VS-8CSH02HM3
www.vishay.com
Vishay Semiconductors
Hyper Fast Rectifier, 2 x 4 A FRED Pt
®
FEATURES
• Hyper fast recovery time, reduced Q
rr
, and soft
recovery
K
K
Anode 1
Anode 2
• 175 °C maximum operating junction temperature
• Specified for output and snubber operation
• Low forward voltage drop
1
2
SMPC (TO-277A)
Cathode
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr (typ.)
T
J
max.
Diode variation
SMPC (TO-277A)
2x4A
200 V
0.72 V
25 ns
175 °C
Dual
DESCRIPTION / APPLICATIONS
State of the art hyper fast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyper fast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in snubber, boost,
lighting, piezo-injection, as high frequency rectifiers, and
freewheeling diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
per device
per diode
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
Sp
= 160 °C
T
J
= 25 °C
TEST CONDITIONS
VALUES
200
8
4
130
70
-55 to +175
°C
A
UNITS
V
Non-repetitive peak surge current
Operating junction and storage temperatures
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage, per diode
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
TEST CONDITIONS
I
R
= 100 μA
I
F
= 4 A
I
F
= 4 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 200 V
MIN.
200
-
-
-
-
-
TYP.
-
0.89
0.72
-
6
17
MAX.
-
0.95
0.78
2
80
-
μA
pF
V
UNITS
Reverse leakage current, per diode
Junction capacitance
Revision: 12-May-17
Document Number: 94989
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8CSH02HM3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 4 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
MIN.
-
-
-
-
-
-
-
-
TYP.
25
-
18
27
2
3.6
18
50
MAX.
-
25
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Thermal resistance, junction
to solder pad, per leg
Thermal resistance, junction
to ambient, per leg
Approximate weight
Marking device
Case style SMPC (TO-277A)
SYMBOL
T
J
, T
Stg
R
thJ-Sp
R
thJA
TEST CONDITIONS
MIN.
-55
-
-
TYP.
-
2.5
80
0.1
0.0035
QCH2
MAX.
175
3.5
-
UNITS
°C
°C/W
°C/W
g
oz.
I
F
- Instantaneous Forward Current (A)
100
100
175 °C
I
R
- Reverse Current (μA)
10
1
150 °C
10
T
J
= 175 °C
125 °C
0.1
0.01
0.001
0.0001
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
25 °C
0
50
100
150
200
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 12-May-17
Document Number: 94989
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8CSH02HM3
www.vishay.com
100
5
RMS limit
Vishay Semiconductors
C
T
- Junction Capacitance (pF)
Average Power Loss (W)
4
3
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
2
1
10
0
50
100
150
200
0
0
1
2
3
4
5
6
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Forward Power Loss Characteristics
180
35
30
25
Allowable Case Temperature (°C)
175
170
DC
125 °C
t
rr
(ns)
Square
wave (D = 0.50)
80 % rated V
R
applied
20
15
25 °C
10
I
F
= 4 A
5
165
160
See
note
155
0
1
2
3
4
5
(1)
100
1000
I
F(AV)
- Average Forward Current (A)
Fig. 4 - Maximum Allowable Case Temperature
vs. Average Forward Current
80
dI
F
/dt (A/μs)
Fig. 6 - Typical Reverse Recovery Time vs. dI
F
/dt
60
125 °C
Q
rr
(nC)
40
25 °C
20
I
F
= 4 A
0
100
1000
dI
F
/dt (A/μs)
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 5);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
Revision: 12-May-17
Document Number: 94989
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8CSH02HM3
www.vishay.com
Vishay Semiconductors
10
Z
thJC
- Thermal Impedance (°C/W)
Typical, junction to case
Steady state
value
1
0.1
Single
pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t
1
- Rectangular Pulse Duration (s)
Fig. 8 - Typical Transient Thermal Impedance, Junction to Case
100
Z
thJA
- Thermal Impedance (°C/W)
Typical, junction to ambient
10
Steady state
value
1
Single
pulse
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t
1
- Rectangular Pulse Duration (s)
Fig. 9 - Typical Transient Thermal Impedance, Junction to Ambient
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 12-May-17
Document Number: 94989
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8CSH02HM3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
5
6
7
8
-
-
-
8
2
C
3
S
4
H
5
02
6
H
7
M3
8
Vishay Semiconductors product
Current rating (8 = 8 A)
Circuit configuration:
C = common cathode
-
-
-
-
-
S = SMPC package
Process type,
H = hyper fast recovery
Voltage code (02 = 200 V)
H = AEC-Q101 qualified
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-8CSH02HM3/86A
VS-8CSH02HM3/87A
QUANTITY PER REEL
1500
6500
MINIMUM ORDER QUANTITY
1500
6500
PACKAGING DESCRIPTION
7" diameter plastic tape and reel
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?95570
www.vishay.com/doc?95565
www.vishay.com/doc?88869
www.vishay.com/doc?96095
Revision: 12-May-17
Document Number: 94989
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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