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TMPG06-13AHE3_A/B

产品描述ESD 抑制器/TVS 二极管 400W,13V 5%,AXIAL AEC-Q101 Qualified
产品类别电路保护    ESD 抑制器/TVS 二极管   
文件大小107KB,共6页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
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TMPG06-13AHE3_A/B概述

ESD 抑制器/TVS 二极管 400W,13V 5%,AXIAL AEC-Q101 Qualified

TMPG06-13AHE3_A/B规格参数

参数名称属性值
厂商名称Vishay(威世)
产品种类ESD 抑制器/TVS 二极管
发货限制Mouser目前不销售该产品。
系列TMPG06
极性Unidirectional
通道数量1 Channel
端接类型Axial
击穿电压13.7 V
钳位电压18.2 V
Ipp - 峰值脉冲电流22 A
封装 / 箱体MPG06
Pd-功率耗散1 W
最小工作温度- 65 C
最大工作温度+ 185 C
资格AEC-Q101
封装Cut Tape
封装Reel
工厂包装数量3000
Vf - 正向电压3.5 V

文档预览

下载PDF文档
TMPG06-10A thru TMPG06-43A
www.vishay.com
Vishay General Semiconductor
PAR
®
Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Available in uni-directional polarity only
• 400 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty cycle):
0.01 %
• Excellent clamping capability
• Very fast response time
MPG06
• Low incremental resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
PRIMARY CHARACTERISTICS
V
BR
V
WM
P
PPM
P
D
I
FSM
T
J
max.
Polarity
Package
10 V to 43 V
8.55 V to 36.8 V
400 W
1.0 W
40 A
185 °C
Uni-directional
MPG06
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
MECHANICAL DATA
Case:
MPG06, molded epoxy over passivated junction
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“X” denotes revision code e.g. A, B, ...)
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity:
color band denotes cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
Peak pulse current with a 10/1000 μs waveform
(1)(2)
(fig. 3)
Power dissipation on infinite heatsink at T
L
= 75 °C (fig. 5)
Peak forward surge current 8.3 ms single half
sine-wave
(2)
Maximum instantaneous forward voltage at 25 A
(2)
Operating junction and storage temperature range
(1)
SYMBOL
(fig. 1)
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
VALUE
400
See next table
1.0
40
3.5
-65 to +185
UNIT
W
A
W
A
V
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
Revision: 04-Nov-16
Document Number: 88404
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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