MUN5332DW1,
NSBC143EPDXV6,
NSBC143EPDP6
Complementary Bias
Resistor Transistors
R1 = 4.7 kW, R2 = 4.7 kW
NPN and PNP Transistors with Monolithic
Bias Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
(3)
R
1
Q
1
Q
2
R
2
(4)
(5)
R
1
(6)
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PIN CONNECTIONS
(2)
R
2
(1)
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable*
•
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C both polarities Q
1
(PNP) & Q
2
(NPN), unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
−
Continuous
Input Forward Voltage
Input Reverse Voltage
Symbol
V
CBO
V
CEO
I
C
V
IN(fwd)
V
IN(rev)
Max
50
50
100
30
10
Unit
Vdc
Vdc
mAdc
Vdc
Vdc
MARKING DIAGRAMS
6
SOT−363
CASE 419B
1
32 MG
G
SOT−563
CASE 463A
32 MG
1
SOT−963
CASE 527AD
M
V
1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
32/V
M
G
= Specific Device Code
= Date Code*
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
MUN5332DW1T1G,
NSVMUN5332DW1T1G*
NSVMUN5332DW1T3G*
NSBC143EPDXV6T1G
NSBC143EPDP6T5G
Package
SOT−363
SOT−363
SOT−563
SOT−963
Shipping
†
3,000/Tape & Reel
10,000/Tape & Reel
4,000/Tape & Reel
8,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
45
Publication Order Number:
DTC143EP/D
©
Semiconductor Components Industries, LLC, 2013
June, 2017
−
Rev. 2
MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6
THERMAL CHARACTERISTICS
Characteristic
MUN5332DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation
(Note 31)
T
A
= 25°C
(Note 32)
Derate above 25°C
(Note 31)
(Note 32)
Thermal Resistance,
Junction to Ambient
(Note 31)
(Note 32)
P
D
187
256
1.5
2.0
670
490
mW
mW/°C
°C/W
Symbol
Max
Unit
R
qJA
MUN5332DW1 (SOT−363) BOTH JUNCTION HEATED
(Note 33)
Total Device Dissipation
(Note 31)
T
A
= 25°C
(Note 32)
Derate above 25°C
(Note 31)
(Note 32)
Thermal Resistance,
Junction to Ambient
(Note 32)
Thermal Resistance,
Junction to Lead (Note 31)
(Note 32)
Junction and Storage Temperature Range
NSBC143EPDXV6 (SOT−563) ONE JUNCTION HEATED
Total Device Dissipation
(Note 31)
T
A
= 25°C
Derate above 25°C
(Note 31)
Thermal Resistance,
Junction to Ambient
(Note 31)
P
D
357
2.9
350
mW
mW/°C
°C/W
(Note 31)
P
D
250
385
2.0
3.0
493
325
188
208
−55
to +150
mW
mW/°C
°C/W
R
qJA
R
qJL
°C/W
T
J
, T
stg
°C
R
qJA
NSBC143EPDXV6 (SOT−563) BOTH JUNCTION HEATED
(Note 33)
Total Device Dissipation
(Note 31)
T
A
= 25°C
Derate above 25°C
(Note 31)
Thermal Resistance,
Junction to Ambient
(Note 31)
P
D
500
4.0
250
−55
to +150
mW
mW/°C
°C/W
°C
R
qJA
T
J
, T
stg
P
D
Junction and Storage Temperature Range
NSBC143EPDP6 (SOT−963) ONE JUNCTION HEATED
Total Device Dissipation
(Note 34)
T
A
= 25°C
(Note 35)
Derate above 25°C
(Note 34)
(Note 35)
Thermal Resistance,
Junction to Ambient
(Note 35)
(Note 34)
231
269
1.9
2.2
540
464
MW
mW/°C
°C/W
R
qJA
NSBC143EPDP6 (SOT−963) BOTH JUNCTION HEATED
(Note 33)
Total Device Dissipation
(Note 34)
T
A
= 25°C
(Note 35)
Derate above 25°C
(Note 34)
(Note 35)
Thermal Resistance,
Junction to Ambient
(Note 35)
(Note 34)
