BTA410-800CT
3Q Hi-Com Triac
Rev.01 - 10 August 2018
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic
package intended for use in circuits where high static and dynamic dV/dt and high dI/dt
can occur. This "series CT" triac will commutate the full RMS current at the maximum
rated junction temperature (T
j(max)
= 150 °C) without the aid of a snubber. It is used in
applications where "high junction operating temperature capability" is required.
2. Features and benefits
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
High junction operating temperature capability
High voltage capability
Less sensitive gate for high noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
3. Applications
•
•
•
•
Applications subject to high temperature
Electronic thermostats (heating and cooling)
Motor controls e.g. washing machines and vacuum cleaners
Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
full sine wave; T
mb
≤ 131 °C;
Fig. 1; Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
Conditions
Min
-
-
-
Typ
-
-
-
Max
800
10
100
Unit
V
A
A
WeEn Semiconductors
BTA410-800CT
3Q Hi-Com Triac
Symbol
I
GT
Parameter
gate trigger current
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-
T
j
= 25 °C;
Fig. 7
Min
2
2
2
Typ
-
-
-
Max
35
35
35
Unit
mA
mA
mA
Static characteristics
Dynamic characteristics
dV
D
/dt
rate of rise of off-state
voltage
rate of change of
commutating current
V
DM
= 536 V; T
j
= 150 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 10 A;
dV
com
/dt = 20 V/μs; (snubberless
condition); gate open circuit
500
-
-
V/μs
dI
com
/dt
8
-
-
A/ms
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
1
2
3
mb
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main
terminal 2
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
BTA410-800CT
TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
BTA410-800CT
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
10 August 2018
2 / 12
WeEn Semiconductors
BTA410-800CT
3Q Hi-Com Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I
2
t for fusing
rate of rise of on-state
current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
full sine wave; T
mb
≤ 131 °C;
Fig. 1; Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
I
2
t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
t
p
= 10ms; sine-wave pulse
I
G
= 70 mA
Conditions
Min
-
-
-
-
-
-
-
-
-
-40
-
Max
800
10
100
110
50
100
2
5
0.5
150
150
Unit
V
A
A
A
A
2
s
A/μs
A
W
W
°C
°C
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
f = 50Hz; T
mb
=131 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BTA410-800CT
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©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
10 August 2018
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WeEn Semiconductors
BTA410-800CT
3Q Hi-Com Triac
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
t
p
≤ 20 ms ;
(1) dI
T
/dt limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse duration; maximum values
BTA410-800CT
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
10 August 2018
4 / 12
WeEn Semiconductors
BTA410-800CT
3Q Hi-Com Triac
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol
R
th(j-mb)
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
full cycle;
Fig. 6
half cycle;
Fig. 6
in free air
Min
-
-
-
Typ
-
-
60
Max
1.5
2
-
Unit
K/W
K/W
K/W
R
th(j-a)
(1) Unidirectional (half cycle)
(2) Bidirectional (full cycle)
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration
BTA410-800CT
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
10 August 2018
5 / 12
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