Uncompensated
SO-16 Pressure Sensor
SM9D, SM9G Series
FEATURES
•
•
•
•
•
•
Uncompensated millivolt analog output
Differential or gage pressure options
Vertical or horizontal porting configurations
Pressure ranges: 0.15, 0.6 & 1.5 PSI
Variable supply voltage
Built in ESD protection
DESCRIPTION
Silicon Microstructures provides its most popular pressure sensor die
in a surface mount small outline package (SO-16) configuration. All
parts in this series are uncompensated high performance die
mounted in a rugged plastic package designed for surface mounting.
The low pressure SM9D/G series incorporates Silicon Microstructures’
unique pressure die to achieve high performance in pressure ranges of
0.15, 0.6 & 1.5 PSI full-scale in gauge and differential configurations.
Industrial
Handheld Meters
Pneumatic Gauges
Pressure Switches
Consumer
Sports Equipment
Appliances
Medical
Hospital Beds
Wound Therapy
Health Monitoring
Silicon Microstructures, Inc. 2001-2017. All rights reserved
DOC # 40DS9509.03
+1-(408) 577-0100
|
sales@si-micro.com
I
www.si-micro.com
Page 1
SM9G, SM9D Series
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ABSOLUTE MAXIMUM RATING TABLE
All parameters are specified at V
DD
= 5.00 V DC SUPPLY at 25
o
C, unless otherwise noted.
No.
1
2
3
4
5
NOTES:
Characteristic
Supply Voltage
(a, c)
Supply Current
(a, c)
Operating Temperature Range
(b)
Storage Temperature
(b)
ESD Voltage (HBM)
Symbol
V
DD
I
VDD
T
OP
T
STG
V
ESD
Minimum
-
-
-40
-40
4
Typical
-
-
-
-
-
Maximum
6.5
1.6
+85
+125
-
Units
V
mA
°C
°C
kV
a. The device can only be driven with the supply voltage connected to the pins as shown. The positive output will increase with increasing
pressure applied to the package.
b. Tested on a sample basis.
c. Never exceed 6.5 V supply voltage under any operating conditions.
No.
6
8
9
Product Number
SM9X-BXX-X-001S-000
SM9X-BXX-X-006S-000
SM9X-BXX-X-015S-000
Operating Pressure
0.15 PSI
0.6 PSI
1.5 PSI
Proof Pressure
(P
PROOF
)
(d, e)
1.5 PSI
4.8 PSI
12.0 PSI
Burst Pressure
(P
BURST
)
(d, f)
3.0 PSI
6.0 PSI
15.0 PSI
NOTES:
d. Tested on a sample basis.
e. Proof pressure is defined as the maximum pressure to which the device can be taken and still perform within specifications after returning to
the operating pressure range.
f. Burst pressure is the pressure at which the device suffers catastrophic failure resulting in pressure loss through the device.
Silicon Microstructures, Inc. 2001-2017. All rights reserved
DOC # 40DS9509.03
+1-(408) 577-0100
|
sales@si-micro.com
I
www.si-micro.com
Page 2
SM9G, SM9D Series
www.si-micro.com
OPERATING CHARACTERISTICS TABLE
All parameters are specified at V
DD
= 5.0 V DC SUPPLY at 25°C, unless otherwise noted.
No.
10a
10b
11
12
13
14
15
16
17
Characteristic
Span
(0.15 PSI) (g)
Span
(0.60, 1.5 PSI) (g)
Zero Offset
TC Span
(g, i, j)
TC Zero Offset
(g, i, j)
TC Resistance
(h, i, j)
Topside Linearity
(g, j)
Backside Linearity
(g, j)
Symbol
V
SPAN
V
ZERO
TCS
TCZ
TCR
NL
Minimum
30
50
-55
-0.24
-100
0.17
-0.15
-0.35
Typical
45
90
0
-0.21
-
0.20
±0.1
±0.2
5.0
Maximum
60
120
+55
-0.15
100
0.23
0.15
Units
mV
mV
%FS/°C
µV/°C
%R
B
/°C
%FS
0.35
6.0
kΩ
Bridge Resistance
R
B
4.0
Notes:
g. Tested on a sample basis.
h. The device can only be driven with the supply voltage connected to the pins as shown.
i. Determined by measurements taken between -40°C and 85°C.
j. Defined as best fit straight line.
Silicon Microstructures, Inc. 2001-2017. All rights reserved
DOC # 40DS9509.03
+1-(408) 577-0100
|
sales@si-micro.com
I
www.si-micro.com
Page 3
SM9G, SM9D Series
Diagrams & Dimensions
Dual Horizontal Porting Configuration: SM9D-BB
www.si-micro.com
Dual Vertical Porting Configuration: SM9D-BC
Notes:
•
•
•
All dimensions in units of [mm]
Moisture Sensitivity Level (MSL): Level 3
Positive pressure applied to the topside of the die [T] is resulting in a positive change in output.
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Page 4
Silicon Microstructures, Inc. 2001-2017. All rights reserved
DOC # 40DS9509.03
SM9G, SM9D Series
www.si-micro.com
Single Vertical Porting Configuration: SM9G-BG
Notes:
•
•
•
All dimensions in units of [mm].
Moisture Sensitivity Level (MSL): Level 3
Positive pressure applied to the port is resulting in a positive change in output. Pressure is applied to the backside of the die.
Silicon Microstructures, Inc. 2001-2017. All rights reserved
DOC # 40DS9509.03
+1-(408) 577-0100
|
sales@si-micro.com
I
www.si-micro.com
Page 5
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