Released
GRF2105
Enhanced Gain Flatness LNA
0.4 to 5.0 GHz
Product Description
GRF2105 is a broadband, ultra-low noise linear amplifier
designed for small cell, wireless infrastructure and other
high performance RF applications. The standard tune
exhibits outstanding NF and linearity, return losses and
enhanced gain flatness over 0.4 to 3.8 GHz.
Features
Reference: 5V/70mA/2.5 GHz
•
•
Gain: 20.5 dB
Eval Board NF: 0.77 dB
Refer to the GRF2105 website landing page for a grow-
ing selection of application notes addressing specific
application requirements such as improved return loss,
operation to 5.0 GHz, etc.
Configured as a first stage LNA, linear driver or cascaded
gain block, GRF2105 offers high levels of reuse both
within a design and across platforms. The device is oper-
ated from a supply voltage (Vdd) range of 2.7 to 6.0 V
with a typical bias condition of 5 volts and 70 mA for op-
timal efficiency and linearity.
The device is housed in a 1.5 x 1.5 x 0.5 mm 6-pin plas-
tic DFN package. Consult with the GRF applications engi-
neering team for custom tuning/evaluation board data
and device s-parameters.
•
•
•
•
•
OP1dB: 22.5 dBm
OIP3: 37.0 dBm
Flexible bias voltage and Current
Minimal External Components
Process: GaAs pHEMT
Applications
•
•
•
•
•
•
•
Broadband LNA
Linear Driver Amplifier
Small Cells and Cellular Repeaters
Wireless Backhaul
C-Band Amplifier to 5.0 GHz
3.5 GHz CBRS
TDD-LTE
Guerrilla RF Proprietary Information. Guerrilla RF
TM
and the composite logo of Guerrilla RF
TM
are trademarks of Guerrilla RF, Inc. ©2014 Guerrilla RF, Inc. All rights reserved.
Revision Date: 04/09/18
Please contact Guerrilla RF at (+1) 336-510-7840 or
sales@guerrilla-rf.com
1
Released
GRF2105
Enhanced Gain Flatness LNA
0.4 to 5.0 GHz
Absolute Ratings:
Parameter
Supply Voltage
RF Input Power: (Load VSWR < 2:1; V
D
: 5.0 volts)
Operating Temperature (Package Heat Sink)
Maximum Channel Temperature
(MTTF > 10^6 Hours)
Maximum Dissipated Power
Electrostatic Discharge:
Charged Device Model:
Human Body Model:
Storage:
CDM
HBM
1500
250
V
V
Symbol
V
DD
P
IN MAX
T
AMB
T
MAX
P
DISS MAX
Min.
0
Max.
6.0
20
Unit
V
dBm
°C
°C
W
-40
105
170
0.6
Storage Temperature
Moisture Sensitivity Level
T
STG
MSL
-65
150
1
°C
--
Caution!
ESD Sensitive Device
Exceeding Absolute Maximum Rating conditions may cause permanent damage to the device.
Note: For package dimensions and manufacturing information, see the Guerrilla-RF.com website
for the following document located on the GRF2105 landing page: Manufacturing Note—MN-
001 Product Tape and Reel, Solderability and Package Outline Specification:
Link to manufacturing note:
Guerrilla RF Proprietary Information. Guerrilla RF
TM
and the composite logo of Guerrilla RF
TM
are trademarks of Guerrilla RF, Inc. ©2014 Guerrilla RF, Inc. All rights reserved.
Revision Date: 04/09/18
Please contact Guerrilla RF at (+1) 336-510-7840 or
sales@guerrilla-rf.com
2
Released
GRF2105
Enhanced Gain Flatness LNA
0.4 to 5.0 GHz
Pin Out (Top View)
Pin Assignments:
Pin
1
2
3
4
5
6
PKG
BASE
Name
V
ENABLE
NC
RF_In
RF_Out
NC
NC
GND
Description
Enable Voltage Input
No Connect or Ground
LNA RF input
LNA RF output
No Connect or Ground
No Connect or Ground
Ground
Note
V
ENABLE
and series resistor set I
DDQ
. V
ENABLE
< =0.2 volts disables device. On
-die pull-down resistor will turn the part off if this node is allowed to float.
No internal connection to die
Internally matched 50Ω. An external DC blocking cap must be used.
Internally matched 50Ω. V
DD
must be applied through a choke to this pin
No internal connection to die
No internal connection to die
Provides DC and RF ground for LNA, as well as thermal heat sink. Recom-
mend multiple 8 mil vias beneath the package for optimal RF and thermal
performance. Refer to evaluation board top layer graphic on schematic
page.
Guerrilla RF Proprietary Information. Guerrilla RF
TM
and the composite logo of Guerrilla RF
TM
are trademarks of Guerrilla RF, Inc. ©2014 Guerrilla RF, Inc. All rights reserved.
Revision Date: 04/09/18
Please contact Guerrilla RF at (+1) 336-510-7840 or
sales@guerrilla-rf.com
3
Released
Nominal Operating Parameters:
Parameter
Test Frequency
Gain
Evaluation Board Noise Figure
Output 1dB Compression Power
Output 3rd Order Intercept
Switching Rise Time
Switching Fall Time
Supply Current
GRF2105
Enhanced Gain Flatness LNA
0.4 to 5.0 GHz
Symbol
F
TEST
S21
NF
OP1dB
OIP3
T
RISE
T
FALL
I
DD
Specification
Min.
19.5
Typ.
2.5
20.5
0.77
Max.
Unit
GHz
dB
dB
dBm
dBm
ns
ns
mA
Condition
V
DD
= 5.0 V, T
A
= 25°C
20.5
22.5
37.0
1200
400
70
2.0 dBm P
OUT
per tone (2499 and
2501 MHz)
Enable Current
Disabled Mode
Leakage Current
Thermal Data
Thermal Resistance: (Infra-Red Scan)
Channel Temperature @ +85 C Reference
(Package heat sink)
I
ENABLE
1.5
mA
I
LEAKAGE
270
55
104
uA
ᵒC/W
ᵒC
V
DD
: 5.0V; V
ENABLE
: 0.0V
On standard Evaluation Board
V
DD
: 5.0 V; I
DDQ
: 70 mA; No RF;
P
DISS
: 350 mW
jc
T
CHANNEL
Guerrilla RF Proprietary Information. Guerrilla RF
TM
and the composite logo of Guerrilla RF
TM
are trademarks of Guerrilla RF, Inc. ©2014 Guerrilla RF, Inc. All rights reserved.
Revision Date: 04/09/18
Please contact Guerrilla RF at (+1) 336-510-7840 or
sales@guerrilla-rf.com
4
Released
GRF2105
Enhanced Gain Flatness LNA
0.4 to 5.0 GHz
GRF2105 Evaluation Board Measured Data: (0.4 to 3.8 GHz Tune)
Guerrilla RF Proprietary Information. Guerrilla RF
TM
and the composite logo of Guerrilla RF
TM
are trademarks of Guerrilla RF, Inc. ©2014 Guerrilla RF, Inc. All rights reserved.
Revision Date: 04/09/18
Please contact Guerrilla RF at (+1) 336-510-7840 or
sales@guerrilla-rf.com
5
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