BZV55B2V4 - BZV55B75
Taiwan Semiconductor
500mW, 2% Tolerance Zener Diodes
FEATURES
● Wide zener voltage range selection: 2.4V to 75V
● V
Z
tolerance selection of ± 2%
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
Z
Test current I
ZT
P
D
VF at I
F
=100mA
T
J
Max.
Package
Configuration
VALUE
2.4-75
5
500
1
175
UNIT
V
mA
mW
V
°C
APPLICATIONS
●
●
●
●
Low voltage stabilizers or voltage references
Adapters
Lighting application
On-board DC/DC converter
Mini-MELF
Single die
MECHANICAL DATA
●
●
●
●
Case: Mini-MELF
Terminal: Matte tin plated leads, solderable per J-STD-002
Polarity: Indicated by cathode band
Weight: 0.03g (approximately)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage @ I
F
=100mA
Power dissipation
Junction temperature range
Storage temperature range
SYMBOL
V
F
P
D
T
J
T
STG
VALUE
1
500
-65 to +175
-65 to +175
UNIT
V
mW
°C
°C
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
SYMBOL
R
ӨJA
TYP
300
UNIT
°C/W
1
Version: F1804
BZV55B2V4 - BZV55B75
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
ZENER VOLTAGE
PART NUMBER
V
Z
@ I
ZT
V
Min.
BZV55B2V4
BZV55B2V7
BZV55B3V0
BZV55B3V3
BZV55B3V6
BZV55B3V9
BZV55B4V3
BZV55B4V7
BZV55B5V1
BZV55B5V6
BZV55B6V2
BZV55B6V8
BZV55B7V5
BZV55B8V2
BZV55B9V1
BZV55B10
BZV55B11
BZV55B12
BZV55B13
BZV55B15
BZV55B16
BZV55B18
BZV55B20
BZV55B22
BZV55B24
BZV55B27
BZV55B30
BZV55B33
BZV55B36
BZV55B39
BZV55B43
BZV55B47
BZV55B51
BZV55B56
BZV55B62
BZV55B68
BZV55B75
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.78
11.76
12.74
14.70
15.68
17.64
19.60
21.56
23.52
26.46
29.40
32.34
35.28
38.22
42.14
46.06
49.98
54.88
60.76
66.64
73.50
Nom.
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
Max.
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.22
12.24
13.26
15.30
16.32
18.36
20.40
22.44
24.48
27.54
30.60
33.66
36.72
39.78
43.86
47.94
52.02
57.12
63.24
69.36
76.50
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
TEST
CURRENT
I
ZT
mA
REGULAR
IMPEDANCE
Z
ZT
@ I
ZT
Ω
Max.
85
85
85
85
85
85
75
60
35
25
10
8
7
7
10
15
20
20
26
30
40
50
55
55
80
80
80
80
80
90
90
110
125
135
150
160
170
Z
ZK
@ I
ZK
Ω
Max.
600
600
600
600
600
600
600
600
550
450
200
150
50
50
50
70
70
90
110
110
170
170
220
220
220
220
220
220
220
500
600
700
700
1000
1000
1000
1000
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
TEST
CURRENT
I
ZK
mA
µA
Max.
50
10
4
2
2
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
3.0
5.0
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
28
32
35
38
42
47
51
56
I
R
@ V
R
V
LEAKAGE CURRENT
2
Version: F1804
BZV55B2V4 - BZV55B75
Taiwan Semiconductor
Notes:
1. The zener voltage (V
Z
) is tested under pulse condition of 30ms.
2. The device numbers listed have a standard tolerance on the nomial zener voltage of ±2%.
3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages
shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative.
4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current
having an RMS value equal to 10% of the DC zener current(I
ZT
or I
ZK
) is superimposed to I
ZT
or I
ZK
.
ORDERING INFORMATION
PART NO.
(Note 1)
BZV55Bxxx L0
BZV55Bxxx L0G
BZV55Bxxx L1
BZV55Bxxx L1G
PACKAGE
MINI MELF
MINI MELF
MINI MELF
MINI MELF
PACKING
10K / 13" Reel
10K / 13" Reel
2.5K / 7" Reel
2.5K / 7" Reel
Notes:
1. "xxx" defines voltage from 2.4V (BZV55B2V4) to 75V (BZV55B75)
3
Version: F1804
BZV55B2V4 - BZV55B75
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig. 1 Power Dissipation VS. Ambient
Temperature
600
1000
Total Capacitance (pF)
f=1MHz
T
A
=25
o
C
V
R
=0
100
V
R
=2V
V
R
=5V
Fig. 2 Total Capacitance
P
D
-Power DIssipation (mW)
500
400
300
200
10
100
V
R
=20V
V
R
=25V
1
0
40
80
120
160
200
0
20
40
V
Z
- Reverse Voltage (V)
60
80
0
Temperature (
o
C)
Fig. 3 Differential Impedance VS. Zener
Voltage
1000
Differential Zener Impedance(Ohm)
1000
Fig. 4 Forward Current VS. Forward Voltage
100
I
Z
=1mA
I
Z
=2mA
I
Z
=5mA
I
Z
=10mA
T
A
=25
o
C
Forward Current (mA)
100
10
10
1
1
0
1
10
V
Z
- Reverse Voltage (V)
100
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
F
- Forward Voltage (mV)
4
Version: F1804
BZV55B2V4 - BZV55B75
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSION
Mini-MELF
DIM.
Unit (mm)
Min
3.30
1.40
0.20
Max
3.70
1.60
0.50
Unit (inch)
Min
0.130
0.055
0.008
Max
0.146
0.063
0.020
C
A
B
C
B
A
SUGGEST PAD LAYOUT
DIM.
A
B
C
D
Unit (mm)
Typ.
1.25
2.00
2.50
5.00
Unit (inch)
Typ.
0.049
0.079
0.098
0.197
5
Version: F1804
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