c. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S16-1732-Rev. A, 29-Aug-16
Document Number: 75658
1
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJA94EP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V
V
GS
= 0 V
On-State Drain Current
a
I
D(on)
V
GS
= 10 V
V
GS
= 10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V
V
GS
= 10 V
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 40 V, R
L
= 8
I
D
5 A, V
GEN
= 10 V, R
g
= 1
f = 1 MHz
V
GS
= 10 V
V
DS
= 40 V, I
D
= 5 A
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
-
-
-
-
-
-
0.18
-
-
-
-
1500
800
32
20
6
3
0.37
11
5
23
7
2000
1100
50
35
-
-
0.62
18
10
35
15
ns
nC
pF
g
fs
V
DS
= 80 V
V
DS
= 80 V, T
J
= 125 °C
V
DS
= 80 V, T
J
= 175 °C
V
DS
5 V
I
D
= 10 A
I
D
= 10 A, T
J
= 125 °C
I
D
= 10 A, T
J
= 175 °C
80
2.5
-
-
-
-
30
-
-
-
-
-
3.0
-
-
-
-
-
0.0112
-
-
40
-
3.5
± 100
1
50
150
-
0.0135
0.0208
0.0254
-
S
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 15 V, I
D
= 10 A
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
Forward Voltage
I
SM
V
SD
I
F
= 10 A, V
GS
= 0
-
-
-
0.83
100
1.2
A
V
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-1732-Rev. A, 29-Aug-16
Document Number: 75658
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJA94EP
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
100
80
2nd line
I
D
- Drain Current (A)
60
40
20
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
V
GS
= 5 V
V
GS
= 10 V thru 7 V
V
GS
= 6 V
Vishay Siliconix
Axis Title
10000
85
68
1000
1st line
2nd line
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
T
C
= 25 °C
10000
51
34
17
T
C
= 125 °C
100
100
0
0
2
4
T
C
= -55 °C
10
8
10
6
V
GS
- Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
0.05
0.04
1000
1st line
2nd line
0.03
0.02
V
GS
= 10 V
Axis Title
10000
2000
1600
2nd line
C - Capacitance (pF)
1200
800
400
C
rss
10000
2nd line
R
DS(on)
- On-Resistance ( )
C
iss
1000
1st line
2nd line
100
10
0
16
32
48
64
80
V
DS
- Drain-to-Source Voltage (V)
2nd line
10000
I
D
= 10 A
V
GS
= 10 V
100
C
oss
0.01
0.00
0
16
32
48
64
80
I
D
- Drain Current (A)
2nd line
10
0
On-Resistance vs. Drain Current
Capacitance
Axis Title
10
2nd line
V
GS
- Gate-to-Source Voltage (V)
8
6
4
100
2
0
0
5
10
15
20
25
Q
g
- Total Gate Charge (nC)
2nd line
10
I
D
= 5 A
V
DS
= 40 V
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Normalized)
2.0
1.7
1000
1st line
2nd line
100
0.8
0.5
-50 -25
0
25
50
75 100 125 150 175
T
J
- Junction Temperature (°C)
2nd line
10
1.4
1.1
1000
1st line
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S16-1732-Rev. A, 29-Aug-16
Document Number: 75658
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJA94EP
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
100
10
2nd line
I
S
- Source Current (A)
T
J
= 150 °C
Vishay Siliconix
Axis Title
10000
0.10
0.08
1000
1st line
2nd line
T
J
= 150 °C
10000
1000
T
J
= 25 °C
0.1
100
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
2nd line
10
1st line
2nd line
1
2nd line
R
DS(on)
- On-Resistance (Ω)
0.06
0.04
100
0.02
0.00
0
2
4
T
J
= 25 °C
10
8
10
6
V
GS
- Gate-to-Source Voltage (V)
2nd line
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to Source Voltage
Axis Title
0.5
0.1
2nd line
V
GS(th)
Variance (V)
1000
1st line
2nd line
-0.3
-0.7
100
-1.1
-1.5
-50 -25
0
25
50
75 100 125 150 175
T
J
- Temperature (°C)
2nd line
I
D
= 250
μA
I
D
= 5 mA
Axis Title
10000
100
80
T
C
= 25 °C
10000
2nd line
g
fs
- Transconductance (S)
T
C
= -55 °C
1000
40
20
0
0
6
12
18
T
C
= 125 °C
100
10
10
24
30
I
D
- Drain Current (A)
2nd line
Threshold Voltage
Transconductance
Axis Title
105
2nd line
V
DS
- Drain-to-Source Voltage (V)
10000
101
I
D
= 1 mA
1000
1st line
2nd line
97
93
100
89
85
-50 -25
0
25
50
75 100 125 150 175
T
J
- Junction Temperature (°C)
2nd line
10
Drain Source Breakdown vs. Junction Temperature
S16-1732-Rev. A, 29-Aug-16
Document Number: 75658
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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