BT145-800RT
SCR
24 April 2017
Product data sheet
1. General description
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 (TO-220AB) plastic package
intended for use in applications requiring high bidirectional blocking voltage capability, high current
inrush capability and high thermal cycling performance.
2. Features and benefits
•
•
•
•
•
•
•
•
AC power control
High bidirectional blocking voltage capability
High thermal cycling performance
Planar passivated for voltage ruggedness and reliability
High junction operating temperature capability (T
j(max)
= 150 °C)
Package meets UL94V0 flammability requirement
Package is RoHS compliant
IEC 61000-4-4 fast transient
3. Applications
•
•
•
•
•
•
Capacitive Discharge Ignition (CDI)
Crowbar protection
Inrush protection
Motor control
Voltage regulation
High junction operating temperature capability (T
j(max)
= 150 °C)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Absolute maximum rating
V
DRM
I
T(RMS)
I
TSM
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
half sine wave; T
mb
≤ 128°C;
Fig. 1; Fig. 2; Fig. 3
half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms;
Fig. 4; Fig. 5
half sine wave; T
j(init)
= 25 °C;
t
p
= 8.3 ms
T
j
junction temperature
800
25
300
330
150
V
A
A
A
°C
Conditions
Values
Unit
WeEn Semiconductors
BT145-800RT
Conditions
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 7
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 30 A; T
j
= 25 °C;
Fig. 10
V
DM
= 536 V; T
j
= 150 °C; (V
DM
= 67%
of V
DRM
); exponential waveform;
gate open circuit
Min
1.5
-
-
80
Typ
-
-
1.10
-
Max
10
60
1.50
-
Unit
mA
mA
V
V/μs
SCR
Symbol
I
GT
I
H
V
T
dV
D
/dt
Parameter
gate trigger current
holding current
on-state voltage
rate of rise of off-state
voltage
Static characteristics
Dynamic characteristics
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
1
2
3
mb
K
A
G
A
cathode
anode
gate
mounting base; connect to
anode
Simplified outline
mb
Graphic symbol
A
G
sym037
K
1 2 3
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
BT145-800RT
TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
BT145-800RT
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
24 April 2017
2 / 11
WeEn Semiconductors
BT145-800RT
SCR
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
repetitive peak reverse
voltage
average on-state current
RMS on-state current
non-repetitive peak on-
state current
half sine wave; T
mb
≤ 128°C;
half sine wave; T
mb
≤ 128°C;
Fig. 1; Fig. 2; Fig. 3
half sine wave; T
j(init)
= 25 °C; t
p
= 10 ms;
Fig. 4; Fig. 5
half sine wave; T
j(init)
= 25 °C;
t
p
= 8.3 ms
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
rate of rise of on-state
current
peak gate current
peak gate voltage
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
t
p
= 10ms; sine wave
I
G
= 20mA
Conditions
Values
800
800
16
25
300
330
450
200
5
5
20
0.5
-40 to 150
150
Unit
V
V
A
A
A
A
A
2
s
A/μs
A
V
W
W
°C
°C
I
T(RMS)
(A)
25
20
15
10
5
0
-50
30
aaf325-001
128°C
I
T(RMS)
(A)
30
28
26
24
22
20
10
-2
32
aaf325-002
0
50
100
T
mb
(°C)
150
10
-1
1
10
surge duration (s)
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
f = 50Hz; T
mb
= 128 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BT145-800RT
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
24 April 2017
3 / 11
WeEn Semiconductors
BT145-800RT
aaf325-003
SCR
P
tot
(W)
24
20
16
12
8
4
0
conduction form
angle
factor
(degrees)
α
30
60
90
120
180
4
2.8
2.2
1.9
1.57
2.2
α
4
2.8
a = 1.57
1.9
126
T
mb(max)
(°C)
130
134
138
142
146
150
16
0
2
4
6
8
10
12
14
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
I
TSM
(A)
400
I
T
I
T(AV)
(A)
aaf325-004
I
TSM
t
300
t
p
T
j(init)
= 25 °C max
200
100
0
1
10
10
2
number of cycles (n)
10
3
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
I
TSM
(A)
10
4
I
T
aaf325-005
I
TSM
t
t
p
T
j(init)
= 25 °C max
(1)
10
3
10
2
10
-5
10
-4
10
-3
t
p
(s)
10
-2
t
p
≤ 20 ms ;
(1) dI
T
/dt limit
Fig. 5. Total power dissipation as a function of RMS on-state current; maximum values
BT145-800RT
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
24 April 2017
4 / 11
WeEn Semiconductors
BT145-800RT
SCR
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol
R
th(j-mb)
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient free air
Conditions
Fig. 6
Min
-
Typ
-
Max
1
Unit
K/W
R
th(j-a)
in free air
-
60
-
K/W
Z
th(j-mb)
(K/W)
10
aaf325-006
1
10
-1
P
10
-2
t
p
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
T
δ=
t
T
t
p
(s)
10
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration
BT145-800RT
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
24 April 2017
5 / 11
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