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VS-MBRA140-M3/5AT

产品描述肖特基二极管与整流器 Schottky - SMA-e3
产品类别分立半导体    二极管   
文件大小102KB,共6页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
下载文档 详细参数 全文预览

VS-MBRA140-M3/5AT概述

肖特基二极管与整流器 Schottky - SMA-e3

VS-MBRA140-M3/5AT规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Vishay(威世)
包装说明HALOGEN FREE AND ROHS COMPLIANT, SIMILAR TO D-64, SMA, 2 PIN
Reach Compliance Codenot_compliant
ECCN代码EAR99
Factory Lead Time12 weeks
其他特性FREE WHEELING DIODE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JEDEC-95代码DO-214AC
JESD-30 代码R-PDSO-C2
JESD-609代码e3
湿度敏感等级1
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
最大重复峰值反向电压40 V
表面贴装YES
技术SCHOTTKY
端子面层Tin (Sn)
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED

文档预览

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VS-MBRA140-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 1 A
FEATURES
• Low forward voltage drop
Cathode
Anode
• Guard ring for enhanced ruggedness and long
term reliability
• Small foot print, surface mountable
• High frequency operation
DO-214AC (SMA)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DO-214AC (SMA)
1A
40 V
0.49 V
26 mA at 125 °C
150 °C
Single die
3.0 mJ
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
Diode variation
E
AS
DESCRIPTION
The VS-MBRA140-M3 surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
1.5 A
pk
, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
1
40
120
0.56
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-MBRA140-M3
40
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
50 % duty cycle at T
L
= 123 °C, rectangular waveform
On PC board 9 mm
2
island
(0.013 mm thick copper pad area)
50 % duty cycle at T
L
= 132 °C, rectangular waveform
On PC board 9 mm
2
island
(0.013 mm thick copper pad area)
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1 A, L = 6 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated
load condition and with
rated V
RRM
applied
VALUES
1.5
A
1
120
A
30
3.0
1.0
mJ
A
UNITS
Maximum average forward current
See fig. 4
I
F(AV)
Maximum peak one cycle
non-repetitive surge current
See fig. 6
Non-repetitive avalanche energy
Repetitive avalanche current
Revision: 10-Jun-16
Document Number: 95883
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

 
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