RAQ045P01
Pch -12V -4.5A Small Signal MOSFET
Datasheet
l
Outline
V
DSS
R
DS(on)
(Max.)
I
D
P
D
-12V
30mΩ
±4.5A
1.25W
SOT-457T
TSMT6
l
Features
1) Low on - resistance.
2) -1.5V Drive.
3) Built-in G-S Protection Diode.
4) Small Surface Mount Package (TSMT6).
5) Pb-free laed plating ; RoHS compliant
ec
N
ew om
m
D
es en
ig de
ns d
f
l
Inner circuit
l
Packaging specifications
Packing
l
Application
Type
Switching
Reel size (mm)
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
l
Absolute maximum ratings
(T
a
= 25°C ,unless otherwise specified)
R
Parameter
Symbol
V
DSS
I
D
I
DP*1
V
GSS
P
D*2
P
D*3
T
j
T
stg
ot
Drain - Source voltage
N
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Operating junction and storage temperature range
-55 to +150
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© 2016 ROHM Co., Ltd. All rights reserved.
1/11
or
Embossed
Tape
180
8
3000
TR
SC
Unit
V
A
A
V
W
W
℃
℃
Value
-12
±4.5
±18
0
½
-8
1.25
0.95
150
20160630 - Rev.001
RAQ045P01
l
Thermal resistance
Datasheet
Parameter
Symbol
R
thJA*2
R
thJA*3
Values
Min.
-
-
Typ.
-
-
Max.
100
132
Unit
℃
/W
℃
/W
Thermal resistance, junction - ambient
l
Electrical characteristics (T
a
= 25°C)
Parameter
ec
N
ew om
m
D
es en
ig de
ns d
f
Symbol
Conditions
Min.
-12
-
-
-
Typ.
-
V
(BR)DSS
V
GS
= 0V, I
D
= -1mA
Δ
V
(BR)DSS
I
D
= -1mA
ΔT
j
referenced to 25
℃
or
Values
Max.
-
-
-10
-10
-1.0
-
30
39
57
100
48
-
-
Ω
S
mΩ
Unit
V
mV/
℃
μA
μA
V
mV/
℃
-5
-
-
-
V
DS
= -12V, V
GS
= 0V
V
GS
= -8V, V
DS
= 0V
V
DS
= -6V, I
D
= -1mA
-0.3
-
-
-
-
-
-
-
2.7
22
28
38
50
34
20
-
V
GS
= -4.5V, I
D
= -4.5A
V
GS
= -2.5V, I
D
= -2.2A
V
GS
= -1.8V, I
D
= -2.2A
V
GS
= -1.5V, I
D
= -0.9A
V
GS
= -4.5V, I
D
= -4.5A
T
j
= 125
℃
f = 1MHz, open drain
V
DS
= -6V, I
D
= -4.5A
5.5
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
I
DSS
I
GSS
Gate - Source leakage current
Gate threshold voltage
V
GS(th)
Gate threshold voltage
temperature coefficient
Δ
V
GS(th)
I
D
= -1mA
ΔT
j
referenced to 25
℃
ot
Gate resistance
*4 Pulsed
R
Static drain - source
on - state resistance
R
DS(on)*4
R
G
N
Forward Transfer
Admittance
*1 Pw
≦
10μs , Duty cycle
≦
1%
|Y
fs
|
*4
*2 Mounted on a ceramic board (30×30×0.8mm)
*3 Mounted on a FR4 (25×25×0.8mm,Cu pad:625mm
2
)
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© 2016 ROHM Co., Ltd. All rights reserved.
2/10
20160630 - Rev.001
RAQ045P01
Datasheet
l
Electrical characteristics
(T
a
= 25°C)
Values
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Symbol
C
iss
C
oss
C
rss
t
d(on)*4
t
r*4
Conditions
Min.
V
GS
= 0V
V
DS
= -6V
f = 1MHz
V
DD
⋍
-6V,V
GS
= -4.5V
Unit
Typ.
4200
350
330
16
60
Max.
-
-
-
-
-
ns
-
-
pF
-
-
-
-
-
-
-
Turn - off delay time
Fall time
l
Gate charge characteristics
(T
a
= 25°C)
Parameter
Total gate charge
ec
N
ew om
m
D
es en
ig de
ns d
f
I
D
= -2.2A
R
L
⋍
2.7Ω
R
G
= 10Ω
t
d(off)*4
t
f*4
400
150
Values
Typ.
40
Symbol
Q
g*4
Conditions
Min.
-
-
-
Q
gs*4
Q
gd*4
V
DD
⋍
-6V,
I
D
= -4.5A,
V
GS
= -4.5V
6.5
6.0
Values
Typ.
-
-
-
Symbol
I
S
I
SP*1
V
SD*4
Conditions
Min.
-
-
-
T
a
= 25
℃
V
GS
= 0V, I
S
= -4.5A
3/11
Gate - Source charge
Gate - Drain charge
l
Body diode electrical characteristics
(Source-Drain) (T
a
= 25°C)
R
ot
Parameter
N
Continuous forward current
Pulse forward current
Forward voltage
or
Max.
-
-
-
Max.
-1
-18
-1.2
Unit
nC
Unit
A
A
V
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© 2016 ROHM Co., Ltd. All rights reserved.
20160630 - Rev.001
RAQ045P01
Datasheet
l
Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
N
ot
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© 2016 ROHM Co., Ltd. All rights reserved.
ec
N
ew om
m
D
es en
ig de
ns d
f
4/11
Fig.4 Single Pulse Maximum Power
dissipation
R
or
20160630 - Rev.001
RAQ045P01
Datasheet
l
Electrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs.
Junction Temperature
N
ot
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© 2016 ROHM Co., Ltd. All rights reserved.
ec
N
ew om
m
D
es en
ig de
ns d
f
5/11
Fig.8 Typical Transfer Characteristics
R
or
20160630 - Rev.001
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