TBD62786APG/FNG/FWG
TOSHIBA BiCD Integrated Circuit Silicon Monolithic
TBD62786APG, TBD62786AFNG, TBD62786AFWG
8-ch low active source type DMOS transistor array
TBD62786A series are DMOS transistor arrays with 8 circuits. Each output
has an internal clamp diode that clamps the back electromotive force
generated in driving inductive loads. Please be careful about thermal
conditions during use.
TBD62786APG
Features
•
•
•
•
•
•
8 circuits built-in
High output voltage
Large output current
Input voltage (output on)
Input voltage (output off)
Package
: V
OUT
= 50 V (max)
: I
OUT
= -500 mA (max, per 1 ch)
: -30 to -2.8 V
: -1.2 to 0 V
: PG type P-DIP18-300-2.54-001
FNG type SSOP18-P-225-0.65
FWG type P-SOP18-0812-1.27-001
P-DIP18-300-2.54-001
TBD62786AFNG
TBD62786AFWG
Pin connection (top view)
O1
O2
O3
O4
O5
O6
O7
O8 GND
P-SOP18-0812-1.27-001
I1
I2
I3
I4
I5
I6
I7
I8
VCC
Weight
P-DIP18-300-2.54-001 :
1.3 g (typ.)
SSOP18-P-225-0.65 :
0.09 g (typ.)
P-SOP18-0812-1.27-001 : 0.48 g (typ.)
Pin Connection may be omitted partially or simplified for explanatory purposes.
© 2017
Toshiba Electronic Devices & Storage Corporation
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2017-07-05
TBD62786APG/FNG/FWG
Pin description
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Pin name
I1
I2
I3
I4
I5
I6
I7
I8
VCC
GND
O8
O7
O6
O5
O4
O3
O2
O1
Function
Input pin
Input pin
Input pin
Input pin
Input pin
Input pin
Input pin
Input pin
Power supply pin
GND pin
Output pin
Output pin
Output pin
Output pin
Output pin
Output pin
Output pin
Output pin
Basic circuit
VCC
Clamp
circuit
INPUT
OUTPUT
Clamp
diode
Basic circuit may be omitted partially or simplified for explanatory purpose.
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2017-07-05
TBD62786APG/FNG/FWG
Absolute maximum ratings (
T
a
=
25
°C
, V
CC
=
0 V)
Characteristics
Power supply voltage
Output voltage
Output current
(per 1 ch)
Input voltage
Clamp diode reverse voltage
Clamp diode forward current
PG (Note 1)
Power
dissipation
FNG (Note 2)
FWG (Note 3)
Operating temperature
Storage temperature
T
opr
T
stg
P
D
Symbol
V
CC
-V
GND
V
OUT
I
OUT
V
IN
V
R
I
F
Rating
50
-50 to 0.5
-500
−30 to 0.5
50
500
1.47
0.96
1.31
−40 to 85
−55 to 150
°C
°C
W
Unit
V
V
mA
V
V
mA
Note 1: Stand alone. When Ta exceeds 25°C, it is necessary to do the derating with 11.8 mW/°C.
Note 2: On PCB (size: 50 mm × 50 mm × 1.6 mm, Cu area: 40%, single-side glass epoxy)
When Ta exceeds 25°C, it is necessary to do the derating with 7.7 mW/°C.
Note 3: On PCB (size: 75 mm × 114 mm × 1.6 mm, Cu area: 20%, single-side glass epoxy)
When Ta exceeds 25°C, it is necessary to do the derating with 10.48 mW/°C.
Operating ranges (T
a
= −40
to 85°C and V
CC
=
0 V, unless otherwise specified)
Characteristics
Power supply voltage
Output voltage
Symbol
V
CC
-V
GND
V
OUT
t
pw
= 25 ms
8 circuits ON
Ta = 85°C
T
j
= 120°C
t
pw
= 25 ms
8 circuits ON
Ta = 85°C
T
j
= 120°C
t
pw
= 25 ms
8 circuits ON
Ta = 85°C
T
j
= 120°C
V
IN (ON)
V
IN (OFF)
I
F
Condition
I
OUT
= -100 mA
―
One circuit ON, Ta = 25 °C
Min
2.0
-50
0
0
0
0
0
0
0
0
0
-30
-1.2
―
Typ.
