Freescale Semiconductor
Technical Data
Document Number: MRF6V12500H
Rev. 5, 7/2016
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These RF power transistors are designed for applications operating at
frequencies between 960 and 1215 MHz such as distance measuring
equipment (DME), transponders and secondary radars for air traffic control.
These devices are suitable for use in pulse applications, including Mode S
ELM.
Typical Pulse Performance: V
DD
= 50 Volts, I
DQ
= 200 mA
Application
Narrowband
Short Pulse
Narrowband
Mode S ELM
Signal Type
Pulse
(128
sec,
10% Duty Cycle)
Pulse
(48
(32
sec
on, 18
sec
off),
Period 2.4 msec,
6.4% Long--term Duty Cycle)
Pulse
(128
sec,
10% Duty Cycle)
P
out (1)
(W)
500 Peak
500 Peak
Freq.
(MHz)
1030
1030
G
ps
(dB)
19.7
19.7
D
(%)
62.0
62.0
MRF6V12500H
MRF6V12500HS
MRF6V12500GS
960-
-1215 MHz, 500 W, 50 V
PULSE
RF POWER LDMOS TRANSISTORS
Broadband
500 Peak
960--1215
18.5
57.0
NI-
-780H-
-2L
MRF6V12500H
1. Minimum output power for each specified pulse condition.
Capable of Handling 10:1 VSWR @ 50 Vdc, 1030 MHz, 500 Watts Peak
Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified up to a Maximum of 50 V
DD
Operation
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
NI-
-780S-
-2L
MRF6V12500HS
NI-
-780GS-
-2L
MRF6V12500GS
Gate 2
1 Drain
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2009--2010, 2012, 2015--2016. All rights reserved.
MRF6V12500H MRF6V12500HS MRF6V12500GS
1
RF Device Data
Freescale Semiconductor, Inc.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
--0.5, +110
--6.0, +10
-- 65 to +150
150
225
Unit
Vdc
Vdc
C
C
C
Table 2. Thermal Characteristics
Characteristic
Thermal Impedance, Junction to Case
Case Temperature 80C, 500 W Peak, 128
sec
Pulse Width, 10% Duty Cycle
Symbol
Z
JC
Value
(2,3)
0.044
Unit
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2, passes 2600 V
B, passes 200 V
IV, passes 2000 V
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Drain--Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 200 mA)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 90 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 1.32 mA)
Gate Quiescent Voltage
(V
DD
= 50 Vdc, I
D
= 200 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 3.26 Adc)
Dynamic Characteristics
(4)
Reverse Transfer Capacitance
(V
DS
= 50 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 50 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 50 Vdc, V
GS
= 0 Vdc
30 mV(rms)ac @ 1 MHz)
1.
2.
3.
4.
C
rss
C
oss
C
iss
—
—
—
0.2
697
1391
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
0.9
1.7
—
1.7
2.4
0.25
2.4
3.2
—
Vdc
Vdc
Vdc
I
GSS
V
(BR)DSS
I
DSS
I
DSS
—
110
—
—
—
—
—
—
10
—
20
200
Adc
Vdc
Adc
Adc
Symbol
Min
Typ
Max
Unit
Continuous use at maximum temperature will affect MTTF.
MTTF calculator available at
http://www.nxp.com/RF/calculators.
Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to
http://www.nxp.com/RF
and search for AN1955.
Part internally matched both on input and output.
(continued)
MRF6V12500H MRF6V12500HS MRF6V12500GS
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Narrowband Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 200 mA, P
out
= 500 W Peak (50 W Avg.),
f = 1030 MHz, 128
sec
Pulse Width, 10% Duty Cycle
Power Gain
Drain Efficiency
Input Return Loss
G
ps
D
IRL
18.5
58.0
—
19.7
62.0
--18
22.0
—
--9
dB
%
dB
Typical Broadband Performance — 960-
-1215 MHz
(In Freescale 960--1215 MHz Test Fixture, 50 ohm system) V
DD
= 50 Vdc,
I
DQ
= 200 mA, P
out
= 500 W Peak (50 W Avg.), f = 960--1215 MHz, 128
sec
Pulse Width, 10% Duty Cycle
Power Gain
Drain Efficiency
G
ps
D
—
—
18.5
57.0
—
—
dB
%
Table 5. Ordering Information
Device
MRFE6V12500HR5
MRFE6V12500HSR5
MRFE6V12500GSR5
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel
Tape and Reel Information
NI--780H--2L
NI--780S--2L
NI--780GS--2L
Package
MRF6V12500H MRF6V12500HS MRF6V12500GS
RF Device Data
Freescale Semiconductor, Inc.
3
V
BIAS
R3
R1
C5
C9
C8
C7
C3
Z19
Z9
Z10
Z11
Z12
Z13
Z14
C12
C13
+
C14
+
C15
V
SUPPLY
RF
INPUT
Z15
Z16
Z17
C2
Z18
RF
OUTPUT
Z1
C1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
DUT
Z20
Z21
R4
R2
C6
C4
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Z19, Z21
PCB
C16
C11
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9, Z20
Z10
C10
0.457 x 0.080 Microstrip
0.250 x 0.080 Microstrip
0.605 x 0.040 Microstrip
0.080 x 0.449 Microstrip
0.374 x 0.608 Microstrip
0.118 x 1.252 Microstrip
0.778 x 1.710 Microstrip
0.095 x 1.710 Microstrip
0.482 x 0.050 Microstrip
0.138 x 1.500 Microstrip
0.161” x 1.500 Microstrip
0.613” x 1.281 Microstrip
0.248” x 0.865 Microstrip
0.087” x 0.425 Microstrip
0.309” x 0.090 Microstrip
0.193” x 0.516 Microstrip
0.279” x 0.080 Microstrip
0.731” x 0.080 Microstrip
0.507” x 0.040 Microstrip
Arlon CuClad 250GX--0300--55--22, 0.030,
r
= 2.55
Figure 2. MRF6V12500H(HS) Test Circuit Schematic
Table 6. MRF6V12500H(HS) Test Circuit Component Designations and Values
Part
C1, C2
C3, C4, C5, C6
C7, C10
C8, C11, C13, C16
C9
C12
C14, C15
R1, R2
R3, R4
Description
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33 pF Chip Capacitors
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2.2
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100 V Chip Capacitors
22
F,
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1
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100 V Chip Capacitor
470
F,
63 V Electrolytic Capacitors
56
,
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0
,
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Part Number
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CRCW120656R0FKEA
CRCW12060000Z0EA
Manufacturer
ATC
ATC
Murata
ATC
AVX
Murata
Multicomp
Vishay
Vishay
MRF6V12500H MRF6V12500HS MRF6V12500GS
4
RF Device Data
Freescale Semiconductor, Inc.
C14
R3
MRF6V12500H
Rev. 1
C9
C12
C8
C7
R1
C3
C5
C13
C15
CUT OUT AREA
C1
C2
R2
C11 C10
R4
C4
C6
C16
Figure 3. MRF6V12500H(HS) Test Circuit Component Layout
MRF6V12500H MRF6V12500HS MRF6V12500GS
RF Device Data
Freescale Semiconductor, Inc.
5
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