
STR
t
STL
t
ODR
Min
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
1.3
0.5
65
0.79
2.5
120
45
0.6
<1
<1
500
300
100
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
Units
MHz
V/µs
°
µV
P-P
µV
P-P
G = +1
Conditions
f = 0.01 Hz to 1 Hz
f = 0.1 Hz to 10 Hz
nV/√Hz f < 2.5 kHz
nV/√Hz f = 100 kHz
fA/√Hz
µV
PK
µV
PK
µs
µs
µs
V
CM
tone = 50 mV
PK
at 1 kHz, G
N
= 1, V
DD
= 1.8V
V
CM
tone = 50 mV
PK
at 1 kHz, G
N
= 1, V
DD
= 5.5V
V
OS
within 50 µV of its final value
G = +1, V
IN
step of 2V,
V
OS
within 50 µV of its final value
G = -100, ±0.5V input overdrive to V
DD
/2,
V
IN
50% point to V
OUT
90% point
(Note 2)
These parameters were characterized using the circuit in
Figure 1-7. Figure 2-37
and
Figure 2-38
show both an IMD
tone at DC and a residual tone at1 kHz; all other IMD and clock tones are spread by the randomization circuitry.
t
ODR
includes some uncertainty due to clock edge timing.
DS22058C-page 4
©
2008 Microchip Technology Inc.
MCP6V01/2/3
TABLE 1-3:
DIGITAL ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, V
CM
= V
DD
/3,
V
OUT
= V
DD
/2, V
L
= V
DD
/2, R
L
= 20 kΩ to V
L
, C
L
= 60 pF, and CS = GND (refer to
Figure 1-5
and
Figure 1-6).
Parameters
CS Pull-Down Resistor (MCP6V03)
CS Pull-Down Resistor
CS Low Specifications (MCP6V03)
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications (MCP6V03)
CS Logic Threshold, High
CS Input Current, High
CS Input High, GND Current per
amplifier
Sym
R
PD
V
IL
I
CSL
V
IH
I
CSH
I
SS
I
SS
Min
3
V
SS
—
Typ
5
—
5
Max
—
0.3V
DD
—
Units
MΩ
V
pA
CS = V
SS
Conditions
0.7V
DD
—
—
—
—
—
V
DD
/R
PD
-0.7
-2.3
20
V
DD
—
—
—
—
V
pA
µA
µA
pA
CS = V
DD
CS = V
DD
, V
DD
= 1.8V
CS = V
DD
, V
DD
= 5.5V
CS = V
DD
CS Low = V
SS
+0.3 V, G = +1 V/V,
V
OUT
= 0.9 V
DD
/2
CS High = V
DD
– 0.3 V, G = +1 V/V,
V
OUT
= 0.1 V
DD
/2
Amplifier Output Leakage, CS High I
O_LEAK
CS Dynamic Specifications (MCP6V03)
CS Low to Amplifier Output On
Turn-on Time
CS High to Amplifier Output High-Z
Internal Hysteresis
t
ON
t
OFF
V
HYST
—
—
—
11
10
0.25
100
—
—
µs
µs
V
TABLE 1-4:
TEMPERATURE SPECIFICATIONS
Parameters
Sym
T
A
T
A
T
A
θ
JA
θ
JA
θ
JA
Electrical Characteristics:
Unless otherwise indicated, all limits are specified for: V
DD
= +1.8V to +5.5V, V
SS
= GND.
Min
-40
-40
-65
—
—
—
Typ
—
—
—
41
44
150
Max
+125
+125
+150
—
—
—
Units
°C
°C
°C
°C/W
°C/W
°C/W
(Note 2)
(Note 1)
Conditions
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 8L-2x3 TDFN
Thermal Resistance, 8L-4x4 DFN
Thermal Resistance, 8L-SOIC
Note 1:
2:
Operation must not cause T
J
to exceed Maximum Junction Temperature specification (150°C).
Measured on a standard JC51-7, four layer printed circuit board with ground plane and vias.
©
2008 Microchip Technology Inc.
DS22058C-page 5
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