P
D
339
408
2.7
3.3
369
306
−55
to +150
MW
mW/°C
°C/W
R
qJA
Junction and Storage Temperature Range
31. FR−4 @ Minimum Pad.
32. FR−4 @ 1.0
×
1.0 Inch Pad.
33. Both junction heated values assume total power is sum of two equally powered channels.
34. FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
35. FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
T
J
, T
stg
°C
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46
MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C both polarities Q
1
(PNP) & Q
2
(NPN), unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
Collector-Base Breakdown Voltage
(I
C
= 10
mA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (Note 36)
(I
C
= 2.0 mA, I
B
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 36)
(I
C
= 5.0 mA, V
CE
= 10 V)
Collector-Emitter Saturation Voltage (Note 36)
(I
C
= 10 mA, I
B
= 1.0 mA)
Input Voltage (Off)
(V
CE
= 5.0 V, I
C
= 100
mA)
(NPN)
(V
CE
= 5.0 V, I
C
= 100
mA)
(PNP)
Input Voltage (On)
(V
CE
= 0.2 V, I
C
= 20 mA) (NPN)
(V
CE
= 0.2 V, I
C
= 20 mA) (PNP)
Output Voltage (On)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
Output Voltage (Off)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kW)
Input Resistor
Resistor Ratio
36. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle
≤
2%.
h
FE
V
CE(sat)
V
i(off)
15
−
−
−
−
−
−
4.9
3.3
0.8
30
−
1.2
1.2
2.4
2.8
−
−
4.7
1.0
−
0.25
−
−
−
−
0.2
−
6.1
1.2
V
Vdc
I
CBO
I
CEO
I
EBO
V
(BR)CBO
V
(BR)CEO
−
−
−
50
50
−
−
−
−
−
100
500
1.5
−
−
nAdc
nAdc
mAdc
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
V
i(on)
Vdc
V
OL
V
OH
R1
R
1
/R
2
Vdc
Vdc
kW
400
P
D
, POWER DISSIPATION (mW)
350
300
250
200
150
100
50
0
−50
−25
0
25
50
75
100
125
150
(1) (2) (3)
(1) SOT−363; 1.0
×
1.0 Inch Pad
(2) SOT−563; Minimum Pad
(3) SOT−963; 100 mm
2
, 1 oz. Copper Trace
AMBIENT TEMPERATURE (°C)
Figure 77. Derating Curve
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47
MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6
TYPICAL CHARACTERISTICS
−
NPN TRANSISTOR
MUN5332DW1, NSBC143EPDXV6
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
1
I
C
/I
B
= 10
h
FE
, DC CURRENT GAIN
100
1000
V
CE
= 10 V
25°C
150°C
−55°C
0.1
150°C
25°C
−55°C
10
1
0.01
0
10
20
30
40
50
0.1
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 78. V
CE(sat)
, vs. I
C
3.6
C
ob
, OUTPUT CAPACITANCE (pF)
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
10
20
30
40
50
100
I
C
, COLLECTOR CURRENT (mA)
Figure 79. DC Current Gain
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
150°C
10
25°C
−55°C
1
0.1
V
O
= 5 V
0.01
0
1
2
3
4
5
V
R
, REVERSE VOLTAGE (V)
V
in
, INPUT VOLTAGE (V)
Figure 80. Output Capacitance
100
Figure 81. Output Current vs. Input Voltage
V
in
, INPUT VOLTAGE (V)
10
−55°C
1
150°C
25°C
V
O
= 0.2 V
0.1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 82. Input Voltage vs. Output Current
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48
MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6
TYPICAL CHARACTERISTICS
−
PNP TRANSISTOR
MUN5332DW1, NSBC143EPDXV6
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
1
1000
V
CE
= 10 V
75°C
0.1
−25°C
25°C
h
FE
, DC CURRENT GAIN
75°C
I
C
/I
B
= 10
100
25°C
10
T
A
=
−25°C
0.01
0.001
0
20
40
30
10
I
C
, COLLECTOR CURRENT (mA)
50
1
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 83. V
CE(sat)
vs. I
C
10
C
ob
, OUTPUT CAPACITANCE (pF)
8
7
6
5
4
3
2
1
0
0
10
20
30
40
V
R
, REVERSE VOLTAGE (V)
50
I
C
, COLLECTOR CURRENT (mA)
9
f = 10 kHz
l
E
= 0 A
T
A
= 25°C
100
10
Figure 84. DC Current Gain
75°C
25°C
1
0.1
0.01
V
O
= 5 V
0
1
2
7
3
4
5
6
V
in
, INPUT VOLTAGE (V)
8
9
10
T
A
=
−25°C
0.001
Figure 85. Output Capacitance
10
Figure 86. Output Current vs. Input Voltage
V
in
, INPUT VOLTAGE (V)
T
A
=
−25°C
1
75°C
25°C
V
O
= 0.2 V
0.1
0
40
10
20
30
I
C
, COLLECTOR CURRENT (mA)
50
Figure 87. Input Voltage vs. Output Current
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49
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