SE10FD, SE10FG, SE10FJ
www.vishay.com
Vishay General Semiconductor
Surface-Mount Standard Rectifiers
FEATURES
TMBS
®
eSMP
®
Series
• Low profile package
• Ideal for automated placement
• Oxide planar chip junction
• Low forward voltage drop, low leakage current
• ESD capability
• Meets MSL level 1, per
LF maximum peak of 260 °C
• Wave and reflow solderable
J-STD-020,
Available
Top view
Bottom view
SMF
(DO-219AB)
Cathode
Anode
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization:
for
definitions
of
compliance
www.vishay.com/doc?99912
please
see
DESIGN SUPPORT TOOLS
Models
Available
click logo to get started
TYPICAL APPLICATIONS
General purpose, power line polarity protection, in
commercial, industrial, and automotive applications.
1.0 A
200 V, 400 V, 600 V
25 A
0.85 V
5 μA
175 °C
SMF (DO-219AB)
Single
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 1.0 A (T
A
= 125 °C)
I
R
T
J
max.
Package
Circuit configuration
MECHANICAL DATA
Case:
SMF (DO-219AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - for halogen-free, RoHS-compliant
Base P/NHM3 - for halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity:
color band denotes the cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
Operating junction and storage temperature range
Notes
(1)
Free air, mounted on recommended PCB, 2 oz. pad area
V
RRM
I
F(AV) (1)
I
FSM
T
J
, T
STG
SYMBOL
SE10FD
AD
200
SE10FG
AG
400
1.0
25
-55 to +175
SE10FJ
AJ
600
V
A
A
°C
UNIT
Revision: 06-Jun-2018
Document Number: 87722
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SE10FD, SE10FG, SE10FJ
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
I
F
= 0.5 A
Instantaneous forward voltage
I
F
= 1.0 A
I
F
= 0.5 A
I
F
= 1.0 A
Reverse current
Typical reverse recovery time
Typical junction capacitance
Rated V
R
T
A
= 25 °C
V
F (1)
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
I
R (2)
t
rr
C
J
SYMBOL
TYP.
0.90
0.95
0.78
0.85
-
6.8
780
7.5
MAX.
-
1.05
-
0.95
5
50
-
-
μA
ns
pF
V
UNIT
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
4.0 V, 1 MHz
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
THERMAL CHARACTERISTICS
(T
A
= 25 °c unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
JA
(1)
R
JM
(1)
SE10FD
SE10FG
130
20
SE10FJ
UNIT
°C/W
Notes
(1)
Free air, mounted on recommended PCB, 2 oz. pad area; thermal resistance R
JA
- junction to ambient; R
JM
- junction to mount
IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS
(T
A
= 25 °C unless otherwise noted)
STANDARD
AEC-Q101-001
TEST TYPE
Human body model (contact mode)
TEST CONDITIONS
C = 100 pF, R = 1.5 k
SYMBOL
V
C
CLASS
H3B
VALUE
> 8 kV
ORDERING INFORMATION
(Example)
PREFERRED P/N
SE10FJ-M3/H
SE10FJ-M3/I
SE10FJHM3/H
(1)
SE10FJHM3/I
(1)
Note
(1)
AEC-Q101 qualified
UNIT WEIGHT (g)
0.015
0.015
0.015
0.015
PREFERRED PACKAGE CODE
H
I
H
I
BASE QUANTITY
3000
10 000
3000
10 000
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Revision: 06-Jun-2018
Document Number: 87722
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SE10FD, SE10FG, SE10FJ
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Average Forward Rectified Current (A)
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
T
M
=measured on free air,
mounted on recommended PCB
100
T
A
= 175 °C
T
A
= 150 °C
10
T
A
= 125 °C
T
A
= 100 °C
1
Instantaneous Reverse Current (μA)
0.1
T
A
= 25 °C
0.01
10
20
30
40
50
60
70
80
90
100
Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
0.9
0.8
D = 0.8
D = 0.5
100
T
J
= 25 C
f = 1.0 MHz
V
sig
= 50 mV
p-p
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
0.2 0.4 0.6 0.8
1
D = 0.1
D = 0.2
D = 0.3
D = 1.0
Junction Capacitance (pF)
Average Power Loss (W)
10
T
D = t
p
/T
t
p
1
1.2 1.4 1.6 1.8
2
2.2
0.1
1
10
100
Average Forward Current (A)
Fig. 2 - Average Power Loss Characteristics
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Instantaneous Forward Current (A)
10
Transient Thermal Impedance (°C/W)
Junction to Ambient
T
A
= 175 °C
T
A
= 150 °C
T
A
= 125 °C
1
T
A
= 100 °C
T
A
= 25 °C
100
10
0.1
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
1
0.01
0.1
1
10
100
1000
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 06-Jun-2018
Document Number: 87722
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SE10FD, SE10FG, SE10FJ
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in millimeters (inches)
0.85 (0.033)
0.35 (0.014)
Vishay General Semiconductor
0.25 (0.010)
0.1 (0.003)
0.1 (0.004)
5
1.9 (0.075)
1.7 (0.067)
1.2 (0.047)
0.8 (0.031)
0 (0.000)
Detail Z
enlarged
1.08 (0.043)
2.9 (0.114)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
0.88 (0.035)
Foot print recommendation:
1.3 (0.051)
1.3 (0.051)
Created - Date: 15. February 2005
Rev. 3 - Date: 13. March 2007
Document no.:S8-V-3915.01-001 (4)
17247
1.4 (0.055)
2.9 (0.114)
Revision: 06-Jun-2018
Document Number: 87722
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
5
SE10FD, SE10FG, SE10FJ
www.vishay.com
BLISTERTAPE DIMENSIONS
in millimeters:
SMF (DO-219AB)
Vishay General Semiconductor
PS
Document-No.: S8-V-3717.02-001 (3)
18513
Revision: 06-Jun-2018
Document Number: 87722
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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