―
―
―
―
―
―
―
―
―
―
―
―
―
―
Max
50
0
-400
-390
-170
-400
-320
-140
-400
-370
-160
-2.8
0
400
Unit
V
V
PG (Note 1)
Duty = 10 %
Duty = 50 %
One circuit ON, Ta = 25 °C
Output current
(per 1 ch)
FNG (Note 2)
I
OUT
Duty = 10 %
Duty = 50 %
mA
One circuit ON, Ta = 25 °C
FWG (Note 3)
Duty = 10 %
Duty = 50 %
Input voltage (Output on)
Input voltage (Output off)
Clamp diode forward current
I
OUT
= -100 mA or more, V
DS
= 2.0 V
I
OUT
= -100
μA
or less, V
DS
= 2.0 V
―
V
V
mA
Note 1: Stand alone
Note 2: On PCB (size: 50 mm × 50 mm × 1.6 mm, Cu area: 40%, single-side glass epoxy)
Note 3: On PCB (size: 75 mm × 114 mm × 1.6 mm, Cu area: 20%, single-side glass epoxy)
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2017-07-05
TBD62786APG/FNG/FWG
Electrical characteristics (T
a
=
25°C and V
CC
= 0 V, unless otherwise specified)
Characteristics
Output leakage current
Symbol
I
leak
Test
circuit
1
Condition
V
IN
= 0 V, V
OUT
= V
GND
= -50 V
Ta = 85 °C
I
OUT
= -350 mA, V
IN
= -2.8 V,
V
GND
= -5.0 V
Output voltage
(Output ON-resistance)
V
DS
(R
ON
)
2
I
OUT
= -200 mA, V
IN
= -2.8 V,
V
GND
= -5.0 V
I
OUT
= -100 mA, V
IN
= -2.8 V,
V
GND
= -5.0 V
Input current
Current consumption
(per 1 ch)
Clamp diode leakage current
Clamp diode forward voltage
Turn-on delay
Turn-off delay
I
IN(ON)
I
IN(OFF)
I
CC(ON)
I
CC(OFF)
I
R
V
F
t
ON
t
OFF
3
4
3
4
5
6
7
V
IN
= -2.8 V, V
GND
= -50 V, Output OPEN
V
IN
= 0 V, V
GND
= -50 V, Output OPEN
V
IN
= -2.8 V, V
GND
= -50 V, Output OPEN
V
IN
= 0 V, V
GND
= -50 V, Output OPEN
V
R
= 50 V, T
a
= 85 °C
I
F
= 350 mA
V
OUT
= V
GND
= -50 V
R
L
= 160
Ω
C
L
= 15 pF
Min
―
―
―
―
―
―
―
―
―
―
―
―
Typ.
―
0.56
(1.6)
0.32
(1.6)
0.16
(1.6)
―
―
―
―
―
―
0.2
2.0
Max
1.0
1.14
(3.25)
0.65
(3.25)
0.325
(3.25)
-30
1
5
1
1
2.0
―
―
μs
μA
μA
mA
μA
μA
V
V
(Ω)
Unit
μA
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2017-07-05
TBD62786APG/FNG/FWG
Test circuit
1. I
leak
VCC
2. V
DS
(R
ON
)
VCC
V
IN
V
GND
INPUT
OUTPUT
V
OUT
V
IN
V
GND
INPUT
OUTPUT
V
DS
V
OUT
I
OUT
I
leak
GND
GND
R
ON
= V
DS
/ I
OUT
3. I
IN(ON)
, I
CC(ON)
I
CC(ON)
VCC
4. I
IN(OFF)
, I
CC(OFF)
I
CC(OFF)
VCC
V
IN
I
lN(ON)
V
GND
INPUT
OUTPUT
V
IN
I
lN(OFF)
V
GND
INPUT
OUTPUT
GND
GND
5. I
R
VCC
6. V
F
VCC
INPUT
OUTPUT
V
R
INPUT
OUTPUT
I
R
GND
GND
I
F
V
F
Test circuits may be omitted partially or simplified for explanatory purpose.
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2017-07-05
嵌入式系统
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