RN1307 to RN1309
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1307, RN1308, RN1309
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
With built-in bias resistors.
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2307 to RN2309
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN1307
RN1308
RN1309
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
USM
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006g (typ.)
Rating
50
50
6
V
EBO
7
15
I
C
P
C
T
j
T
stg
100
100
150
-55 to 150
mA
mW
°C
°C
V
Unit
V
V
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
RN1307
Emitter-base voltage
RN1308
RN1309
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1988-04
1
2017-01-06
RN1307 to RN1309
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
I
CBO
Collector cut-off current
I
CEO
RN1307
Emitter cut-off current
RN1308
RN1309
RN1307
DC current gain
RN1308
RN1309
Collector-emitter saturation voltage
RN1307
Input voltage (ON)
RN1308
RN1309
RN1307
Input voltage (OFF)
RN1308
RN1309
Translation frequency
Collector output capacitance
RN1307
Input resistor
RN1308
RN1309
RN1307
Resistor ratio
RN1308
RN1309
R1 / R2
―
R1
―
f
T
C
ob
V
CE
= 10 V, I
C
= 5 mA
V
CB
= 10 V, I
E
= 0 A, f = 1 MHz
V
I (OFF)
V
CE
= 5 V, I
C
= 0.1 mA
V
I (ON)
V
CE
= 0.2 V, I
C
= 5 mA
V
CE(sat)
I
C
= 5 mA, I
B
= 0.25 mA
h
FE
V
CE
= 5 V, I
C
= 10 mA
I
EBO
V
CE
= 50 V, I
B
= 0 A
V
EB
= 6 V, I
C
= 0 A
V
EB
= 7 V, I
C
= 0 A
V
EB
= 15 V, I
C
= 0 A
Test Condition
V
CB
= 50 V, I
E
= 0 A
Min
―
―
0.081
0.078
0.167
80
80
70
―
0.7
1.0
2.2
0.5
0.6
1.5
―
―
7
15.4
32.9
0.191
0.421
1.92
Typ.
―
―
―
―
―
―
―
―
0.1
―
―
―
―
―
―
250
3
10
22
47
0.213
0.468
2.14
Max
100
nA
500
0.15
0.145
0.311
―
―
―
0.3
1.8
2.6
5.8
1.0
1.16
2.6
―
6
13
28.6
61.1
0.232
0.515
2.35
―
kΩ
MHz
pF
V
V
V
―
mA
Unit
2
2017-01-06
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