®
D3S650N65x
650V, 650mΩ, 4.6A N-Channel Enhancement Mode Super Junction Power MOSFET
Ordering Information
Part Number
D3S650N65B-U
D3S650N65E-U
Package Options
Package Option
TO-220
TO-263
TO-220
Device Schematic
Drain (Pin 2, Tab)
TO-263
Description
+FET is an advanced Super Junction Power MOSFET offering
excellent efficiency through low Rds-ON and low gate
charge. +FET
TM
is a rugged device with precision charge
balance implementation designed for demanding uses such as
enterprise power computing power supplies, motor control,
lighting and other challenging power conversion applications.
TM
Gate
(Pin 1)
Source
(Pin 3)
Features
LOW R
DS(ON)
FAST SWITCHING
HIGH E
AS
REL TEST SPEC: JESD-22
HTRB >3000 HRS
Benefits
LOW CONDUCTION LOSSES
HIGH EFFICIENCY
EXCELLENT AVALANCHE PERFORMANCE
Table 1
Key Parameters
Parameter
V
DSS
@ T
jmax
RDS(on) max
Qg typ
I
Dmax
@
25 ºC
Value
710
< 650
9
7.5
Unit
V
mΩ
nC
A
Applications
POWER FACTOR CORRECTION
SERVER POWER SUPPLIES
TELECOM POWER SUPPLIES
INVERTERS
MOTOR CONTROL
Copyright D3 Semiconductor 2017 – All Rights Reserved
®
D3S650N65x
Contents
Contents............................................................................................................................................................... 2
1.
2.
3.
4.
5.
6.
7.
8.
Maximum Ratings ........................................................................................................................................ 3
Thermal Characteristics ............................................................................................................................... 4
Electrical Characteristics .............................................................................................................................. 5
Package Outlines.......................................................................................................................................... 7
Revision History ........................................................................................................................................... 9
Resources ..................................................................................................................................................... 9
Patents, Copyrights and Trademarks ........................................................................................................... 9
Legal Disclaimer ........................................................................................................................................... 9
Copyright D3 Semiconductor 2017 – All Rights Reserved
2
®
D3S650N65x
1. Maximum Ratings
Table 2
Maximum Ratings
@ T
j
= 25
ºC,
unless otherwise specified
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single
pulse
Avalanche energy, repetitive
Avalanche current, single
pulse
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage
(dynamic)
Power dissipation
Storage temperature
Operating junction
temperature
Mounting torque
Continuous diode forward
current
Diode pulse current
Reverse diode dv/dt
Maximum diode
commutation speed
Symbol
I
D
I
D, pulse
E
AS
E
AR
I
AS
dv/dt
V
GS
V
GS
P
tot
T
stg
T
j
Values
Min Typ Max
2.9
4.6
18
155
0.233
0.7
50
-30
-30
30
30
30
-55
-55
150
150
60
Unit
A
A
A
mJ
mJ
A
V/ns
V
V
W
ºC
ºC
N-cm
A
A
V/ns
A/µs
T
C
= 100ºC
T
C
= 25ºC
T
C
= 25ºC
Condition
I
D
= 1.8A; V
DD
= 50V, VGS = 10V,
L=50mH, RG=25 Ohms
I
D
= 1.0; V
DD
= 50V
V
DS
= 0….480V
Static
AC (F>1Hz)
TO-220, TO-263, T
C
= 25ºC
M3 and M3.5 screws
Tc = 25ºC
Tc = 25ºC
V
DS
=0…480V, I
SD
<=I
S
, T
j
= 25ºC
V
DS
=0…480V, I
SD
<=I
S
, T
j
= 25ºC
I
SD
I
S, pulse
dv/dt
di
f
/dt
4.6
18
15
500
Copyright D3 Semiconductor 2017 – All Rights Reserved
3
®
D3S650N65x
2. Thermal Characteristics
Table 3
Thermal Characteristics
Symbol
R
th-jC
R
th-jA
T
S
Parameter
Thermal resistance, junction-
case
Thermal resistance, junction-
ambient
Soldering temperature, wave
soldering only allowed at
leads
Values
TO-220
4.1
65
260
TO-220FP
10
65
260
TO-263
4.1
65
260
TO-247
TBD
TBD
TBD
Unit
ºC
/
W
ºC
/
W
ºC
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4
®
D3S650N65x
3. Electrical Characteristics
@ T
j
= 25
º
C, unless otherwise specified
Table 4
Static Characteristics
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance***
Symbol
V
(BR)DSS
V
GS(TH)
I
DSS
Values
Min Typ Max
650
2.3
3
3.7
1
Unit
V
V
µA
Condition
I
D
= 1mA, V
GS
= 0V
V
DS
= V
GS,
I
D
= 31uA
V
DS
= 650V, T
C
= 25ºC,
V
GS
= 0V
V
DS
= 650V, T
C
= 125ºC,
V
GS
= 0V
V
GS
=
±30V,
V
DS
= 0V
V
GS
= 10V, I
D
= 2.3A,
T
J
= 25ºC
V
GS
= 10V, I
D
= 2.3A,
T
J
= 150ºC
50
I
GSS
0.60
R
DS(on)
1.46
R
G
1
Ω
Ω
100
0.65
nA
Ω
Table 5
Dynamic Characteristics
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Values
Min Typ Max
454
15.3
4.3
6
9
12
10
Unit
pF
pF
pF
ns
Ns
Ns
Ns
Condition
V
DS
= 100V, f = 1MHz,
V
GS
= 0V
V
DD
= 400V, I
D
= 2.3A
R
G
= 1Ω, V
GS
= 10V
Table 6
Gate Charge Characteristics
Parameter
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Symbol
Q
gs
Q
gd
Q
g
V
plateau
Values
Min Typ
Max
1.6
2.9
7.8
5
Unit
nC
nC
nC
V
Condition
V
DD
= 480V, I
D
= 2.3A,
V
GS
= 0 to 10V
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